K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung
MPN： K4RAH086VB-BIQK ✓ 啟用中K4RAH086VB-BIQK 概覽
DDR5 SDRAM is the fifth generation of double-data-rate synchronous dynamic random access memory, the commodity memory technology that sits at the core of servers, workstations, desktops, industrial controllers, and AI computing platforms. Within the memory hierarchy, DRAM provides the main high-bandwidth working memory between the CPU and non-volatile storage such as NAND flash. DDR5 improves on DDR4 with on-die ECC, two independent 32-bit (or 40-bit with ECC) channels per DIMM, a 1.1V core supply, and roughly 30% better power efficiency per bit.
Key features of the K4RAH086VB include 16Gb density in a single-die architecture, 4800 Mbps/pin bandwidth enabling 38.4 GB/s per 64-bit channel, a 1.1V nominal core voltage for reduced power, and on-die ECC (ODTE) for improved data integrity. The BIQK speed bin and industrial-relevant qualification make it suitable for memory module makers and embedded designers alike.
Technically, the device operates in DLL-enabled mode per the Samsung DDR5 device operation datasheet, with bank-group architecture, burst lengths of 16 and 32, and command/address signaling (CA) reduced pin count. The 82FBGA ball map follows the JEDEC-standard x8 DDR5 component footprint used across qualified suppliers.
Typical applications include DDR5 RDIMM/DIMM modules for servers, desktop and workstation memory modules, industrial computing modules, AI accelerator memory subsystems, and replacement sourcing for module repair and BOM fills.
Design consideration: DDR5 requires precision fly-by routing with length matching and VDDQ termination; consult Samsung's DDR5 design guide and module design files for reference layouts.
This page synthesizes distributor stock data, drop-in alternatives across Samsung and SK Hynix, and practical design notes not found in the raw datasheet.
直接替換替代品，適用於 K4RAH086VB-BIQK — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4RAH086VB-BIQK （相同外形與佔位） — 差異在於 Data Rate, Interface, Package, Density, Operating Temperature.
K4RAH086VB-BCQK
✅ 直接替換聯絡詢價
查看資料表 →K4RAH086VB-BCWM
✅ 直接替換聯絡詢價
查看資料表 →K4RAH086VB-BIWM
✅ 直接替換聯絡詢價
查看資料表 →H5CG48MEBDX014N
✅ 直接替換聯絡詢價
查看資料表 →H5CG48AGBDX018N
✅ 直接替換聯絡詢價
查看資料表 →K4RAH086VB-BIQK 最大額定值與電氣特性
| 記憶體類型 | DDR5 SDRAM |
| Density | 16 Gb |
| 組織 | 2G x 8 |
| 資料速率 | 4800 Mbps/pin |
| Core Supply Voltage | 1.1 V (nominal) |
| 封裝 | 82FBGA |
| Configuration | X8 |
| Speed Grade | BIQK (-BIQK bin) |
| ECC | On-die ECC (DDR5 standard) |
| 介面 | DDR5 (CA reduced pin count) |
| Burst Length | 16 / 32 |
| Operating Mode | DLL enabled |
| RoHS 狀態 | Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) |
K4RAH086VB-BIQK 82fbga 腳位配置指南
K4RAH086VB-BIQK（82fbga 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K4RAH086VB-BIQK.
請參閱 資料表 以查看完整腳位配置。
典型應用
K4RAH086VB-BIQK 適用於 6 應用s: DDR5 Server Memory Modules (RDIMM/DIMM), Desktop and Workstation PC Memory, Industrial Controllers and Embedded Computing, AI Accelerator and High-Performance Computing Memory, Module Repair and Replacement Sourcing, Networking and Communication Equipment.
DDR5 Server Memory Modules (RDIMM/DIMM)
The K4RAH086VB-BIQK's 16Gb density and 4800 Mbps/pin data rate make it a core building block for DDR5 server RDIMMs, where modules aggregate sixteen to forty of these x8 components to reach 64GB-256GB per module. The 1.1V core supply lowers per-bit power versus DDR4, reducing the module heat load that datacenter cooling must remove, and on-die ECC improves reliability across large memory populations. In a module, these DRAMs connect to the register clock driver and SPD hub on a fly-by command/address bus; the BIQK speed bin supports DDR5-4800-class platforms. Designers should follow Samsung module design rules for length matching and VDDQ termination.
推薦
Desktop and Workstation PC Memory
Consumer and professional desktop platforms on DDR5-4800-class memory controllers use the K4RAH086VB-BIQK in UDIMM modules, where sixteen x8 components form a 32GB dual-rank module. The 4800 Mbps bin matches the JEDEC default boot speed of first-generation DDR5 platforms, ensuring plug-and-play compatibility without overclocking profiles. The 82FBGA package with lead-free, halogen-free balls meets consumer environmental regulations, and on-die ECC reduces uncorrectable error rates versus DDR4 at the same price point. Module makers should validate BIQK timing against Intel and AMD memory reference specs and program SPD correctly for the speed bin used.
推薦
Industrial Controllers and Embedded Computing
Industrial controllers, edge computing modules, and embedded logging systems adopt DDR5 for its power efficiency and density. The K4RAH086VB-BIQK's 1.1V supply reduces dissipation in sealed enclosures with passive cooling, while on-die ECC protects against soft errors in long-lifetime deployments. GlobalSpec identifies the K4RAH086VB family for industrial controllers, computing modules, and firmware boot/logging storage. Embedded designers typically solder these DRAMs directly on COM Express or SMARC carrier boards; the 82FBGA landing pattern follows JEDEC DDR5 component standards. Verify the operating temperature range for the chosen speed bin and derate data rate at elevated ambient temperature per Samsung's industrial guidance.
