K4RHE086VB-BCWM vs K4RCH046VM-2CCM 比較

詳細並排比較 K4RHE086VB-BCWM 由 Samsung Electronics 與 K4RCH046VM-2CCM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K4RHE086VB-BCWM K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM ✓ 啟用中
Samsung Electronics
K4RCH046VM-2CCM K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM Nrnd

規格比較

參數 K4RHE086VB-BCWM K4RCH046VM-2CCM
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 NRND
記憶體類型 DDR5 SDRAM DDR5 SDRAM
Density 24 Gb 32 Gb
組織 2G x 8 4G x 4
資料速率 5600 Mbps 5600 Mbps
供應電壓 1.1 V 1.1 V
封裝 82 FBGA 78-ball FBGA
安裝類型 Surface Mount Surface Mount
介面 DDR5 (JEDEC) —
Configuration x8 —
Application Segment Server / Data Center / Premium PC —
Manufacturer Samsung Semiconductor —
RoHS 狀態 unknown [DATA_NEEDED: RoHS status]
工作溫度 [DATA_NEEDED: operating temperature range] 0 to 85 C
Access Time / CAS Latency [DATA_NEEDED: CAS latency] —
On-Die ECC [DATA_NEEDED: on-die ECC support] [DATA_NEEDED: on-die ECC support]
Package Height [DATA_NEEDED: package height] —
Product Status — Sample
Access Latency (CL) — [DATA_NEEDED: CAS latency]
Refresh Rate — [DATA_NEEDED: refresh rate]
介面類型 — [DATA_NEEDED: interface type]
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價