MPXC2011DT1 vs MPX10DP 比較

詳細並排比較 MPXC2011DT1 由 NXP Semiconductors 與 MPX10DP 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MPXC2011DT1 MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 ✓ 啟用中

規格比較

參數 MPXC2011DT1 MPX10DP
品牌 NXP Semiconductors STMicroelectronics
類別 Pressure Sensors Pressure Sensors
生命週期狀態 啟用中 啟用中
Pressure Type Differential Differential
Operating Pressure Range 0 kPa to 10 kPa (0 PSI to 1.45 PSI) 0 kPa to 10 kPa (0 to 1.45 PSI)
Full-Scale Output 25 mV typical at 10 V excitation —
Sensitivity 2.5 mV/kPa typical —
Excitation Voltage 3 V DC to 10 V DC (10 V nominal) —
輸出類型 Analog Wheatstone bridge (ratiometric) Analog Wheatstone bridge (uncompensated)
封裝 4-SSIP Chip Pak module, side port —
Port Style Female, 3.25 mm (0.128 in) barbed side port —
Termination Style Through-hole PCB, 4 leads —
工作溫度 0 °C to +85 °C [DATA_NEEDED: operating temperature range]
Compensation On-chip temperature compensated and calibrated —
Technology Piezoresistive silicon strain gauge —
Module Dimensions 7.6 mm x 12.8 mm nominal —
安裝類型 Through-hole (PCB mount with side-port tubing) Through-Hole
RoHS 狀態 [DATA_NEEDED: RoHS status not in web data] [DATA_NEEDED: RoHS status]
Maximum Overload Pressure — [DATA_NEEDED: maximum overload pressure]
Output Voltage Span — 0 mV to 35 mV at 3 V excitation
Supply Voltage (Excitation) — 3 V DC typical
Port Configuration — Dual male 0.19 in (4.93 mm) tube, axial
封裝 / 外殼 — 4-SIP Module
Bridge Impedance — [DATA_NEEDED: input/output bridge resistance]
Linearity — [DATA_NEEDED: linearity %FS]
Temperature Compensation — None (uncompensated)
Media Compatibility — Dry gases (non-corrosive)

資料表與資源

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