M29F800FT55N3F2 vs M29W400FT55N3F 比較

詳細並排比較 M29F800FT55N3F2 由 Micron Technology 與 M29W400FT55N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29F800FT55N3F2 M29F800FT55N3F2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FT55N3F2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FT55N3F2 ✓ 啟用中
Micron Technology
M29W400FT55N3F M29W400FT55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FT55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FT55N3F ✓ 啟用中

規格比較

參數 M29F800FT55N3F2 M29W400FT55N3F
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash, Parallel NOR Flash
記憶體容量 8 Mbit 4 Mbit
組織 1M x 8 bit / 512K x 16 bit 4Mbit, block-organized, top boot block
供應電壓 5 V (single supply) [DATA_NEEDED: supply voltage range]
Access Time 55 ns 55 ns
介面 Parallel Parallel
Boot Block Architecture Top boot block (T) —
Programming Voltage 5.0 V VCC (no 12 V VPP required) —
封裝 48-pin TSOP 48-TSOP I
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (T/R) Tape & Reel (TR suffix)
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Erase Block Size [DATA_NEEDED: block size] —
Data Retention [DATA_NEEDED: data retention] [DATA_NEEDED: data retention]
Program/Erase Cycles [DATA_NEEDED: endurance cycles] —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Active Read Current [DATA_NEEDED: ICC read] —
Bus Configuration — x8 / x16 (BYTE-selectable)
Program/Erase — Block erase, word/byte program
Suspend/Resume — Erase/program suspend and resume
Endurance — [DATA_NEEDED: program/erase cycles]
Prefix F in MPN — Pb-free package suffix

資料表與資源

瀏覽所有產品 建立 BOM 索取報價