Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
MPN： K4B4G1646E-BCNB ✓ 啟用中
1.35 V (1.283 V to 1.45 V) Vdss
96-ball FBGA Package
DDR3 SDRAM Memory
MOQ： 1 |
K4B4G1646E-BCNB 概覽
The Samsung K4B4G1646E-BCNB is a 4Gb DDR3 SDRAM organized as 256Mx16, operating at 1.35V (low voltage) with a data rate of 1866 Mbps. It is ideal for mobile and embedded applications requiring high bandwidth and low power consumption. The device is housed in a 96-ball FBGA package and is RoHS compliant.
直接替換替代品，適用於 K4B4G1646E-BCNB — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4B4G1646E-BCNB （相同外形與佔位） — 差異在於 Package, Memory Type, Operating Temperature, Supply Voltage, Burst Length.
Samsung Electronics
Package: 96-FBGA
Supply Voltage: 1.5 V (DDR3L variants 1.35 V)
比較對象 K4B4G1646E-BCNB →
Samsung Electronics
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Memory Type: DDR3L SDRAM
Operating Temperature: 0°C to +95°C (TC)
比較對象 K4B4G1646E-BCNB →
MT41K256M16TW-107
Micron Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · Parallel · 933 MHz (DDR3L-1866) · 20 ns · 1.35 V · 16 bit
聯絡詢價
查看資料表 →H5TQ4G63AFR-H9C
SK hynix
DDR3 SDRAM · 4 Gb · 256M x 16 · 1.5 V · 0.255 ns · 96-ball TFBGA · RECTANGULAR · 8192
聯絡詢價
查看資料表 →IS43TR16256A-15HBL-TR
ISSI, Integrated Silicon Solution Inc
DDR3 SDRAM · 4 Gbit · 256M x 16 · 667 MHz · 1333 Mbps · 20 ns · 1.5 V · 96-TWBGA (9x13 mm)
聯絡詢價
查看資料表 →W632GU6NB
Winbond DDR3 4Gb 256Mx16
📋 參考替代品（不在目錄中）
AS4C256M16D3L-12BCN
Alliance Memory
DDR3L SDRAM · 4 Gbit · 256M x 16 · 16 bit · 800 MHz · 1600 Mbps · 20 ns · 1.35 V
聯絡詢價
查看資料表 →K4B4G1646E-BCNB 最大額定值與電氣特性
| 記憶體類型 | DDR3 SDRAM |
| 記憶體容量 | 4 Gb |
| 組織 | 256M x 16 |
| 供應電壓 | 1.35 V (1.283 V to 1.45 V) |
| 資料速率 | 1866 Mbps |
| 工作溫度 | 0C to +95C |
| 封裝 | 96-ball FBGA |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant |
| 腳位數 | 96 |
| 介面類型 | Parallel |
| Refresh | 8K / 64 ms |
| Burst Length | 8, 4 (fixed) |
K4B4G1646E-BCNB 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data I/O 0 |
| 腳位 A3 | DQ1 — Data I/O 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data I/O 2 |
| 腳位 B3 | DQ3 — Data I/O 3 |
| 腳位 C1 | VDDQ — DQ power supply |
| 腳位 C2 | DQS0 — Data strobe 0 (positive) |
| 腳位 C3 | DQS0# — Data strobe 0 (negative) |
| 腳位 D1 | VSS — Ground |
| 腳位 D2 | CLK — Clock input |
| 腳位 D3 | CLK# — Complementary clock input |
| 腳位 E1 | CKE — Clock enable |
| 腳位 E2 | CS# — Chip select |
| 腳位 E3 | RAS# — Row address strobe |
| 腳位 F1 | CAS# — Column address strobe |
| 腳位 F2 | WE# — Write enable |
| 腳位 F3 | BA0 — Bank address 0 |
| 腳位 G1 | BA1 — Bank address 1 |
| 腳位 G2 | A0 — Address input 0 |
| 腳位 G3 | A1 — Address input 1 |
典型應用
K4B4G1646E-BCNB 適用於 6 應用s: Mobile Computing, Embedded Systems, Networking Equipment, Consumer Electronics, Automotive Infotainment, Industrial Automation.
Mobile Computing
Used in laptops and tablets for main memory with low power consumption.
Embedded Systems
Ideal for industrial single-board computers and IoT gateways.
Networking Equipment
Used in routers, switches, and network appliances for packet buffering.
Consumer Electronics
Found in smart TVs, set-top boxes, and gaming consoles.
Automotive Infotainment
Used in car infotainment systems and navigation units.
Industrial Automation
Deployed in PLCs and HMI panels for data logging and display.
What is the supply voltage range for K4B4G1646E-BCNB?
The supply voltage is 1.35V nominal, with a range of 1.283V to 1.45V for low-voltage DDR3 operation.
What is the maximum data rate of this DDR3 SDRAM?
The K4B4G1646E-BCNB supports a data rate of 1866 Mbps per pin.
What is the memory organization of K4B4G1646E-BCNB?
It is organized as 256M words x 16 bits, totaling 4 Gb.
What package does K4B4G1646E-BCNB come in?
It is housed in a 96-ball FBGA (Fine-pitch Ball Grid Array) package.
Is K4B4G1646E-BCNB RoHS compliant?
Yes, the device is RoHS compliant.
What is the operating temperature range?
The operating temperature range is 0°C to +95°C (case temperature).
Can K4B4G1646E-BCNB be used in mobile applications?
Yes, its low voltage (1.35V) and high density make it suitable for mobile and embedded applications.
What is the difference between DDR3 and DDR3L?
DDR3L operates at 1.35V, while standard DDR3 operates at 1.5V. K4B4G1646E-BCNB is a DDR3L device.
Does K4B4G1646E-BCNB support ECC?
No, this is a non-ECC memory. ECC versions are typically x72 organizations.
What is the burst length supported?
It supports burst lengths of 8 and 4 (fixed).
What is the refresh requirement?
It requires 8K refresh cycles every 64 ms.
Is K4B4G1646E-BCNB compatible with DDR3 sockets?
Yes, it is pin-compatible with standard DDR3 sockets, but voltage levels must match.
What is the typical power consumption?
[DATA_NEEDED: Typical power consumption] Please refer to the datasheet for detailed power numbers.
What is the part number suffix meaning?
The suffix 'E' indicates the generation, 'B' indicates package type (FBGA), 'CNB' indicates speed and temperature grade.
Where can I find the full datasheet?
The datasheet is available on Samsung's semiconductor website at the provided URL.
1 / 1