NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya
MPN： NT5AD512M16A4-GZ ✓ 啟用中NT5AD512M16A4-GZ 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and embedded systems, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V) and supports higher densities, enabling larger memory capacities in compact form factors.
Key features of the NT5AD512M16A4-GZ include a maximum clock frequency of 1200 MHz (DDR4-2400), a 16-bit data bus, and support for interleaved burst lengths of 4 and 8. It incorporates advanced functions such as auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check), data mask, write leveling, and ZQ calibration. These features enhance signal integrity, reliability, and ease of use in high-speed systems.
The device is designed for commercial and industrial temperature ranges, ensuring reliable operation in demanding environments. It is RoHS compliant and lead-free, meeting environmental standards. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance, suitable for space-constrained PCB designs.
Typical applications include enterprise servers, data centers, networking equipment, industrial automation, and advanced driver assistance systems (ADAS). The high density and bandwidth make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-performance computing.
When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including matched trace lengths and appropriate on-die termination (ODT) settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper impedance calibration. Additionally, the VTT and VREF supplies should be decoupled with capacitors to minimize noise.
直接替換替代品，適用於 NT5AD512M16A4-GZ — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： NT5AD512M16A4-GZ （相同外形與佔位） — 差異在於 Package, Data Rate, Operating Temperature Range, Supply Voltage, Density.
NT5AD512M16C4-JRI
✅ 直接替換✓ 有庫存
$75.58 / 單位
查看資料表 →NT5AD512M16A4-HR
✅ 直接替換聯絡詢價
查看資料表 →NT5AD512M16
✅ 直接替換聯絡詢價
查看資料表 →MT40A512M16JY-075E
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4A8G165WB-BCWE
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$6.55 / 單位
查看資料表 →H5AN8G6NDJR
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →NT5AD512M16A4-GZ 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 組織 | 512M x 16 |
| Density | 8Gb |
| 供應電壓 | 1.2V |
| 最大時脈頻率 | 1200 MHz |
| 資料匯流排寬度 | 16 bits |
| 封裝 | TFBGA-96 |
| Number of Terminals | 96 |
| Interleaved Burst Length | 4, 8 |
| Access Mode | Four Bank Page Burst |
| 工作溫度範圍 | Commercial and Industrial |
| RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| CRC Function | Yes |
| Data Mask Function | Yes |
| Write Leveling Function | Yes |
| ZQ Calibration Function | Yes |
NT5AD512M16A4-GZ 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 C1 | VDDQ — Power supply for output buffers |
| 腳位 C2 | DQ4 — Data input/output 4 |
| 腳位 C3 | DQ5 — Data input/output 5 |
| 腳位 D1 | VSSQ — Ground for output buffers |
| 腳位 D2 | DQ6 — Data input/output 6 |
| 腳位 D3 | DQ7 — Data input/output 7 |
| 腳位 E1 | VDD — Power supply |
| 腳位 E2 | DQS0 — Data strobe 0 |
| 腳位 E3 | DQS0# — Data strobe 0 complement |
| 腳位 F1 | VSS — Ground |
| 腳位 F2 | DM0 — Data mask 0 |
| 腳位 F3 | VDDQ — Power supply for output buffers |
| 腳位 G1 | VSSQ — Ground for output buffers |
| 腳位 G2 | CK — Clock input |
| 腳位 G3 | CK# — Clock input complement |
| 腳位 H1 | VDD — Power supply |
| 腳位 H2 | CKE — Clock enable |
| 腳位 H3 | CS# — Chip select |
| 腳位 J1 | VSS — Ground |
| 腳位 J2 | RAS# — Row address strobe |
| 腳位 J3 | CAS# — Column address strobe |
| 腳位 K1 | VDDQ — Power supply for output buffers |
| 腳位 K2 | WE# — Write enable |
| 腳位 K3 | A0 — Address input 0 |
| 腳位 L1 | VSSQ — Ground for output buffers |
| 腳位 L2 | A1 — Address input 1 |
| 腳位 L3 | A2 — Address input 2 |
| 腳位 M1 | VDD — Power supply |
| 腳位 M2 | A3 — Address input 3 |
| 腳位 M3 | A4 — Address input 4 |
| 腳位 N1 | VSS — Ground |
| 腳位 N2 | A5 — Address input 5 |
| 腳位 N3 | A6 — Address input 6 |
| 腳位 P1 | VDDQ — Power supply for output buffers |
| 腳位 P2 | A7 — Address input 7 |
| 腳位 P3 | A8 — Address input 8 |
| 腳位 R1 | VSSQ — Ground for output buffers |
| 腳位 R2 | A9 — Address input 9 |
| 腳位 R3 | A10/AP — Address input 10 / Auto precharge |
| 腳位 T1 | VDD — Power supply |
| 腳位 T2 | A11 — Address input 11 |
| 腳位 T3 | A12/BC# — Address input 12 / Burst chop |
| 腳位 U1 | VSS — Ground |
| 腳位 U2 | A13 — Address input 13 |
| 腳位 U3 | A14 — Address input 14 |
| 腳位 V1 | VDDQ — Power supply for output buffers |
| 腳位 V2 | A15 — Address input 15 |
| 腳位 V3 | BA0 — Bank address 0 |
| 腳位 W1 | VSSQ — Ground for output buffers |
| 腳位 W2 | BA1 — Bank address 1 |
| 腳位 W3 | BA2 — Bank address 2 |
| 腳位 Y1 | VDD — Power supply |
| 腳位 Y2 | BG0 — Bank group 0 |
| 腳位 Y3 | BG1 — Bank group 1 |
| 腳位 AA1 | VSS — Ground |
| 腳位 AA2 | ACT# — Activate command |
| 腳位 AA3 | PAR — Parity input |
| 腳位 AB1 | VDDQ — Power supply for output buffers |
| 腳位 AB2 | ALERT# — Alert output |
| 腳位 AB3 | RESET# — Reset input |
| 腳位 AC1 | VSSQ — Ground for output buffers |
| 腳位 AC2 | TEN — Temperature sensor enable |
| 腳位 AC3 | ZQ — Calibration reference |
| 腳位 AD1 | VDD — Power supply |
| 腳位 AD2 | VREFCA — Reference voltage for command/address |
| 腳位 AD3 | VTT — Termination voltage |
典型應用
NT5AD512M16A4-GZ 適用於 6 應用s: Enterprise Servers, Data Center & Enterprise Computing, Networking Equipment, Industrial Automation, Automotive ADAS, Consumer Electronics.
Enterprise Servers
The NT5AD512M16A4-GZ provides high-density, high-bandwidth memory for enterprise servers, supporting virtualization, database management, and cloud computing. Its 8Gb density and DDR4-2400 speed enable fast data access and large memory pools, improving overall system performance. The 1.2V operation reduces power consumption, lowering total cost of ownership in data centers.
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Data Center & Enterprise Computing
In data centers, the NT5AD512M16A4-GZ supports high-performance computing, AI inference, and big data analytics. Its high bandwidth and low latency are critical for processing large datasets. The device's industrial temperature range ensures reliable operation in demanding environments. The built-in temperature sensor and auto self-refresh enhance data integrity and power efficiency.
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Networking Equipment
The NT5AD512M16A4-GZ is ideal for networking equipment such as routers, switches, and firewalls, where high-speed packet processing and large routing tables require substantial memory. Its 8Gb density and DDR4-2400 speed provide the necessary bandwidth for line-rate forwarding. The compact TFBGA package saves PCB space, and the low 1.2V supply reduces heat generation in dense chassis.
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Industrial Automation
In industrial automation, the NT5AD512M16A4-GZ provides reliable memory for PLCs, robotics, and machine vision systems. Its industrial temperature range ensures operation in harsh environments. The device's CRC and data mask functions improve data integrity in noisy industrial settings. The 1.2V operation reduces power consumption, which is beneficial for energy-efficient factory floors.
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Automotive ADAS
The NT5AD512M16A4-GZ is used in automotive advanced driver assistance systems (ADAS) for real-time sensor fusion and decision making. Its high bandwidth supports processing of camera, radar, and LiDAR data. The device's industrial temperature range is suitable for automotive environments. The built-in temperature sensor and auto self-refresh enhance reliability in varying thermal conditions.
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Consumer Electronics
The NT5AD512M16A4-GZ can be used in high-end consumer electronics such as gaming consoles, set-top boxes, and smart TVs, where high memory bandwidth is needed for graphics and multimedia. Its 8Gb density allows for smooth multitasking and fast app loading. The low 1.2V supply helps extend battery life in portable devices, and the compact TFBGA package fits slim designs.
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推薦產品摘要
工程參考資料，適用於 NT5AD512M16A4-GZ — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | NT5AD512M16C4-JRI | MT40A512M16JY-075E | K4A8G165WB-BCWE |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Industrial temperature range support (對比MT40A512M16JY-075E)
- Same-brand availability (對比K4A8G165WB-BCWE)
- Built-in temperature sensor (對比H5AN8G6NDJR)
設計說明
For DDR4 routing, maintain matched trace lengths for DQ, DQS, and address/command signals to ensure signal integrity. Use controlled impedance traces (typically 40-50 ohms single-ended, 80-100 ohms differential) and provide proper termination for VTT. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.
The NT5AD512M16A4-GZ operates over commercial and industrial temperature ranges. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The TFBGA package has a low thermal resistance, but power dissipation should be considered. Monitor the built-in temperature sensor to implement thermal throttling if necessary.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Also, ensure VREFCA and VTT are properly decoupled to avoid reference voltage noise, which can cause data errors.
合規資訊
RoHS compliant and lead-free as per distributor listings. AEC-Q100 not applicable as this is a memory IC, not an automotive-qualified part.
