LM358DR vs LM358AD 比較

詳細並排比較 LM358DR 由 Texas Instruments 與 LM358AD 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 LM358DR LM358AD
品牌 Texas Instruments STMicroelectronics
類別 Amplifier ICs Amplifier ICs
生命週期狀態 啟用中 啟用中
Amplifier Type General Purpose Operational Amplifier General Purpose, Low Power
Number of Circuits 2 —
Gain Bandwidth Product 700 kHz —
Slew Rate 0.3 V/µs 0.6 V/µs
Supply Voltage (Single) 3 V to 32 V —
Supply Voltage (Dual) ±1.5 V to ±16 V —
Supply Current (per channel) 0.7 mA (typ) —
Input Offset Voltage 2 mV (typ), 7 mV (max) [DATA_NEEDED: input offset voltage]
Common-Mode Input Range Extends to ground (V-) —
Output Current 20 mA (typ, short-circuit protected) —
Minimum Load Resistance 2 kΩ —
工作溫度 0°C to +70°C —
封裝 SOIC-8 (D) 8-pin SOIC
安裝類型 Surface Mount Surface Mount
Internal Compensation Yes (unity-gain stable) —
RoHS 狀態 Compliant Compliant
Number of Channels — 2 (Dual)
Gain-Bandwidth Product (GBP) — 1.1 MHz
Supply Voltage Range (Single) — 3 V to 30 V
Supply Voltage Range (Dual) — ±1.5 V to ±16 V
Input Bias Current — 45 nA (typical)
Quiescent Current (per amplifier) — 0.7 mA (typical)
Input Common-Mode Range — 0 V to VCC−1.5 V
Output Voltage Swing — [DATA_NEEDED: output swing to rail]
工作溫度範圍 — 0 °C to +70 °C
ESD Protection — Yes (HBM, on inputs)
Internal Frequency Compensation — Yes

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