K4A8G045WB-BCPB vs K4A8G045WB 比較
詳細並排比較 K4A8G045WB-BCPB 由 Samsung Electronics 與 K4A8G045WB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G045WB-BCPB | K4A8G045WB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $9.02 | — |
| 記憶體類型 | DDR4 SDRAM (B-die) | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gb |
| 組織 | 2G x 4 | 2G x 4 |
| 資料速率 | 2133 Mbps/pin (PC4-2133) | 2133 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| 封裝 | 78-ball FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Prefetch Architecture | 8n | — |
| Burst Length | BL8, BC4 (burst chop) | — |
| Refresh Cycles | 8192 | 8192 |
| Refresh Modes | Auto-refresh, Self-refresh | — |
| Termination | On-Die Termination (ODT) | — |
| Reset | Asynchronous Reset | — |
| Clocking | Differential clocks (CK/CK#) | Differential clock (CK / CK#) |
| 工作溫度 | 0C to +85C | 0 C to +85 C |
| Max Supply Current | 211.7 mA | 211.7 mA |
| 功能特色 | Posted CAS, Programmable CWL, Internal (Self) Calibration | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 供應電壓 | — | 1.2 V |
| Number of Terminals | — | 78 |
| On-Die Termination | — | Yes (ODT pin) |
| Asynchronous Reset | — | Yes |
| Posted CAS | — | Yes |
| Programmable CWL | — | Yes |
| Internal (Self) Calibration | — | Yes |