M29F800FT55M3F2 vs M29F800FB55M3F2 比較

詳細並排比較 M29F800FT55M3F2 由 Micron Technology 與 M29F800FB55M3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29F800FT55M3F2 M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FT55M3F2 ✓ 啟用中
Micron Technology
M29F800FB55M3F2 M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 ✓ 啟用中

規格比較

參數 M29F800FT55M3F2 M29F800FB55M3F2
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 Parallel NOR Flash NOR Flash, Parallel
Density 8 Mbit (8389 kbits) 8389 kbits (8 Mbit)
組織 512K x 16 / 1M x 8 512K x 16-bit / 1M x 8-bit
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V 5 V
Boot Block Position Top boot block —
Programming Interface Embedded program/erase controller —
工作溫度 -40C to +125C -40C to +125C
封裝 44-pin SO (SOP) 44-pin SO (SOIC-44)
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
介面 Parallel, x8/x16 selectable Parallel, Asynchronous
Standby Current [DATA_NEEDED: standby current] —
Program/Erase Endurance [DATA_NEEDED: endurance cycles] —
RoHS 狀態 Compliant (lead-free suffix F2) [DATA_NEEDED: RoHS status]
Number of Words — 512 k
Bits per Word — 16 bits
Boot Block Type — Bottom Boot Block
Programming — Embedded byte/word program algorithms
OTP Area — 64 byte
Automotive Qualification — Auto Grade 3 (temperature grade 3, +125C)
Packing — Tape & Reel (T/R)
Endurance — [DATA_NEEDED: program/erase endurance cycles]

資料表與資源

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