M25P16-VMN3TPB vs AT45DB041D-SU 比較

詳細並排比較 M25P16-VMN3TPB 由 Micron Technology 與 AT45DB041D-SU 由 Renesas Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M25P16-VMN3TPB M25P16-VMN3TPB - 16Mbit SPI NOR Flash 75MHz | Micron

M25P16-VMN3TPB - 16Mbit SPI NOR Flash 75MHz | Micron

M25P16-VMN3TPB ✓ 啟用中
Renesas Electronics
AT45DB041D-SU AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU ✓ 啟用中

規格比較

參數 M25P16-VMN3TPB AT45DB041D-SU
品牌 Micron Technology Renesas Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash (Serial SPI) DataFLASH NOR
記憶體容量 16 Mbit (2 M x 8) —
組織 2 Mbyte x 8 2,048 pages x 264 bytes (binary) or 256 bytes (standard)
介面 SPI Serial SPI, RapidS (SPI modes 0 and 3)
最大時脈頻率 75 MHz 66 MHz
供應電壓 2.7 V to 3.6 V (single supply) 2.7 V to 3.6 V
Access Time 15 ns —
Page Program Time 0.64 ms typ (256-byte page) [DATA_NEEDED: page program time]
Sector Erase Time 0.6 s typ (512 Kbit sector) —
Bulk Erase Time 13 s typ (16 Mbit) —
Sector Count 32 sectors of 64 Kbyte —
Write Protection Advanced write-protection mechanisms —
工作溫度 -40C to +85C [DATA_NEEDED: operating temperature range]
封裝 8-SOIC (3.90 mm width, 150 mil) 8-pin SOIC (150 mil, EIAJ)
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (TPB suffix) —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
Memory Format — FLASH
Density — 4 Mbit (4,325,376 bits)
SRAM Data Buffers — 2 x 264 bytes
Endurance — 100,000 program/erase cycles per page
Data Retention — 20 years minimum
Security Register — 128 bytes
Lead-Free — Yes

資料表與資源

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