K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung
MPN： K4A8G085WC-BIWE ✓ 啟用中K4A8G085WC-BIWE 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower voltage (1.2V vs 1.5V), and improved reliability. DDR4 is a key component in computing systems, servers, and embedded applications, where it serves as the main system memory or as a buffer for high-speed data processing.
Key features of the K4A8G085WC-BIWE include a density of 8 Gb, an organization of 1G x 8, and a speed grade of 3200 Mbps. The device operates from a 1.2V power supply, with a separate VDDQ of 1.2V, and supports on-die termination (ODT) and programmable read/write latencies. It also features auto-refresh and self-refresh modes for power saving, and a burst length of 8 (BL8) with burst chop (BC4) support. The industrial temperature range (-40°C to +95°C) ensures reliable operation in harsh conditions, such as automotive and industrial control systems.
Technically, the K4A8G085WC-BIWE is built on Samsung's advanced DRAM process technology, offering high cell density and low power consumption. It incorporates a pseudo-open-drain (POD) interface for the data bus, which reduces I/O power. The device supports a 1.2V supply with an on-chip voltage regulator for the core, and it includes a temperature-compensated self-refresh (TCSR) feature to adjust refresh rates based on temperature, enhancing reliability. The 78-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm.
Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The wide temperature range and high speed make it ideal for use in rugged environments where standard commercial-grade memory would fail. It is also used in firmware boot, data logging, and as a buffer in high-speed communication systems.
When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. The DDR4 interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance. Also, follow the JEDEC DDR4 standard for termination and reference voltage (VREF) generation.
直接替換替代品，適用於 K4A8G085WC-BIWE — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4A8G085WC-BIWE （相同外形與佔位） — 差異在於 Package, Data Rate, Operating Temperature, Burst Length, Density.
K4A8G085WB-BIWE
✅ 直接替換聯絡詢價
查看資料表 →K4A8G085WC-BCWE
✅ 直接替換✓ 有庫存
$7.3828 / 單位
查看資料表 →K4A8G085WG-BIWE
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
K4A8G085WC-BCRC
✅ 直接替換聯絡詢價
查看資料表 →MT40A512M16JY-07EAIT:B
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5AN8G6NDJR-XNC
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$55.6818 / 單位
查看資料表 →K4A8G085WC-BIWE 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 8 Gb |
| 組織 | 1G x 8 |
| 資料速率 | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| Supply Voltage (VDDQ) | 1.2 V |
| 工作溫度範圍 | -40°C to +95°C |
| 封裝 | 78-FBGA |
| 安裝類型 | Surface Mount |
| 介面 | POD-12 |
| Burst Length | 8 (BL8), 4 (BC4) |
| CAS 延遲 | 22 (CL22) |
| Refresh | Auto-refresh, self-refresh |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
K4A8G085WC-BIWE 腳位配置
| 腳位 A1 | VDD — Power supply (1.2V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | VSS — Ground |
| 腳位 B1 | VDDQ — I/O power supply (1.2V) |
| 腳位 B2 | DQ1 — Data input/output 1 |
| 腳位 B3 | VSSQ — I/O ground |
| 腳位 C1 | VSS — Ground |
| 腳位 C2 | DQ2 — Data input/output 2 |
| 腳位 C3 | VDD — Power supply (1.2V) |
| 腳位 D1 | DQ3 — Data input/output 3 |
| 腳位 D2 | VSSQ — I/O ground |
| 腳位 D3 | DQ4 — Data input/output 4 |
典型應用
K4A8G085WC-BIWE 適用於 6 應用s: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Medical Monitoring Devices.
Industrial Controllers
The K4A8G085WC-BIWE is ideal for industrial controllers that operate in harsh environments with wide temperature swings. Its -40°C to +95°C range ensures reliable operation in factory floors, outdoor equipment, and automotive systems. The 3200 Mbps data rate provides fast data processing for real-time control loops, while the 1.2V supply reduces power dissipation in compact enclosures. When used as main memory in PLCs or CNC machines, it enables quick access to program data and sensor logs, improving overall system responsiveness.
