IRF9540NSTRLPBF vs IRF4905STRLPBF 比較
詳細並排比較 IRF9540NSTRLPBF 由 Infineon 與 IRF4905STRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF9540NSTRLPBF | IRF4905STRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Product Type | Single P-Channel Power MOSFET (HEXFET) | — |
| Drain-Source Voltage (Vdss) | -100 V | — |
| Continuous Drain Current (Id) | -23 A (at Tc) | — |
| On-Resistance (Rds(on)) | 117 mOhm max | — |
| Total Gate Charge (Qg) | 64.7 nC | 120 nC |
| Power Dissipation (Ta) | 3.1 W | — |
| Power Dissipation (Tc) | 110 W | — |
| 封裝 | D2PAK (TO-263), surface mount | D2PAK (TO-263) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET, Advanced Process | HEXFET (Planar) |
| Polarity | P-Channel | — |
| Operating Mode | Enhancement-mode | — |
| Avalanche Rated | Yes | — |
| Lead Finish | Pb-free, RoHS-compliant | — |
| Shipping Media | Tape and Reel (TR suffix) | — |
| FET Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -74 A |
| Pulsed Drain Current (IDM) | — | -260 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) at VGS=-10V | — | 20 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| 工作溫度範圍 | — | -55C to +175C |
| MSL 等級 | — | 1 |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |