IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon
MPN： IRF9540NSTRLPBF ✓ 啟用中IRF9540NSTRLPBF 概覽
An HEXFET power MOSFET is a specific Infineon (formerly International Rectifier) implementation of an enhancement-mode MOSFET optimized for power-switching applications. Power MOSFETs are a sub-category of discrete semiconductors belonging to the broader transistor family, and within the system hierarchy they sit between the control circuitry and the load they switch, providing a low-loss, fast-acting solid-state switch used in switch-mode power supplies, motor drives, and high-side/low-side converters. The P-Channel variant conducts when its gate is pulled below the source potential, which is particularly convenient for high-side switching because the gate drive is referenced to ground rather than to the load.
Key features of the IRF9540NSTRLPBF include 3.1 W power dissipation at Ta, 110 W power dissipation at Tc, fast switching speed, improved repetitive avalanche rating, and advanced process technology. The D2PAK surface-mount package is the SMD counterpart of the TO-220 and offers the same die in a footprint compatible with reflow soldering. This part ships in tape and reel packaging with a Pb-free, RoHS-compliant lead finish.
The architecture uses a HEXFET cell structure that minimizes on-resistance per unit silicon area and provides low gate charge for efficient, low-loss switching. The avalanche-rated design improves robustness when the body diode is forced to commutate inductive loads such as motor windings, solenoid coils, or transformers. The combination of low Rds(on) and modest gate charge makes this device suitable for medium-frequency switching converters up to a few hundred kHz.
Typical applications for the IRF9540NSTRLPBF include high-side load switches in 48 V telecom and industrial bus systems, P-channel reverse-polarity protection circuits, battery disconnect switches in UPS and solar charge controllers, DC motor speed-control H-bridges (as the high-side element), and synchronous-rectifier replacements where a simple P-channel switch is preferable to a controller-driven MOSFET. The 100 V rating provides ample headroom for nominal 48 V rails and 60 V transient spikes common in industrial environments.
When designing with this device, careful attention must be paid to gate-drive voltage. Because it is a P-Channel MOSFET, the gate must be pulled at least 10 V below the source to achieve full enhancement. Designers should also account for the body-diode forward drop when using it in reverse-polarity or synchronous-rectifier topologies, and should size the gate resistor to balance switching loss and ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the standalone manufacturer datasheet.
直接替換替代品，適用於 IRF9540NSTRLPBF — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IRF9540NSTRLPBF （相同外形與佔位） — 差異在於 Total Gate Charge (Qg), Package, Technology, Mounting Type, Continuous Drain Current (ID) at TC=25C.
IRF9540NSPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IRF9540NPBF
✅ 直接替換聯絡詢價
查看資料表 →IRF4905STRLPBF
✅ 直接替換聯絡詢價
查看資料表 →IRF5305PBF
✅ 直接替換聯絡詢價
查看資料表 →FQP27P06
✅ 直接替換📋 參考替代品（不在目錄中）
IRF9540NSTRLPBF 最大額定值與電氣特性
| Manufacturer | Infineon (formerly International Rectifier) |
| Product Type | Single P-Channel Power MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | -100 V |
| Continuous Drain Current (Id) | -23 A (at Tc) |
| On-Resistance (Rds(on)) | 117 mOhm max |
| Total Gate Charge (Qg) | 64.7 nC |
| Power Dissipation (Ta) | 3.1 W |
| Power Dissipation (Tc) | 110 W |
| 封裝 | D2PAK (TO-263), surface mount |
| 安裝類型 | Surface Mount |
| Technology | HEXFET, Advanced Process |
| Polarity | P-Channel |
| Operating Mode | Enhancement-mode |
| Avalanche Rated | Yes |
| Lead Finish | Pb-free, RoHS-compliant |
| Shipping Media | Tape and Reel (TR suffix) |
IRF9540NSTRLPBF 腳位配置
| 腳位 1 | Gate — Gate control input; pull below Source by Vgs(th)+ to turn on |
| 腳位 2 | Drain — Drain connection (also bonded to the metal tab) |
| 腳位 3 | Source — Source connection; reference for gate drive |
| 腳位 Tab | Drain — Metal mounting tab, electrically common with Drain (pin 2); provides thermal path to PCB |
安全工作區 (DC)
典型應用
IRF9540NSTRLPBF 適用於 7 應用s: High-Side Load Switch in 48V Industrial Systems, Reverse-Polarity Protection Circuit, DC Motor Drive H-Bridge High-Side Element, Battery Disconnect Switch in UPS Systems, Synchronous Rectifier Replacement, Power Supply Hot-Swap Controller, Audio Amplifier Output Stage Protection.
High-Side Load Switch in 48V Industrial Systems
The IRF9540NSTRLPBF is an excellent fit for high-side load switching in 48V industrial and telecom rails because its P-Channel construction allows ground-referenced gate drive without a charge pump or bootstrap circuit. With -100V Vdss rating it tolerates nominal 48V plus inductive transients, and the 117 mOhm Rds(on) keeps conduction loss manageable at typical 5-10A loads. Placed source-side to the load with gate driven by a small logic-level MOSFET or opto-isolated driver, the device provides clean, low-loss on/off control.
推薦
Reverse-Polarity Protection Circuit
The IRF9540NSTRLPBF is widely used in reverse-polarity protection circuits for battery-powered equipment. With its source connected to the load and gate tied to ground through a pull-down resistor, the MOSFET turns on during normal operation and self-biases off when input polarity reverses. The -100V Vdss rating handles automotive load-dump transients up to 60V, while the 117 mOhm Rds(on) adds only modest voltage drop. The avalanche-rated body diode also absorbs reverse inductive kickback.
推薦
DC Motor Drive H-Bridge High-Side Element
In H-bridge DC motor drive topologies, the IRF9540NSTRLPBF serves as the high-side switch on each leg, paired with an N-Channel MOSFET on the low side. Its P-Channel polarity simplifies high-side gate drive to a simple level-shifted logic signal, eliminating the need for bootstrap capacitors. The 23A continuous drain current comfortably handles fractional-horsepower motor loads, and the 110W Tc power dissipation rating allows sustained PWM operation with proper PCB thermal design.
推薦
Battery Disconnect Switch in UPS Systems
The IRF9540NSTRLPBF functions as a solid-state battery disconnect switch in UPS, solar charge controller, and e-bike battery management systems. With -100V Vdss and 23A Id, it handles 12V, 24V, and 48V battery stacks with substantial headroom. The low Rds(on) of 117 mOhm minimizes quiescent power loss, while the P-Channel configuration enables simple on/off control via a single low-side gate driver. The avalanche rating protects against inductive kickback from battery wiring inductance.
推薦
Synchronous Rectifier Replacement
In low-frequency synchronous rectifier or OR-ing diode applications, the IRF9540NSTRLPBF replaces a Schottky diode to dramatically reduce conduction loss. With 117 mOhm Rds(on), at 10A the part dissipates only 11.7W versus 60W for a typical 60V Schottky. The P-Channel polarity makes it natural for high-side OR-ing between redundant power supplies, with gate tied to the lower-voltage rail through a Zener-resistor network for self-driven operation.
推薦
Power Supply Hot-Swap Controller
The IRF9540NSTRLPBF serves as the pass element in -48V telecom hot-swap controllers, where its -100V Vdss rating and 23A Id handle the full power envelope of a typical -48V distribution rail. The P-Channel gate is driven by a hot-swap controller IC that ramps Vgs slowly to limit inrush current, while the part's avalanche rating absorbs the energy stored in PCB and cable inductance during hot-plug events. The 117 mOhm Rds(on) provides controlled foldback during current-limit conditions.
推薦
Audio Amplifier Output Stage Protection
In high-power audio amplifier designs, the IRF9540NSTRLPBF acts as a power supply rail switch that disconnects the load during fault conditions. The -100V rating suits amplifiers running on +/-50V rails, and the 23A continuous drain current handles peak musical transients. The avalanche-rated design absorbs back-EMF from speakers during DC-offset protection events, and the D2PAK package bolts to the amplifier chassis heatsink for shared thermal management.
推薦
推薦產品摘要
工程參考資料，適用於 IRF9540NSTRLPBF — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IRF9540NSPBF | IRF9540NPBF | IRF4905STRLPBF | IRF5305PBF | FQP27P06 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Vdss (V) | -100 V | -100 V | -100 V | -55 V | -55 V | -60 V |
| Continuous Drain Current (A) | -23 A (Tc) | -23 A | -23 A | -74 A | -31 A | -27 A |
| Rds(on) (mOhm) | 117 mOhm max | 117 mOhm | 117 mOhm | 20 mOhm (lower) | 60 mOhm | 70 mOhm |
| Total Gate Charge (nC) | 64.7 nC | 64.7 nC | 64.7 nC | 180 nC (higher) | 63 nC | 48 nC (lower) |
| Power Dissipation Tc (W) | 110 W | 110 W | 110 W | 200 W (higher) | 110 W | 120 W |
主要差異化特點
- P-Channel polarity simplifies high-side switching (對比IRF640NPBF (N-Channel equivalent))
- Higher Vdss rating for industrial rails (對比FQP27P06 (onsemi))
- Avalanche-rated for inductive switching (對比IRF5305PBF (lower-voltage variant))
- Mature, broad second-source availability (對比IRF9540STRLPBF (older generation))
設計說明
Estimated: The D2PAK package has typical junction-to-case thermal resistance (RthJC) of about 1.0 C/W, meaning 50W dissipation produces a 50C junction rise above the case. In free air, the part is limited to 3.1W (Ta), so for any continuous load above ~5A the metal tab MUST be soldered to a minimum 1 square inch of 2oz copper pour, or bolted to an external heatsink. Without this thermal management, the internal thermal shutdown will trip at high currents or the device will fail prematurely.
Because the D2PAK tab is internally bonded to the Drain (pin 2), the PCB copper pour under the tab doubles as both thermal relief and the drain electrical connection. Use a star-pattern or thermal-via array under the tab to spread heat into inner copper layers. Keep source and gate traces short and direct to minimize parasitic inductance that causes gate ringing and unintended turn-on during high dv/dt transitions.
The IRF9540NSTRLPBF is a P-Channel enhancement-mode MOSFET, so the gate must be pulled at least Vgs(th)+Vgs(plating) BELOW the source to fully enhance. At Vgs = -10V the device is fully on with the specified 117 mOhm Rds(on). For logic-level control, drive the gate from a small N-Channel MOSFET or a dedicated gate-driver IC capable of swinging rail-to-rail; a weak open-collector pull-up will leave the part in the linear region and cause excessive dissipation.
Do not exceed Vds = -100V, including transient spikes from inductive loads. Add a TVS diode or snubber across the drain-source if switching off inductive loads. Also, the body diode has a slow reverse recovery for a MOSFET and may need a parallel Schottky in high-frequency switching applications above 100 kHz. Always include a gate-source resistor (typically 10k-100k) to ensure the device defaults to off if the gate driver is disconnected.
合規資訊
Pb-free (PBF suffix) per Infineon product page; RoHS compliant; REACH compliant as of 2026-09-13; not AEC-Q100 qualified - automotive applications should use AEC-Q100 qualified parts
