PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
MPN： PDRQLAKCDF12-00 ✓ 啟用中PDRQLAKCDF12-00 概覽
A DRAM (Dynamic Random Access Memory) is the primary volatile working memory in modern computing systems, sitting at the top of the memory hierarchy below CPU caches. DDR5 SDRAM is the fifth generation of double-data-rate synchronous DRAM, doubling the bank groups and burst length of DDR4, moving the power management IC (PMIC) onto the module, and lowering the per-bit operating voltage to 1.1 V for improved power efficiency in high-density memory subsystems.
Key features of the PDRQLAKCDF12-00 include its 7200 Mbps data rate - an improvement over the previous 6400 Mbps DDR5 generation - a 1G x16 organization suited to wide-memory-bus designs, and the JEDEC-standard 1.1 V operating voltage with on-die termination and on-die ECC features typical of the DDR5 generation. The 102-ball FBGA (fine-pitch ball grid array) package provides a compact surface-mount footprint for direct mounting on memory modules or on-board memory designs.
Architecturally, this device belongs to Samsung's DDR5 DRAM component family. Samsung has sampled native 7200 Mbps DDR5 products in two packages: the 78-ball FBGA PDRQL8KCBF12-00 and the 102-ball FBGA PDRQLAKCDF12-00, both supporting 7200 Mbps at 1.1 V per JEDEC specification. The x16 organization of this part reduces the number of components needed to populate a 64-bit or 128-bit channel.
Typical applications include PC and workstation UDIMM/SO-DIMM memory modules, client and server RDIMM designs, graphics and accelerator board memory, and embedded on-board memory in networking and industrial systems that require high bandwidth.
Designers should verify BIOS/memory-controller training support for the 7200 Mbps speed bin, and ensure power delivery follows the DDR5 PMIC architecture at 1.1 V.
This page synthesizes distributor availability data, speed-bin context, and drop-in alternative options not found on a single manufacturer page.
直接替換替代品，適用於 PDRQLAKCDF12-00 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： PDRQLAKCDF12-00 （相同外形與佔位） — 差異在於 Data Rate, Package, Generation, Memory Type, Density.
K4RAH165VB-BCWM
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4RAH165VP-BCWM
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$24.6094 / 單位
查看資料表 →K4RAH165VB-BCQK
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4RAH165VB-BIQK
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4RAH086VE-BCWM
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$7.6 / 單位
查看資料表 →PDRQLAKCDF12-00 最大額定值與電氣特性
| 記憶體類型 | DDR5 SDRAM |
| Density | 16 Gbit |
| 組織 | 1G x 16 |
| 資料速率 | 7200 Mbps per pin |
| Speed Bin | DDR5-7200 |
| Operating Voltage | 1.1 V |
| 封裝 | 102-ball FBGA |
| 安裝類型 | Surface Mount |
| Generation | DDR5 (improved from 6400 Mbps generation) |
| 介面 | JEDEC DDR5 |
PDRQLAKCDF12-00 102-ball fbga 腳位配置指南
PDRQLAKCDF12-00（102-ball fbga 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： PDRQLAKCDF12-00.
請參閱 資料表 以查看完整腳位配置。
典型應用
PDRQLAKCDF12-00 適用於 6 應用s: PC and Workstation Memory Modules (UDIMM/SO-DIMM), Server RDIMM and Data Center Memory, Graphics and AI Accelerator Board Memory, Networking and Communication Equipment, Industrial Automation and Edge Computing, Embedded On-Board Memory in Consumer and IoT Hubs.
PC and Workstation Memory Modules (UDIMM/SO-DIMM)
The PDRQLAKCDF12-00 fits client PC UDIMM and SO-DIMM designs where its 7200 Mbps data rate and 1G x16 organization deliver high per-channel bandwidth at the JEDEC 1.1 V operating voltage. A typical DDR5 UDIMM places multiple x16 components per 64-bit channel, and the on-module PMIC converts 5 V to the 1.1 V DRAM rail. The DDR5-7200 bin requires memory-controller training support, but delivers roughly 12.5% more bandwidth than the 6400 Mbps generation, improving integrated-graphics and content-creation performance. designers should follow Samsung layout guidance for length matching and on-die termination settings.
推薦
Server RDIMM and Data Center Memory
Data center server platforms use registered DIMMs built from DDR5 x16 components; the PDRQLAKCDF12-00's 16 Gbit density allows high-capacity RDIMMs when combined with register clock drivers and SPD hubs. Its 1.1 V operation reduces per-DIMM power, which directly cuts data center cooling budgets, while the 7200 Mbps speed bin supports next-generation Xeon/EPYC memory controllers. The x16 organization reduces component count per module, improving yield and cost. Server designs must validate RCD compatibility and on-die ECC reporting in the BMC memory-training flow before production.
