SM4036NHKP vs BSC0901NSATMA1 比較

詳細並排比較 SM4036NHKP 由 Sinopower Semiconductor 與 BSC0901NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Sinopower Semiconductor
SM4036NHKP SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower

SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower

SM4036NHKP ✓ 啟用中

規格比較

參數 SM4036NHKP BSC0901NSATMA1
品牌 Sinopower Semiconductor Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 80 A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) in mOhm] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th)]
封裝 PDFN-8 (DFN5x6) 5x6 mm TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
安裝類型 Surface Mount Surface Mount
Marking Code 4036NH —
工作溫度範圍 [DATA_NEEDED: junction temperature range] -55C to +150C
Power Dissipation (PD) [DATA_NEEDED: PD max] —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Avalanche Rating Yes (per datasheet) —
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant (per Sinopower product page) Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 30V
Technology — N-Channel Trench MOSFET (OptiMOS)
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
濕度敏感等級 (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

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