推薦
AI Accelerator and High-Performance Computing Memory
AI training and inference cards require large, high-bandwidth working memory, and DDR5 components such as the K4RAH086VB-BIQK provide cost-effective capacity alongside HBM. At 4800 Mbps per pin, a 64-bit DDR5 interface delivers 38.4 GB/s, sufficient for model weight buffering, batch queuing, and host-side dataset staging in AI appliances. The 16Gb single-die density maximizes capacity per PCB area under the 82FBGA footprint, and the htelec.com DDR5 comparison guide explicitly lists this family for AI computing designs. Designers should budget power delivery for simultaneous read/write activity across all bank groups and follow Samsung DDR5 routing guidelines for signal integrity at speed.
推薦
Module Repair and Replacement Sourcing
Independent distributors stock the K4RAH086VB-BIQK for memory module repair, BOM fills, and replacement sourcing on server and workstation platforms. Wolfchip listed 25,395 pcs in stock (Jul 29, 2026) and Octopart Canada aggregated 47,360 pcs (Mar 16, 2026), giving repair shops supply continuity for DDR5-4800 modules. Because Samsung x8 DDR5 components share the JEDEC 82-ball ball map, SK Hynix H5CG48MEBDX014N devices can substitute on the same PCB when Samsung stock runs out. Repair technicians must re-ball with lead-free solder, respect MSL baking requirements, and reprogram SPD data consistent with the installed component's speed bin.
推薦
Networking and Communication Equipment
Routers, switches, and 5G network appliances use DDR5 main memory for packet buffering, route tables, and control-plane software. The K4RAH086VB-BIQK's 16Gb density allows 4GB-8GB memory footprints with few components, simplifying thermal design in 1U chassis, while 4800 Mbps bandwidth supports line-rate packet processing on mid-range platforms. The 1.1V rail improves power budget headroom in always-on network equipment, where the htelec.com comparison guide also positions this DDR5 16Gb class for industrial systems and server appliances. Designers should implement proper fly-by CA routing with per-drop stub tuning and validate refresh behavior under sustained thermal loads typical of telecom racks.
推薦
推薦產品摘要
工程參考資料，適用於 K4RAH086VB-BIQK — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4RAH086VB-BCQK | K4RAH086VB-BIWM | H5CG48MEBDX014N |
|---|---|---|---|---|
| Package | 82FBGA | 82FBGA - same | 82FBGA - same | 82FBGA - same JEDEC ball map |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Data Rate | 4800 Mbps/pin | 4800 Mbps/pin | 5600 Mbps/pin | 4800 Mbps class |
| Core Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| ECC | On-die ECC | On-die ECC | On-die ECC | On-die ECC (DDR5 standard) |
主要差異化特點
- High-speed mainstream bin at lower cost than faster grades (對比K4RAH086VB-BIWM)
- Multi-source substitution within identical footprint (對比H5CG48MEBDX014N)
- Same-die speed-bin flexibility (對比K4RAH086VB-BCQK)
設計說明
DDR5-4800 signals demand strict fly-by routing of the command/address bus with controlled per-drop stub lengths, and length-matched DQ/DQS within spec tolerances (typically a few mils per inch of trace per Samsung module design rules). Use ODT settings from the Samsung DDR5 datasheet and reference Intel/AMD platform memory design guides for board-level termination. For x8 components on DIMMs, keep DQ trace impedance at 40 ohms nominal per module spec and simulate eye diagrams at 4800 Mbps before tape-out.
The K4RAH086VB-BIQK operates from a 1.1V VDD core with separate VDDQ rails per DDR5 standard. Estimated: a fully populated 32GB module with sixteen 16Gb devices can draw several watts at 4800 Mbps under continuous read/write, so size the VDDQ VRM and power-plane copper for peak burst currents plus margin, and place bulk capacitance near each DRAM cluster with 0.1uF decoupling per ball-group as recommended in Samsung DDR5 power delivery guidelines.
The 82FBGA requires an exact JEDEC DDR5 x8 landing pattern; follow Samsung's package outline drawing for pad geometry and solder-mask definition. Handle MSL-controlled BGA inventory correctly - bake per JEDEC J-STD-033 guidance before reflow if floor-life is exceeded, and use lead-free reflow profiles compatible with BGA solder balls. For repair substitution with cross-brand parts such as SK Hynix H5CG48MEBDX014N, the ball map is identical, but reprogram SPD to match the installed component's speed bin.
Do not mix speed bins (BIQK vs BIWM/BCWM) on the same memory channel - the controller trains to the slowest common denominator and mixed-bin modules may fail training or run below rated speed. Also confirm the part is in DLL-enabled mode per the Samsung Rev 1.0 specification, and never exceed the 1.1V +/- tolerance on VDD; DDR5 devices lack the voltage tolerance headroom of DDR3-era DRAM.
合規資訊
Samsung 16Gb DDR5 spec Rev 1.0 states the 82FBGA package is Lead-Free & Halogen-Free (RoHS compliant). REACH, conflict minerals, and AEC-Q100 status not stated in provided data.
