2EDL8034G4CXTMA1 vs 1EDN7146UXTSA1 比較

詳細並排比較 2EDL8034G4CXTMA1 由 Infineon 與 1EDN7146UXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ 啟用中
Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 啟用中

規格比較

參數 2EDL8034G4CXTMA1 1EDN7146UXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Half-Bridge (High-Side / Low-Side) Single-channel high-side TDI gate driver
Configuration Non-Inverting —
Bootstrap Voltage (Max) 120 V —
Peak Source Current 3 A —
Peak Sink Current 4 A —
輸出數量 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V —
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) —
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
工作接面溫度 -40 C to +125 C —
封裝 PG-VDSON-10-2 (DSN-10) with exposed pad PG-VSON-1 (6-pin with exposed pad)
安裝類型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
MSL 等級 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
上升時間 — [DATA_NEEDED: typical rise time ns]
下降時間 — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
工作溫度範圍 — -40C to +125C
Target Transistor — GaN SG HEMT or power MOSFET
RoHS 狀態 — Compliant
Topology Support — Half-bridge, low-side, high-side

資料表與資源

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