H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
MPN： H5TC4G63CFR-xxJ ✓ 啟用中H5TC4G63CFR-xxJ 概覽
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. DDR3L operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V), while maintaining compatibility with DDR3 signaling levels. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in laptops, servers, and embedded applications.
Key features include a 4Gb density, 16-bit I/O width, and support for various speed grades (e.g., -xxJ indicates a specific speed grade, likely 1600 Mbps or 1866 Mbps). The device uses a 96-ball FBGA package, which is standard for DDR3L SDRAM, ensuring compatibility with existing PCB designs. The operating temperature range is from 0°C to 95°C (case temperature), and it supports auto-refresh and self-refresh modes for power saving.
Technically, the H5TC4G63CFR-xxJ employs an 8n-prefetch architecture, which allows high-speed data transfer by fetching 8 data bits per clock cycle per I/O. It includes programmable CAS latency, burst length (8 and 4 with burst chop), and on-die termination (ODT) for signal integrity. The device also supports write leveling and read leveling for improved timing margins in high-speed systems.
Typical applications include main memory for laptops, ultrabooks, and embedded systems, as well as networking equipment like routers and switches, and industrial computing platforms. Its low voltage and high density make it suitable for power-constrained designs that require large memory capacity.
When designing with this component, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the DDR3L layout guidelines for signal integrity, including impedance matching and length matching for data and address lines. The device requires a stable 1.35V supply and a reference voltage (VREF) for the command/address bus.
直接替換替代品，適用於 H5TC4G63CFR-xxJ — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5TC4G63CFR-xxJ （相同外形與佔位） — 差異在於 Package, Density, Clock Frequency, Clock Input, Data Strobe.
H5TC4G63CFR-xxA
✅ 直接替換📋 參考替代品（不在目錄中）
H5TC4G63CFR-RDA
✅ 直接替換📋 參考替代品（不在目錄中）
H5TC4G63CFR-RDAR
✅ 直接替換📋 參考替代品（不在目錄中）
K4B4G1646E-BYMA
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.3182 / 單位
查看資料表 →MT41K256M16TW-107
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.1 / 單位
查看資料表 →H5TC4G63CFR-xxJ 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4 Gb |
| 組織 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V + 0.100 / - 0.067V |
| Clock Input | Fully differential (CK, CK#) |
| Data Strobe | Differential (DQS, DQS#) |
| On-Chip DLL | Yes |
| DM Mask | Yes |
| 封裝 | 96-ball FBGA |
| 工作溫度範圍 | 0°C to 95°C (case) |
| RoHS | Compliant |
| Lead-Free | Yes |
| 無鹵素 | Yes |
| Burst Length | 8 and 4 (with burst chop) |
| On-Die Termination | Yes |
| Refresh | Auto-refresh and self-refresh |
H5TC4G63CFR-xxJ 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 C1 | VDDQ — I/O power supply |
| 腳位 C2 | DQS — Data strobe (positive) |
| 腳位 C3 | DQS# — Data strobe (negative) |
| 腳位 D1 | VSSQ — I/O ground |
| 腳位 D2 | CK — Clock input (positive) |
| 腳位 D3 | CK# — Clock input (negative) |
| 腳位 E1 | CKE — Clock enable |
| 腳位 E2 | CS# — Chip select |
| 腳位 E3 | RAS# — Row address strobe |
| 腳位 F1 | CAS# — Column address strobe |
| 腳位 F2 | WE# — Write enable |
| 腳位 F3 | A0 — Address input 0 |
典型應用
H5TC4G63CFR-xxJ 適用於 6 應用s: Mobile Devices, Embedded Systems, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment.
Mobile Devices
The H5TC4G63CFR-xxJ's low 1.35V operation reduces power consumption in smartphones and tablets, extending battery life. Its 4Gb density provides ample memory for multitasking and multimedia. The 96-ball FBGA package is compact, fitting space-constrained designs. With high bandwidth, it supports smooth UI and app performance.
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Embedded Systems
In embedded systems, the H5TC4G63CFR-xxJ provides high-density, low-power memory for industrial controllers and IoT gateways. Its 1.35V supply reduces heat and power budgets. The device supports auto-refresh and self-refresh, enabling efficient power management. The 256Mx16 organization simplifies interfacing with 16-bit microcontrollers.
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Networking Equipment
Routers and switches require high-bandwidth memory for packet buffering and forwarding tables. The H5TC4G63CFR-xxJ offers high data rates and low latency, essential for network performance. Its low voltage reduces power in always-on equipment. The device's on-die termination improves signal integrity in high-speed designs.
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Industrial Computing
Industrial PCs and HMI panels benefit from the H5TC4G63CFR-xxJ's reliability and wide temperature range. The device operates from 0°C to 95°C, suitable for harsh environments. Its 4Gb density supports complex applications like machine vision and process control. The low power consumption reduces cooling requirements in sealed enclosures.
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Consumer Electronics
In smart TVs and set-top boxes, the H5TC4G63CFR-xxJ provides high-speed memory for video processing and streaming. Its low voltage reduces power consumption, meeting energy efficiency standards. The 256Mx16 organization is ideal for 16-bit memory buses. The device's high bandwidth supports 4K video decoding and smooth user interfaces.
推薦
Automotive Infotainment
The H5TC4G63CFR-xxJ is used in automotive infotainment systems for navigation, audio, and connectivity. Its low power is critical for vehicle battery life. The device's wide temperature range supports automotive environments. The high density allows for complex maps and multimedia content. The 96-ball FBGA package is robust for automotive applications.
推薦
推薦產品摘要
工程參考資料，適用於 H5TC4G63CFR-xxJ — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5TC4G63CFR-xxA | H5TC4G63CFR-RDA | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Low voltage operation at 1.35V (對比Standard DDR3 (1.5V))
- High density 4Gb in 256Mx16 (對比2Gb DDR3L parts)
- RoHS and halogen-free compliance (對比Older DDR3 parts)
設計說明
Ensure stable 1.35V supply for VDD and VDDQ. Use low-ESR decoupling capacitors (0.1uF and 1uF) close to each power pin. The device requires a separate VREF for the command/address bus; generate it with a resistor divider and bypass capacitor.
Follow DDR3L layout guidelines: match trace lengths for DQ, DQS, and address/command signals to within 0.5mm. Maintain 50-ohm single-ended impedance for data lines and 100-ohm differential for clock and strobes. Use ground planes to minimize noise.
The device operates up to 95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature for your power dissipation.
合規資訊
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory components.
