EP3SE110F1152I3N - Stratix III E FPGA, 107K LE, 1152-FCBGA | Altera
MPN： EP3SE110F1152I3N ⚠ 最後購買機會EP3SE110F1152I3N 概覽
A Field Programmable Gate Array (FPGA) is a reprogrammable semiconductor device whose logic fabric, interconnect and I/O can be configured by the end user to implement custom digital circuits, soft processors, DSP pipelines and high-speed serial interfaces. FPGAs sit at the highest level of the programmable-logic taxonomy: programmable logic device (PLD) -> complex programmable logic device (CPLD) -> FPGA -> SoC FPGA. They are preferred over ASICs for low-volume, high-complexity designs and over microcontrollers for parallel, deterministic, low-latency DSP and signal-processing workloads. The Stratix III E family specifically belongs to the high-performance, memory- and multiplier-rich branch of that hierarchy.
Key features include 107,500 logic elements, 8,936,448 RAM bits, 744 user I/Os, 4300 Logic Array Blocks (LABs) per the Mouser listing, a core voltage of 1.1 V, and an industrial operating temperature range (-40C to +100C for the I3 speed grade). The I3N suffix denotes industrial temperature, fast -3 speed grade, lead-free packaging. The device is built on a TSMC 65 nm process and supports up to 12.5 Gbps transceivers in some Stratix III variants, modular I/O banks for vertical migration, output delay and current strength control.
Architecturally, Stratix III E uses Altera's adaptive logic module (ALM), which doubles the effective logic capacity per area versus prior generations, and integrates dedicated DSP blocks (multipliers + adders), M9K/M144K memory blocks, PLLs and a configuration controller. Package and die enhancements include dynamic on-chip termination, programmable output delay and current strength control - features that deliver best-in-class signal integrity at high toggle rates.
Typical applications include high-end ASIC prototyping, wireless baseband DSP, military radar processing, high-performance computing (HPC) acceleration, software-defined radio (SDR), video broadcast infrastructure, and medical imaging front-ends. The high logic and memory density also suit ASIC emulation and design-for-test (DFT) platforms.
When designing with this device, ensure the PCB has a 35 x 35 mm FCBGA footprint with controlled-impedance escape routing, adequate power-rail decoupling for the 1.1 V core and 2.5 V/3.3 V auxiliary supplies, and a JTAG header for Quartus II programming. Heed the Stratix III Device Handbook pinout guidelines for proper bank-by-bank VCCIO grouping.
This page synthesizes real distributor pricing from DigiKey and Mouser, same-brand Altera Stratix III E drop-in variants, and practical design notes not found in the manufacturer datasheet alone.
直接替換替代品，適用於 EP3SE110F1152I3N — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： EP3SE110F1152I3N （相同外形與佔位） — 差異在於 Operating Temperature, Speed Grade, Process Technology, Family, Package.
EP3SE110F1152I3
✅ 直接替換聯絡詢價
查看資料表 →EP3SE110F1152I2N
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查看資料表 →EP3SE110F1152C4N
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查看資料表 →EP3SE110F1152C4LN
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查看資料表 →EP3SE110F1152C4L
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查看資料表 →EP3SE110F1152C4
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查看資料表 →EP3SE110F1152C3N
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查看資料表 →EP3SE110F1152C3
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查看資料表 →EP3SE110F1152I3N 最大額定值與電氣特性
| Series | Stratix III E |
| Family | Stratix III E FPGA |
| Manufacturer | Altera (now Intel PSG) |
| Logic Elements (LE) | 107,500 |
| Total RAM Bits | 8,936,448 |
| Maximum User I/Os | 744 |
| Logic Array Blocks (LABs) | 4300 |
| Number of I/O Banks | Modular I/O banks (see Stratix III Device Handbook) |
| Core Voltage | 1.1 V |
| Process Technology | 65 nm CMOS |
| 工作溫度範圍 | -40C to +100C (industrial, I3 grade) |
| Speed Grade | -3 (I3 fast grade, industrial) |
| 封裝 | 1152-ball FC-FBGA (Flip-Chip Fine-pitch BGA) |
| 安裝類型 | Surface Mount |
| Lead-Free / RoHS | Lead-free (N suffix); RoHS compliance status: see Stratix III Device Handbook |
| Configuration | JTAG via Quartus II; supports AS, PS, JTAG, FPP modes |
| Internal Supply Voltage (Max) | 0.94 V (per Partstack listing) |
EP3SE110F1152I3N 1152-ball fc-fbga (flip-chip fine-pitch bga) 腳位配置指南
EP3SE110F1152I3N（1152-ball fc-fbga (flip-chip fine-pitch bga) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： EP3SE110F1152I3N.
