K4RAH165VB-BIQK vs K4RAH086VB-BIQK 比較

詳細並排比較 K4RAH165VB-BIQK 由 Samsung Electronics 與 K4RAH086VB-BIQK 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K4RAH165VB-BIQK K4RAH165VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH165VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH165VB-BIQK ✓ 啟用中
Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ 啟用中

規格比較

參數 K4RAH165VB-BIQK K4RAH086VB-BIQK
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR5 SDRAM DDR5 SDRAM
Density 16 Gb 16 Gb
組織 1G x 16 2G x 8
資料速率 4800 Mbps (MT/s) 4800 Mbps/pin
Supply Voltage (VDD) 1.1 V —
On-Die ECC Yes —
Auto Self-Refresh Yes —
Asynchronous Reset Yes —
Write Leveling Yes —
CRC Function Yes —
ZQ Calibration Yes —
DLL Enabled Mode Yes (spec mode per datasheet) —
封裝 [DATA_NEEDED: exact package ball count / FBGA designation] 82FBGA
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
品牌 Samsung Semiconductor —
Core Supply Voltage — 1.1 V (nominal)
Configuration — X8
Speed Grade — BIQK (-BIQK bin)
ECC — On-die ECC (DDR5 standard)
介面 — DDR5 (CA reduced pin count)
Burst Length — 16 / 32
Operating Mode — DLL enabled
RoHS 狀態 — Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA)
CAS 延遲 — [DATA_NEEDED: CAS latency (CL)]
Refresh — [DATA_NEEDED: refresh rate specification]
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

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