2EDL8034G4CXTMA1 vs 2ED2103S06FXUMA1 比較
詳細並排比較 2EDL8034G4CXTMA1 由 Infineon 與 2ED2103S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2EDL8034G4CXTMA1 | 2ED2103S06FXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | — |
| Configuration | Non-Inverting | Non-Inverting |
| Bootstrap Voltage (Max) | 120 V | 675 V |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| 輸出數量 | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | — |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | — |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| 工作接面溫度 | -40 C to +125 C | — |
| 封裝 | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-DSO-8-69 (DSO-8 with exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| 功能 | — | Half-Bridge Gate Driver |
| Technology | — | High-Voltage Level Shift (SOI) |
| Number of Drivers | — | 2 (high-side + low-side) |
| Driven Device Type | — | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Bootstrap Diode | — | Integrated |
| Logic Input Compatibility | — | 3.3 V / 5 V |
| Under-Voltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| 工作溫度範圍 | — | -40C to +125C |
| RoHS 狀態 | — | Compliant |