K4A8G085WC-BCWE vs H5AN8G8NCJR-VKC 比較
詳細並排比較 K4A8G085WC-BCWE 由 Samsung Electronics 與 H5AN8G8NCJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WC-BCWE | H5AN8G8NCJR-VKC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $7.38 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (volatile) |
| Density | 8 Gb | — |
| 組織 | 1G x 8 | — |
| 資料速率 | 3200 Mbps (DDR4-3200) | 2666 Mbps/pin |
| 供應電壓 | 1.2 V | — |
| 工作溫度 | 0C to +85C | 0C to +85C |
| 封裝 | 78FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (parallel, double data rate) | Parallel (DDR4) |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS 狀態 | Compliant (per JLCPCB listing) | Compliant |
| Refresh | Standard DDR4 refresh mechanisms | — |
| On-Die Termination | Yes (DDR4 ODT) | — |
| 記憶體容量 | — | 8 Gbit |
| Memory Organization | — | 1G x 8 |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (1.2 V class) |
| Operating Current (typ) | — | 30 mA |
| Standby Current (typ) | — | 3 mA |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh period] |