請參閱 資料表 以查看完整腳位配置。
典型應用
EP3SE110F1152I3N 適用於 6 應用s: High-Performance ASIC Prototyping, Wireless Baseband DSP, Military Radar Signal Processing, Software-Defined Radio (SDR) Platforms, Medical Imaging Front-Ends (Ultrasound / CT), Video Broadcast Infrastructure.
High-Performance ASIC Prototyping
The EP3SE110F1152I3N's 107,500 logic elements and 8,936,448 bits of embedded memory let it absorb full ASIC RTL partitions for functional verification before tape-out. Its 744 user I/Os support high-pin-count ASIC emulations across PCIe, DDR2/3 and SerDes channels. Placed on a prototyping PCB with the Quartus II TimeQuest fitter, it typically reaches 200-300 MHz on pipelined designs - close to silicon speed - and the I3 industrial temperature grade allows lab-to-handoff testing without thermal derating.
推薦
Wireless Baseband DSP
With up to 896 18x18 multipliers and dedicated DSP blocks, the EP3SE110F1152I3N is well-suited for 3G/4G baseband channel cards and LTE PHY-layer processing. The high multiplier count and 8.9 Mbit block RAM allow implementation of 256-point FFTs, channel equalizers and turbo-decoder paths in a single device. The 12.5 Gbps-capable transceivers (in Stratix III variants) interface to RF front-ends via CPRI or OBSAI, while the I3 industrial grade supports outdoor base-station environments.
推薦
Military Radar Signal Processing
Radar systems require high-throughput pulse compression, moving-target-indication (MTI) and synthetic-aperture radar (SAR) processing - tasks that map cleanly onto the EP3SE110F1152I3N's DSP blocks and M144K memory. The device's industrial -40C to +100C temperature range is acceptable in many ground- and shipboard-radar enclosures, while its 744 I/Os sustain multi-channel ADC/DAC hookups. The 65 nm process offers better radiation tolerance than smaller nodes at modest clock rates, making it suitable for non-space military platforms.
推薦
Software-Defined Radio (SDR) Platforms
SDR platforms benefit from the EP3SE110F1152I3N's combination of high logic density, large block RAM for sample buffering, and flexible I/O banks supporting LVDS, LVPECL and HSTL for direct ADC interface. A typical wideband-receiver design places a 16-bit ADC at 250-500 MSPS directly into the FPGA's LVDS pairs, then performs channelization, DDC and demodulation in DSP blocks. The I3 industrial temperature grade permits deployment in outdoor SDR enclosures for tactical comms.
推薦
Medical Imaging Front-Ends (Ultrasound / CT)
The EP3SE110F1152I3N's high memory bandwidth and 744 I/Os support ultrasound beamformers with 64-128 channels, each running at 40 MSPS, with on-chip buffering for raw RF data. CT image reconstruction uses the block RAM for sinogram storage and DSP blocks for back-projection kernels. The 1.1 V core keeps per-channel power dissipation low - critical for cart-based and portable medical imaging - while the I3 industrial temperature range suits clinical environments.
推薦
Video Broadcast Infrastructure
Broadcast routers and production switchers use the EP3SE110F1152I3N to handle uncompressed SDI/HD-SDI/3G-SDI streams at 270 Mbps to 3 Gbps, plus JPEG2000 and H.264 encoding pipelines. The device's 744 I/Os aggregate 32-64 SDI streams with on-chip cross-point switching, while its DSP blocks handle real-time video scaling and color-space conversion. Industrial temperature support is essential for outdoor broadcast transmitters and weatherproof head-end equipment.
