MT58L64L32PT7.5 vs MT58L64L32FT-10 比較

詳細並排比較 MT58L64L32PT7.5 由 Micron Technology 與 MT58L64L32FT-10 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
MT58L64L32PT7.5 MT58L64L32PT7.5 - 2Mbit Sync Burst SRAM 133MHz | Micron

MT58L64L32PT7.5 - 2Mbit Sync Burst SRAM 133MHz | Micron

MT58L64L32PT7.5 ✗ 停產
Micron Technology
MT58L64L32FT-10 MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron

MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron

MT58L64L32FT-10 ✗ 停產

規格比較

參數 MT58L64L32PT7.5 MT58L64L32FT-10
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 停產終止 停產終止
記憶體類型 SRAM - Synchronous (SYNCBURST Pipelined) SRAM - Synchronous Burst (Flow-Through SyncBurst)
記憶體容量 2 Mbit 2 Mbit
組織 64K x 32 64K x 32/36 (also 128K x 18)
Clock Frequency 133 MHz —
Access Time 4 ns 10 ns
Supply Voltage Range 3.135 V to 3.6 V —
介面 Parallel Parallel
封裝 100-TQFP (14 x 20.1 mm) 100-TQFP (14 x 20.1 mm)
安裝類型 Surface Mount Surface Mount
Lead Pitch 0.5 mm —
Memory Format Volatile —
工作溫度 [DATA_NEEDED: operating temperature range] 0C to +70C (commercial; -10IT variant industrial)
I/O Type LVTTL-compatible 3.3V —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
MSL 等級 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Manufacturer Micron Technology (also listed under Samsung Semiconductor, Inc. marketplace listing) —
最大時脈頻率 — 66 MHz
Supply Voltage VDD — 3.3 V (+0.3 V/-0.165 V)
Output Buffer Supply VDDQ — 2.5 V isolated or 3.3 V
Write Control — Individual BYTE WRITE enables
Standby Feature — SNOOZE MODE reduced-power standby
Data I/O — Common data inputs and data outputs
Burst Modes — Linear and interleaved burst address sequences

資料表與資源

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