MRFE6P9220HR3 vs MRF6P9220HR3 比較
詳細並排比較 MRFE6P9220HR3 由 NXP Semiconductors 與 MRF6P9220HR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRFE6P9220HR3 | MRF6P9220HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode, Lateral | N-Channel Lateral MOSFET (RF Power) |
| Technology | RF Power MOSFET | LDMOS, enhancement-mode |
| Frequency Range | 865 MHz to 1000 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Max | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Drain Current | 1.6 A | — |
| Output Power (Avg, N-CDMA) | 47 W | — |
| Peak Output Power | 200 W | — |
| Power Gain (Typ) | 20 dB at 880 MHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency % at 47 W avg] | [DATA_NEEDED: efficiency at test] |
| 封裝 | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount | NI-860C3 (ceramic, flange-mount) |
| Configuration | Common source, 2 elements | Common-source, single-ended |
| 安裝類型 | Surface Mount with copper heatsink pad | Surface/chassis mount (flange to heatsink) |
| 工作溫度範圍 | [DATA_NEEDED: Tj max / operating range] | — |
| Lead Free Status | Lead Free | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF6P9220HR3 |
| Drain-Source Voltage (VDS) | — | 28 V typical |
| Typical Output Power (Pout) | — | 47 W (average, N-CDMA) |
| Power Gain (Gp) | — | 20 dB typical |
| Drain Current at Test (ID) | — | [DATA_NEEDED: drain current at Pout test] |
| Quiescent Bias Current (IDQ) | — | 1.6 A typical |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, up to ~1 GHz typical) |
| Application | — | Base-station PA, N-CDMA, industrial RF |
| Operating Mode | — | Enhancement mode |