推薦
Graphics and AI Accelerator Board Memory
GPU add-in boards and AI accelerator cards often attach DDR5 components directly to the PCB around the host processor. The PDRQLAKCDF12-00's 7200 Mbps rate provides the bandwidth headroom these workloads demand, and its 102-ball FBGA footprint supports dense on-board arrays of x16 devices. At 1.1 V, a bank of components dissipates measurably less heat than an equivalent DDR4-3200 array, easing airflow design. Designers must implement fly-by command/address routing, reference-voltage planes, and per-byte DQS training consistent with JEDEC DDR5 board design guidelines for signal integrity at 7200 Mbps.
推薦
Networking and Communication Equipment
Enterprise switches, routers, and 5G baseband cards use DDR5 as packet-buffer and control-plane memory. The PDRQLAKCDF12-00's combination of 16 Gbit density and 1G x16 organization suits wide, deep buffer pools, while 7200 Mbps operation sustains line-rate packet processing without memory bottlenecks. The 102-ball FBGA surface-mount package allows direct on-board attachment - no sockets, improving reliability in always-on networking hardware. Industrial-temperature screening options in the K4RAH family cover extended-ambient telecom racks; verify the required temperature grade and conformance testing for NEBS-type deployments.
推薦
Industrial Automation and Edge Computing
Industrial PCs, machine-vision controllers, and edge AI gateways increasingly adopt DDR5 for larger working sets in vision inference and protocol processing. The PDRQLAKCDF12-00's 1.1 V operation lowers rail power in passively cooled enclosures, and its 7200 Mbps bandwidth accelerates frame-buffer handling in multi-camera vision systems. On-board soldered DDR5 also resists vibration better than socketed modules. For these deployments, pair the DRAM with wide-input power modules and verify memory-controller training margins over the full -40C to +85C ambient range if industrial-screening variants are selected.
推薦
Embedded On-Board Memory in Consumer and IoT Hubs
Smart-home hubs, premium set-top boxes, and in-vehicle infotainment head units use soldered-down DDR5 to save space and improve mechanical robustness. The PDRQLAKCDF12-00's 102-ball FBGA supports compact multi-layer layouts, and 16 Gbit capacity covers modern media pipelines with headroom. Its DDR5-7200 bin enables responsive 4K/8K media playback and edge AI workloads at 1.1 V, reducing thermal design constraints in sealed enclosures. Consumer platforms should confirm SoC memory-controller support for the speed bin and implement JEDEC DDR5 power-ramp sequencing for reliable boot.
推薦
推薦產品摘要
工程參考資料，適用於 PDRQLAKCDF12-00 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4RAH165VB-BCWM | K4RAH165VP-BCWM | K4RAH165VB-BCQK | K4RAH086VE-BCWM |
|---|---|---|---|---|---|
| Package | 102-ball FBGA | 102-ball FBGA - same | 102-ball FBGA - same | 102-ball FBGA - same | 102-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit (2G x8) |
| Organization | 1G x16 | 1G x16 | 1G x16 | 1G x16 | 2G x8 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
主要差異化特點
- Native 7200 Mbps speed bin (對比K4RAH165VB-BCWM)
- x16 organization reduces component count (對比K4RAH086VE-BCWM)
- 102-ball FBGA footprint flexibility (對比PDRQL8KCBF12-00)
設計說明
DDR5 moves voltage regulation onto the module: a dedicated PMIC generates the 1.1 V DRAM core rail from a 5 V or 12 V input with I2C/I3C programmability. Size the PMIC for peak current of all mounted components - estimate roughly 16 Gbit x16 parts drawing several hundred mA each during 7200 Mbps bursts (exact current per Samsung datasheet IDD tables). Verify power-ramp sequencing between VDD, VDDQ, and VPP per the JEDEC DDR5 specification to avoid latch-up during hot-plug or brownout events.
At 7200 Mbps, DDR5 signal integrity demands careful stackup and routing: use fly-by CA routing, length-match DQ/DQS byte groups within tight intra-byte skew budgets, and reference DQ nets to solid VSS/VDDQ planes with adequate decoupling. The 102-ball FBGA footprint allows via-in-pad or dog-bone escape; for arrays, prefer via-in-pad with filled vias to shorten the electrical path. Follow the Samsung DDR5 component layout guide and your memory-controller (CPU/SoC) design guideline, which take precedence over generic DRAM rules at this speed bin.
Do not assume the 7200 Mbps speed bin works on every DDR5 memory controller - many 2024-2025 chipsets train only to 5600/6400 Mbps. Confirm BIOS/firmware training tables support DDR5-7200 before committing BOM. Second, Samsung suffix codes encode speed, package, and screening; substituting between CDF/CBF and K4RAH suffix variants without checking the ordering-information table can silently change the speed bin or temperature grade. Always request the official Samsung DDR5 datasheet and match the full ordering code, not just the prefix.
合規資訊
Compliance data was not present in the retrieved web data. Samsung DDR5 components are generally RoHS-compliant, but confirm with the official Samsung product page and certificate of conformance before release.