推薦
推薦產品摘要
工程參考資料，適用於 EP3SE110F1152I3N — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | EP3SE110F1152I3 | EP3SE110F1152I2N | EP3SE110F1152C4N | EP3SE110F1152C4LN | EP3SE110F1152C3N |
|---|---|---|---|---|---|---|
| Brand | Altera (Intel PSG) | Altera (Intel PSG) | Altera (Intel PSG) | Altera (Intel PSG) | Altera (Intel PSG) | Altera (Intel PSG) |
| Package | 1152-ball FC-FBGA | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same |
| Logic Elements | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 |
| Total RAM Bits | 8,936,448 | 8,936,448 | 8,936,448 | 8,936,448 | 8,936,448 | 8,936,448 |
| Maximum User I/Os | 744 | 744 | 744 | 744 | 744 | 744 |
| Speed Grade | I3 (fast, industrial) | I3 (fast, industrial) | I2 (slower, industrial) | C4 (slower, commercial) | C4L (low-power, commercial) | C3 (fast, commercial) |
| Operating Temperature | -40C to +100C (industrial) | -40C to +100C (industrial) | -40C to +100C (industrial) | 0C to +85C (commercial) | 0C to +85C (commercial) | 0C to +85C (commercial) |
| Lead-Free / RoHS | Yes (N suffix) | No (no N suffix) | Yes | Yes | Yes | Yes |
主要差異化特點
- Same 1152-FCBGA footprint across all temperature/speed variants (對比EP3SE110F780I3N (780-pin FC-FBGA))
- Highest LE and RAM density in the Stratix III E family (對比EP3SE50F780C4N)
- Industrial temperature range supports field deployment (對比EP3SE110F1152C4N (commercial 0C-85C))
設計說明
The EP3SE110F1152I3N uses a 35 x 35 mm FC-FBGA with 1.0 mm ball pitch (verify exact pitch against the Stratix III Device Handbook pin table). Use a 12-15 mil via-in-pad microvia stack-up (e.g., 4-2-4 or similar HDI process) to escape the inner balls. Maintain 100-ohm differential impedance for LVDS pairs and 50-ohm single-ended for general-purpose CMOS I/O. Apply ground-balls-guard pattern around each differential pair for crosstalk isolation.
Stratix III E devices require separate VCCINT (1.1 V core), VCCAUX (2.5 V), VCCPD (2.5 V or 3.0 V for 3.3 V LVCMOS), per-bank VCCIO (1.2 V-3.0 V), and VCCPGM (1.8 V-3.3 V) rails. Decoupling must include 0.1 uF X7R capacitors at every power-ball cluster plus bulk polymer or tantalum capacitors on each rail. Estimated core current at full utilization (107,500 LE, 50% toggle, 200 MHz) is in the 3-5 A range - size the 1.1 V regulator for at least 8 A with adequate thermal margin.
The 1152-ball FC-FBGA package has a JEDEC JESD51 theta-JA of approximately 10-12 C/W with a 4-layer PCB and proper thermal-via array under the die. Estimated worst-case junction-to-ambient thermal rise at 8 W is 80-100 C, demanding either forced-air cooling or a heat-spreader for industrial temperature compliance. Use the Quartus II PowerPlay early-power-estimator before PCB layout to size the cooling solution.
Do not mix LVDS and 3.3 V LVCMOS within the same I/O bank without confirming VCCIO compatibility. The Stratix III E is sensitive to VCCIO ramp ordering during configuration; ensure all rails reach regulation before MSEL pins are sampled. Failing to enable the CRC error-detection block on critical configuration bitstreams can mask bit-flip-induced system failures in long-lifecycle deployments.
合規資訊
Lead-free and RoHS-compliant per Stratix III Device Handbook ordering information (N suffix). AEC-Q100 qualification is not applicable for FPGAs; refer to specific application notes for automotive-grade variant EP4CGX series if needed. Halogen-free and conflict-minerals status not explicitly stated in verified data.
