M29W064FT70N3F vs M29W800FT70ZA3SF 比較
詳細並排比較 M29W064FT70N3F 由 Micron Technology 與 M29W800FT70ZA3SF 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W064FT70N3F | M29W800FT70ZA3SF |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash |
| Density | 64 Mbit | 8 Mbit |
| 組織 | 8 Mbit x8 / 4 Mbit x16 | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase, read | — |
| VPP Fast Program Voltage | 12 V (optional) | — |
| 介面 | Parallel | Parallel |
| Boot Block Configuration | Top boot block (FT) | Top boot block (FT) |
| 工作溫度 | -40C to +125C | -40C to +125C |
| 封裝 | 48-TSOP I | 48-TFBGA (6 x 8 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Programming Method | Command set / data polling / toggle bit | — |
| Block Protection | Yes, with temporary unprotection | — |
| Product Longevity Program | No | — |
| Width | x8/x16 | — |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| 供應電壓 | — | 2.7 V to 3.6 V |
| Memory Organization | — | [DATA_NEEDED: memory organization x8/x16] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: data retention years] |
| Active Read Current | — | [DATA_NEEDED: active read current] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Package Body Size | — | 6 x 8 mm |
| Ball Pitch | — | 0.80 mm |