K4A8G085WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
MPN： K4A8G085WB-BIWE ✓ 啟用中K4A8G085WB-BIWE 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption by up to 25%. DDR4 is the industry standard for modern computing platforms, offering higher density, speed, and reliability.
Key features include a memory size of 8Gb, a data rate of 3200 Mbps, and a 1G x 8 organization. The device supports DLL-enabled mode for precise timing and includes on-die termination (ODT) for improved signal integrity. It operates over a temperature range of 0°C to +85°C, making it suitable for commercial and industrial applications.
The K4A8G085WB-BIWE uses Samsung's advanced B-die process technology, which provides excellent overclocking headroom and low latency. The device includes programmable CAS latency, burst length, and refresh rates, allowing system designers to optimize performance. The 78-ball FBGA package offers a small footprint and good thermal performance.
Typical applications include servers, networking equipment, industrial embedded systems, and high-performance computing platforms. The high density and speed make it ideal for memory-intensive tasks such as data analytics, virtualization, and real-time processing.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. Follow the DDR4 layout guidelines for signal integrity, including impedance matching and length matching for data and address lines.
直接替換替代品，適用於 K4A8G085WB-BIWE — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4A8G085WB-BIWE （相同外形與佔位） — 差異在於 Data Rate, Package, Burst Length, Operating Temperature, Supply Voltage.
K4A8G085WG-BIWE
✅ 直接替換📋 參考替代品（不在目錄中）
K4A8G085WB-BCPB
✅ 直接替換✓ 有庫存
$13.7813 / 單位
查看資料表 →K4A8G085WB-BCTD
✅ 直接替換聯絡詢價
查看資料表 →K4A8G085WB-BICH
✅ 直接替換聯絡詢價
查看資料表 →K4A8G085WB-BCRC
✅ 直接替換聯絡詢價
查看資料表 →H5AN8G6NAFR-UHC
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$5.7422 / 單位
查看資料表 →MT40A512M16TB-062E:R
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$60 / 單位
查看資料表 →K4A8G085WB-BIWE 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 記憶體容量 | 8 Gb |
| Memory Organization | 1G x 8 |
| 資料速率 | 3200 Mbps |
| 供應電壓 | 1.2 V |
| 工作溫度 | 0°C to +85°C |
| 封裝 | 78-FBGA |
| 安裝類型 | Surface Mount |
| Memory Interface | Parallel |
| Refresh | Auto-refresh, self-refresh |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
| 無鹵素 | Yes |
K4A8G085WB-BIWE 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 C1 | VDDQ — I/O power supply |
| 腳位 C2 | DQ4 — Data input/output 4 |
| 腳位 C3 | DQ5 — Data input/output 5 |
| 腳位 D1 | VSSQ — I/O ground |
| 腳位 D2 | DQ6 — Data input/output 6 |
| 腳位 D3 | DQ7 — Data input/output 7 |
典型應用
K4A8G085WB-BIWE 適用於 6 應用s: Server Memory, Networking Equipment, Industrial Embedded Systems, High-Performance Computing, Consumer Electronics, Automotive Infotainment.
Server Memory
The K4A8G085WB-BIWE provides high-density 8Gb DDR4 memory for server applications, enabling large memory pools for virtualization, cloud computing, and data analytics. Its 3200 Mbps data rate and 1.2V operation deliver high bandwidth with low power consumption, making it ideal for enterprise servers where performance-per-watt is critical. The 78-FBGA package allows high-density DIMM designs, and the 1G x 8 organization supports ECC and advanced memory features.
推薦
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4A8G085WB-BIWE provides fast, reliable memory for packet buffering and routing tables. Its 3200 Mbps data rate ensures low-latency data processing, while the 1.2V supply reduces power dissipation in dense line cards. The 78-FBGA package is suitable for compact PCB layouts, and the 0°C to +85°C temperature range covers typical networking environments.
推薦
Industrial Embedded Systems
The K4A8G085WB-BIWE is well-suited for industrial embedded systems such as PLCs, HMI panels, and edge computing devices. Its 8Gb density provides ample memory for real-time control and data logging, while the 0°C to +85°C operating range ensures reliability in factory environments. The 1.2V operation reduces heat generation, and the 78-FBGA package allows for compact, rugged designs. The device's high speed supports fast data acquisition and processing.
推薦
High-Performance Computing
For high-performance computing (HPC) applications, the K4A8G085WB-BIWE delivers the bandwidth and capacity needed for complex simulations and data-intensive workloads. Its 3200 Mbps data rate and 8Gb density enable large memory footprints, while the 1.2V supply helps manage power in dense compute nodes. The 78-FBGA package supports high-speed signal integrity, and the device's low latency enhances overall system performance.
推薦
Consumer Electronics
In consumer electronics such as high-end routers, smart TVs, and gaming consoles, the K4A8G085WB-BIWE provides fast, efficient memory for smooth multitasking and media streaming. Its 8Gb density supports large applications, while the 3200 Mbps data rate ensures responsive performance. The 1.2V operation extends battery life in portable devices, and the 78-FBGA package enables slim form factors.
推薦
Automotive Infotainment
The K4A8G085WB-BIWE can be used in automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports complex user interfaces, while the 3200 Mbps data rate enables smooth video playback. The 0°C to +85°C temperature range covers automotive cabin environments, and the 1.2V operation reduces power consumption in vehicles.
推薦
推薦產品摘要
工程參考資料，適用於 K4A8G085WB-BIWE — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A8G085WG-BIWE | K4A8G085WB-BCPB | K4A8G085WB-BCTD | H5AN8G6NAFR-UHC | MT40A512M16TB-062E:R |
|---|---|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | Micron Technology |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C | 0°C to +95°C |
| Temperature Grade | Commercial | Commercial | Commercial | Commercial | Industrial | Industrial |
主要差異化特點
- Samsung B-die process technology (對比H5AN8G6NAFR-UHC)
- Wide availability and ecosystem support (對比MT40A512M16TB-062E:R)
- Multiple temperature grade options (對比K4A8G085WB-BCPB)
設計說明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and ensure low-impedance connections to VSS and VSSQ. Follow DDR4 layout guidelines for impedance matching (typically 40-50 ohms) and length matching for data and address lines.
Maintain proper signal integrity by using controlled impedance traces and minimizing stub lengths. Use on-die termination (ODT) settings as recommended in the datasheet to reduce reflections. Keep the clock and strobe lines length-matched to ensure proper timing.
Ensure adequate thermal management by providing sufficient copper area and airflow around the device. The 78-FBGA package has a thermal resistance that should be considered in high-temperature environments. Monitor junction temperature to stay within the specified operating range.
合規資訊
RoHS compliant per Samsung product page. Not AEC-Q100 qualified - this is a memory component, not an automotive IC.