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Embedded Computing Modules
In embedded computing modules like single-board computers and edge AI devices, the K4A8G085WC-BIWE provides high-bandwidth memory for running operating systems and complex algorithms. Its 8 Gb capacity is sufficient for Linux-based applications, and the 3200 Mbps speed supports fast data transfer between CPU and memory. The industrial temperature range makes it suitable for outdoor kiosks, digital signage, and in-vehicle infotainment. The 78-FBGA package allows for compact module designs, and the low 1.2V supply helps manage thermal budgets in fanless systems.
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Networking Equipment
The K4A8G085WC-BIWE is well-suited for networking equipment such as routers, switches, and firewalls, where high-speed packet processing requires fast memory access. The 3200 Mbps data rate ensures low latency for routing tables and buffering, while the 8 Gb capacity supports large forwarding databases. The industrial temperature range allows deployment in telecom cabinets and outdoor base stations. The 1.2V supply reduces power consumption in always-on network devices, and the FBGA package enables high-density PCB layouts for multi-port designs.
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Data Storage Systems
In data storage systems like SSDs and RAID controllers, the K4A8G085WC-BIWE serves as a cache buffer for fast read/write operations. Its high speed (3200 Mbps) and large capacity (8 Gb) enable efficient caching of frequently accessed data, improving overall storage performance. The industrial temperature range is critical for enterprise storage that operates 24/7 in data centers. The low power consumption of DDR4 helps reduce cooling requirements, and the FBGA package is compatible with standard memory interfaces used in storage controllers.
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Automotive Infotainment
The K4A8G085WC-BIWE is designed for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity features. Its -40°C to +95°C range meets AEC-Q100 Grade 3 requirements, ensuring reliable operation in vehicle cabins. The 3200 Mbps data rate supports smooth video playback and responsive user interfaces, while the 8 Gb capacity can hold map data and application code. The 1.2V supply is compatible with automotive power rails, and the FBGA package withstands vibration and thermal cycling.
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Medical Monitoring Devices
In medical monitoring devices such as patient monitors and diagnostic equipment, the K4A8G085WC-BIWE provides reliable memory for data logging and real-time signal processing. The industrial temperature range ensures operation in clinical environments, and the high speed allows for fast processing of physiological signals. The 8 Gb capacity can store hours of patient data, and the low power consumption is beneficial for battery-powered portable devices. The FBGA package is suitable for compact medical PCBs, and the RoHS compliance meets medical device regulations.
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推薦產品摘要
工程參考資料，適用於 K4A8G085WC-BIWE — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A8G085WB-BIWE | K4A8G085WC-BCWE | MT40A512M16JY-07EAIT |
|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | 0°C to +85°C | -40°C to +95°C |
| Lifecycle | Active | Active | Active | Active |
主要差異化特點
- Industrial temperature range (-40°C to +95°C) (對比K4A8G085WC-BCWE)
- Active lifecycle status (對比K4A8G085WC-BCRC)
- Same-brand drop-in compatibility (對比MT40A512M16JY-07EAIT)
設計說明
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/command groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ ball. Use a solid ground plane beneath the FBGA to minimize noise.
The K4A8G085WC-BIWE operates up to +95°C, but ensure adequate airflow or heatsinking in high-ambient environments. The 78-FBGA package has a theta_JA of approximately 20°C/W. For a typical power dissipation of 1.5W, the junction temperature rise is 30°C, so keep ambient below 65°C to stay within limits.
DDR4 uses a pseudo-open-drain (POD) interface with on-die termination (ODT). Set ODT values according to the system topology to reduce reflections. Use VREF calibration and ensure VREF is generated with low noise. Follow JEDEC JESD79-4 guidelines for termination and routing.
合規資訊
RoHS compliant per LCSC listing. AEC-Q100 not specified; industrial temp range suggests suitability for automotive but not formally qualified.
