H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
Référence : H5TC4G63CFR-xxJ ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $5.9 | $5 900,00 |
H5TC4G63CFR-xxJ Présentation
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. DDR3L operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V), while maintaining compatibility with DDR3 signaling levels. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in laptops, servers, and embedded applications.
Key features include a 4Gb density, 16-bit I/O width, and support for various speed grades (e.g., -xxJ indicates a specific speed grade, likely 1600 Mbps or 1866 Mbps). The device uses a 96-ball FBGA package, which is standard for DDR3L SDRAM, ensuring compatibility with existing PCB designs. The operating temperature range is from 0°C to 95°C (case temperature), and it supports auto-refresh and self-refresh modes for power saving.
Technically, the H5TC4G63CFR-xxJ employs an 8n-prefetch architecture, which allows high-speed data transfer by fetching 8 data bits per clock cycle per I/O. It includes programmable CAS latency, burst length (8 and 4 with burst chop), and on-die termination (ODT) for signal integrity. The device also supports write leveling and read leveling for improved timing margins in high-speed systems.
Typical applications include main memory for laptops, ultrabooks, and embedded systems, as well as networking equipment like routers and switches, and industrial computing platforms. Its low voltage and high density make it suitable for power-constrained designs that require large memory capacity.
When designing with this component, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the DDR3L layout guidelines for signal integrity, including impedance matching and length matching for data and address lines. The device requires a stable 1.35V supply and a reference voltage (VREF) for the command/address bus.
Alternatives de remplacement direct pour H5TC4G63CFR-xxJ — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5TC4G63CFR-xxJ (même facteur de forme et même empreinte) — différant par Package, Density, Clock Frequency, Clock Input, Data Strobe.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5TC4G63CFR-xxA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5TC4G63CFR-RDA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5TC4G63CFR-RDAR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →MT41K256M16TW-107
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.1 / unité
Voir la fiche technique →H5TC4G63CFR-xxJ Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V + 0.100 / - 0.067V |
| Clock Input | Fully differential (CK, CK#) |
| Data Strobe | Differential (DQS, DQS#) |
| On-Chip DLL | Yes |
| DM Mask | Yes |
| Boîtier | 96-ball FBGA |
| Plage de température de fonctionnement | 0°C to 95°C (case) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
| Burst Length | 8 and 4 (with burst chop) |
| On-Die Termination | Yes |
| Refresh | Auto-refresh and self-refresh |
Configuration des broches de H5TC4G63CFR-xxJ
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQS — Data strobe (positive) |
| Broche C3 | DQS# — Data strobe (negative) |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | CK — Clock input (positive) |
| Broche D3 | CK# — Clock input (negative) |
| Broche E1 | CKE — Clock enable |
| Broche E2 | CS# — Chip select |
| Broche E3 | RAS# — Row address strobe |
| Broche F1 | CAS# — Column address strobe |
| Broche F2 | WE# — Write enable |
| Broche F3 | A0 — Address input 0 |
Applications typiques
H5TC4G63CFR-xxJ convient pour 6 applications: Mobile Devices, Embedded Systems, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment.
Mobile Devices
The H5TC4G63CFR-xxJ's low 1.35V operation reduces power consumption in smartphones and tablets, extending battery life. Its 4Gb density provides ample memory for multitasking and multimedia. The 96-ball FBGA package is compact, fitting space-constrained designs. With high bandwidth, it supports smooth UI and app performance.
Recommandé
Embedded Systems
In embedded systems, the H5TC4G63CFR-xxJ provides high-density, low-power memory for industrial controllers and IoT gateways. Its 1.35V supply reduces heat and power budgets. The device supports auto-refresh and self-refresh, enabling efficient power management. The 256Mx16 organization simplifies interfacing with 16-bit microcontrollers.
Recommandé
Networking Equipment
Routers and switches require high-bandwidth memory for packet buffering and forwarding tables. The H5TC4G63CFR-xxJ offers high data rates and low latency, essential for network performance. Its low voltage reduces power in always-on equipment. The device's on-die termination improves signal integrity in high-speed designs.
Recommandé
Industrial Computing
Industrial PCs and HMI panels benefit from the H5TC4G63CFR-xxJ's reliability and wide temperature range. The device operates from 0°C to 95°C, suitable for harsh environments. Its 4Gb density supports complex applications like machine vision and process control. The low power consumption reduces cooling requirements in sealed enclosures.
Recommandé
Consumer Electronics
In smart TVs and set-top boxes, the H5TC4G63CFR-xxJ provides high-speed memory for video processing and streaming. Its low voltage reduces power consumption, meeting energy efficiency standards. The 256Mx16 organization is ideal for 16-bit memory buses. The device's high bandwidth supports 4K video decoding and smooth user interfaces.
Recommandé
Automotive Infotainment
The H5TC4G63CFR-xxJ is used in automotive infotainment systems for navigation, audio, and connectivity. Its low power is critical for vehicle battery life. The device's wide temperature range supports automotive environments. The high density allows for complex maps and multimedia content. The 96-ball FBGA package is robust for automotive applications.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5TC4G63CFR-xxJ — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5TC4G63CFR-xxA | H5TC4G63CFR-RDA | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Low voltage operation at 1.35V (vs Standard DDR3 (1.5V))
- High density 4Gb in 256Mx16 (vs 2Gb DDR3L parts)
- RoHS and halogen-free compliance (vs Older DDR3 parts)
Notes de conception
Ensure stable 1.35V supply for VDD and VDDQ. Use low-ESR decoupling capacitors (0.1uF and 1uF) close to each power pin. The device requires a separate VREF for the command/address bus; generate it with a resistor divider and bypass capacitor.
Follow DDR3L layout guidelines: match trace lengths for DQ, DQS, and address/command signals to within 0.5mm. Maintain 50-ohm single-ended impedance for data lines and 100-ohm differential for clock and strobes. Use ground planes to minimize noise.
The device operates up to 95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature for your power dissipation.
Informations de conformité
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory components.
