K4AAG085WM-BCTD vs K4AAG085WM-BCWE 比較
詳細並排比較 K4AAG085WM-BCTD 由 Samsung Electronics 與 K4AAG085WM-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4AAG085WM-BCTD | K4AAG085WM-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $9.95 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 16 Gb | — |
| 組織 | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 | — |
| 供應電壓 | 1.2 V | 1.2 V |
| 封裝 | FBGA-78 | 78FBGA |
| 工作溫度 | 0C to +85C | 0C to +85C |
| 介面類型 | Parallel (DDR4) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Clock Rate | 1333 MHz | — |
| 資料速率 | 2666 MT/s | 3200 Mbps (DDR4-3200) |
| Bank Group Architecture | DDR4 bank groups | Yes (DDR4) |
| Density Class | 16 Gbit monolithic DRAM | — |
| Application Class | Industrial / embedded memory | Memory IC / Storage Component |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Density | — | 16 Gb |
| 介面 | — | DDR4 (JEDEC-standard) |
| Speed Grade Suffix | — | -BCWE |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |