K3KL8L80DM-JGCT - 32Gb LPDDR5X DRAM FBGA-315 | Samsung
MPN： K3KL8L80DM-JGCT ✓ 啟用中K3KL8L80DM-JGCT 概覽
LPDDR5X (Low Power Double Data Rate 5X) is an enhanced, low-power SDRAM interface standard used as main memory in battery-powered and thermally constrained systems. Within the memory hierarchy it belongs to the DRAM family -> synchronous DRAM -> LPDDR -> LPDDR5X, and it differs from DDR5 server DRAM by optimizing power per bit transfer rather than peak channel density.
Key features include the 32 Gbit monolithic die density, an x32 data organization suited to mobile application processors, multi-rail operation (VDD1/VDD2/VDDQ at approximately 1.8 V, 1.05 V, 0.9 V and 0.5 V class rails per the LPDDR5X generation), and operation over -25 C to +85 C. The FBGA-315 package provides low-inductance ball interconnects for multi-gigabit signaling.
Architecturally, LPDDR5X builds on LPDDR5 with enhanced speed-binned operation, dynamic voltage scaling, deep sleep modes, and link ECC features that reduce refresh power and preserve data integrity in always-on AI workloads.
Typical applications are flagship smartphone and tablet main memory, on-device AI accelerators, automotive infotainment and ADAS domains, and compact PC/edge modules.
Design consideration: LPDDR5X signal integrity requires careful length-matched routing, on-die termination tuning, and controller training; verify the exact speed grade suffix against the JEDEC LPDDR5X-compatible controller spec before layout.
This page adds distributor availability signals, same-family drop-in alternatives, and design guidance synthesized beyond the raw Samsung datasheet.
直接替換替代品，適用於 K3KL8L80DM-JGCT — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K3KL8L80DM-JGCT （相同外形與佔位） — 差異在於 Density, Interface, Package, RoHS Status, Mounting Type.
K3KL8L80DM-MGCU
✅ 直接替換聯絡詢價
查看資料表 →K3KL8L80CM-MGCT
✅ 直接替換聯絡詢價
查看資料表 →K3KL8L80EM-MGCU
✅ 直接替換📋 參考替代品（不在目錄中）
K3KL9L90CM-MGCT
✅ 直接替換聯絡詢價
查看資料表 →K3KL7L70EM-MGCU
✅ 直接替換聯絡詢價
查看資料表 →K3KL8L80DM-JGCT 最大額定值與電氣特性
| Manufacturer | Samsung Electronics |
| Product Type | LPDDR5X SDRAM |
| Density | 32 Gbit (4 GB) |
| 組織 | x32 |
| 封裝 | FBGA-315 (315-ball BGA) |
| 資料速率 | Up to 7500 Mbps (family up to 8.5 Gbps) |
| 介面 | LPDDR5X (JEDEC LPDDR5-compatible, low-power SDRAM) |
| Supply Rails | 500 mV / 900 mV / 1.05 V / 1.8 V |
| 工作溫度 | -25C to +85C |
| Power Efficiency | ~20-25% improvement vs LPDDR5 (family figure) |
| 安裝類型 | Surface Mount (BGA) |
| Application Domains | Mobile, PC, automotive, on-device AI |
| RoHS 狀態 | Compliant |
K3KL8L80DM-JGCT fbga-315 (315-ball bga) 腳位配置指南
K3KL8L80DM-JGCT（fbga-315 (315-ball bga) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K3KL8L80DM-JGCT.
請參閱 資料表 以查看完整腳位配置。
典型應用
K3KL8L80DM-JGCT 適用於 6 應用s: Flagship Smartphone Main Memory, On-Device AI Inference, Automotive Infotainment and ADAS, Compact PC and Edge Computing Modules, Tablets and 2-in-1 Devices, Networking and Edge Server Accelerators.
Flagship Smartphone Main Memory
The K3KL8L80DM-JGCT's 32 Gbit x32 LPDDR5X configuration is a direct fit for flagship smartphone SoC main memory, where multi-gigabit bandwidth feeds CPU clusters, GPUs, and image signal processors. Its FBGA-315 package supports the compact stacking and PoP-style board strategies used in mobile layouts, while the LPDDR5X power envelope (0.5 V class VDDQ) directly extends battery life. Samsung's family data cites up to 8.5 Gbps and roughly 20-25% better efficiency than LPDDR5, which matters most during sustained camera burst capture and on-device model inference. Designers should co-train speed bins with the SoC controller and reserve thermal headroom near the PMIC for the 1.8 V and 1.05 V rails.
推薦
On-Device AI Inference
On-device AI workloads are memory-bandwidth bound, and the K3KL8L80DM-JGCT addresses this with up to 7,500 Mbps data rates and an x32 interface that maximizes per-package bandwidth in a single die. Samsung explicitly positions LPDDR5X for on-device AI, where the ~25% power-efficiency gain over LPDDR5 reduces thermal throttling during sustained transformer inference. The 4 GB per-die density supports quantized multi-billion-parameter models with headroom for the OS. In NPU-centric designs, place the die close to the SoC with length-matched DQ routing under strict skew budgets, and enable deep-sleep modes between inference bursts to exploit the LPDDR5X low-power states for idle-power reduction.
推薦
Automotive Infotainment and ADAS
Automotive cockpit and ADAS platforms use LPDDR5X for high-resolution displays, surround-view camera fusion, and navigation, and Samsung markets LPDDR5X for automotive devices. The documented -25 C to +85 C operating range on the same-die K3KL8L80CM variant covers most cabin and near-engine electronics environments. A 4 GB die per package enables stacked configurations for digital-cluster plus infotainment SoCs. For production, confirm the -JGCT ordering code carries the required automotive qualification level per Samsung's ordering table; infotainment is the typical entry application while safety domains may require Samsung's dedicated automotive LPDDR5X codes with full AEC-level validation.
推薦
Compact PC and Edge Computing Modules
Thin-and-light laptops, mini PCs, and SFF edge modules increasingly adopt LPDDR5X soldered memory for bandwidth and power gains over DDR4/DDR5 SODIMM designs. The K3KL8L80DM-JGCT's FBGA-315 surface-mount footprint lets board designers place 4 GB per die directly under or beside the SoC, freeing the mechanical envelope otherwise consumed by sockets and slots. With 7,500 Mbps-class operation, integrated GPUs gain bandwidth that directly lifts graphics and AI performance. Designers must commit to memory-on-board (no field upgrade), so qualify at least two same-footprint Samsung variants and implement comprehensive boot-time training coverage across process, voltage, and temperature corners.
推薦
Tablets and 2-in-1 Devices
Tablets balance peak performance against passive-cooling constraints, making the K3KL8L80DM-JGCT's efficiency profile valuable: 4 GB per die in x32 LPDDR5X at 0.5 V class VDDQ delivers desktop-class bandwidth without a fan. Multi-display multitasking, 120 Hz panels, and on-device photo/video processing all scale with memory bandwidth, which the LPDDR5X generation supplies via higher data rates rather than higher power. Its -25 C to +85 C range covers enclosed handheld environments. Layout should prioritize VDDQ plane integrity and dense decoupling near the ball field, and firmware should exploit per-bank refresh and self-refresh entry during idle periods to minimize standby drain.
推薦
Networking and Edge Server Accelerators
Edge gateways, 5G baseband cards, and inference accelerators at the network edge use LPDDR5X where DDR5 power budgets are too high. The K3KL8L80DM-JGCT supplies 4 GB of low-latency working memory per die, and multiple dies can be banked to scale capacity while keeping per-watt bandwidth high - Samsung cites up to 8.5 Gbps family operation and ~20% efficiency gain over LPDDR5. In fanless outdoor enclosures, the reduced heat load directly improves reliability. Route memory as point-to-point to the SoC, apply the controller's LPDDR5X training algorithms across temperature, and monitor die temperature via the device's temperature sensor features for adaptive throttling policy.
推薦
推薦產品摘要
工程參考資料，適用於 K3KL8L80DM-JGCT — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K3KL8L80DM-MGCU | K3KL8L80CM-MGCT | K3KL8L80EM-MGCU | K3KL9L90CM-MGCT |
|---|---|---|---|---|---|
| Package | FBGA-315 | FBGA-315 - same | FBGA-315 - same | FBGA-315 - same | FBGA-315 family - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 32 Gbit (4 GB) | 32 Gbit (4 GB) | 32 Gbit (4 GB) | 32 Gbit | 36 Gbit |
| Interface | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
主要差異化特點
- LPDDR5X power efficiency (對比LPDDR5-generation K3KL-family parts)
- Same-footprint second-source options (對比K3KL8L80DM-MGCU / K3KL8L80CM-MGCT)
- 32 Gbit monolithic density in x32 organization (對比K3KL7L70EM-MGCU (lower density family member))
設計說明
At LPDDR5X data rates (7,500 Mbps class), DQ/CA routing requires length matching with skew budgets of only a few picoseconds, controlled-impedance traces (40-60 ohm), and unbroken reference planes under every signal group. Follow the SoC memory controller vendor's LPDDR5X routing guideline for fly-by clock and CA topology. Estimated: at these edge rates even a 5 mm stub can degrade eye margins, so avoid via stubs on DQ lines or back-drill where necessary.
The device uses multiple rails (500 mV / 900 mV / 1.05 V / 1.8 V classes per Samsung family data). Sequence VDD1/VDD2 before VDDQ per the LPDDR5X power-up procedure and use PMIC rails with fast transient response for VDDQ, since refresh and read bursts create high di/dt. Estimated: a 4 GB die at full bandwidth can draw several hundred milliamps on VDDQ with sub-microsecond transients, demanding low-ESL decoupling and nearby bulk capacitance. Verify rail sequencing order in the controller's power-up checklist.
Do not substitute speed-grade suffixes without verifying controller training coverage: LPDDR5X controllers qualify specific speed bins at boot, and a C/D/E binning difference within the K3KL8L80 family (e.g., K3KL8L80CM-MGCT vs -DM-JGCT) can exceed a validated operating point. Also confirm the ordering-code decode with Samsung's official ordering-information table rather than broker descriptions, as third-party listings frequently conflate suffix letters.
合規資訊
ROHS compliance stated in distributor listing (JLCPCB for same-die variant K3KL8L80CM-MGCT). REACH, halogen-free and conflict-minerals declarations not present in retrieved data - obtain from Samsung environmental documentation.
