PDRQLAKCDF12-00 vs K4RAH086VE-BCWM 比較
詳細並排比較 PDRQLAKCDF12-00 由 Samsung Electronics 與 K4RAH086VE-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ 啟用中Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ 啟用中規格比較
| 參數 | PDRQLAKCDF12-00 | K4RAH086VE-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $7.60 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 組織 | 1G x 16 | 2G x 8 |
| 資料速率 | 7200 Mbps per pin | 5600 Mbps |
| Speed Bin | DDR5-7200 | — |
| Operating Voltage | 1.1 V | — |
| 封裝 | 102-ball FBGA | 82-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Generation | DDR5 (improved from 6400 Mbps generation) | DDR5 |
| 介面 | JEDEC DDR5 | — |
| Package Height | [DATA_NEEDED: package height] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| tCK / Cycle Time | [DATA_NEEDED: clock cycle time] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CL at 5600 Mbps] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| 生命週期狀態 | — | Mass Production |
| Manufacturer | — | Samsung Electronics |