K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V | Samsung
MPN： K4RAH165VB-BCWM ✓ 啟用中| 數量 | 單價 | 小計 |
|---|---|---|
| 1 | $19.6875 | $19.69 |
| 10 | $14.2188 | $142.19 |
| 100 | $12.5781 | $1,257.81 |
| 500 | $12.0313 | $6,015.65 |
| 1,000 | $11.4844 | $11,484.40 |
K4RAH165VB-BCWM 概覽
DDR5 SDRAM is the fifth generation of double data rate synchronous dynamic random-access memory, a volatile memory technology used as main memory in computing systems. Within the memory hierarchy, DRAM sits between CPU caches and non-volatile storage, and DDR5 succeeds DDR4 with higher bandwidth, lower operating voltage, on-die ECC, and improved power management via the onboard PMIC architecture.
Key features of the K4RAH165VB-BCWM include 16Gb density per component, a x16 data interface, 1.1V operation delivering roughly 30% better power efficiency than DDR4 (per Samsung's DDR5 family documentation), and DDR5-standard functions confirmed for family parts in web data: auto self-refresh, asynchronous reset, on-chip error correction code (ECC), write leveling, CRC, and ZQ calibration. DLL-enabled mode operation is covered by the component datasheet timing specifications.
The DDR5 architecture splits each component into two independent channels, improving effective concurrency for data-intensive workloads, while on-die ECC corrects internal bit errors without host overhead. The x16 organization suits client, mobile, and embedded designs that use fewer components per system compared to x8 server configurations.
Typical applications include data-center memory modules where long-term availability is required, high-performance computing, industrial systems, and data-intensive consumer electronics such as tablets and mobile devices.
A key design consideration: DDR5 components require compliant controller training (write leveling, DFE/Read training) and strict fly-by routing with VDDQ termination; the asynchronous reset pin simplifies initialization sequencing relative to DDR4.
This page synthesizes distributor pricing, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet, as of 2026-09-04.
直接替換替代品，適用於 K4RAH165VB-BCWM — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
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K4RAH165VB-BCQK
聯絡詢價
查看資料表 →K4RAH165VB-BIWM
聯絡詢價
查看資料表 →K4RAH165VB-BIQK
聯絡詢價
查看資料表 →K4RAH165VP-BCWM
✓ 有庫存
$24.6094 / 單位
查看資料表 →K4RHE165VB-BCWM
聯絡詢價
查看資料表 →K4RAH086VB-BCWM
✗ 缺貨
$44.5455 / 單位
查看資料表 →K4RAH086VB-BCQK
✓ 有庫存
$41.0156 / 單位
查看資料表 →K4RAH165VB-BCWM 最大額定值與電氣特性
| 記憶體類型 | DDR5 SDRAM |
| 記憶體容量 | 16 Gb |
| Memory Organization | 1G x 16 |
| Memory Interface | Parallel |
| 供應電壓 | 1.1 V |
| Max Data Rate (family) | up to 7200 Mbps |
| 工作溫度 | 0C to +85C |
| 封裝 | FBGA-106 |
| 安裝類型 | Surface Mount |
| On-die ECC | Yes (DDR5 standard, per family data) |
| Self Refresh | Auto self-refresh |
| Asynchronous Reset | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| RoHS 狀態 | Compliant |
| Packaging | Tray |
| 生命週期狀態 | Active |
K4RAH165VB-BCWM fbga-106 腳位配置指南
K4RAH165VB-BCWM（fbga-106 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K4RAH165VB-BCWM.
請參閱 資料表 以查看完整腳位配置。
典型應用
K4RAH165VB-BCWM 適用於 6 應用s: Data Center Server Memory, High-Performance Computing (HPC), Industrial Control Systems, Mobile and Tablet Devices, Embedded and Edge Computing, Test and Measurement / Memory Prototyping.
Data Center Server Memory
The K4RAH165VB-BCWM's 16Gb density and DDR5 bandwidth make it a strong fit for data-center memory subsystems where Samsung DDR5 is widely deployed for long-term availability. Its 1.1V operation cuts per-bit power versus DDR4 - Samsung cites roughly 30% better power efficiency across the DDR5 family - which directly reduces cooling cost in dense server racks. On-die ECC corrects internal single-bit errors transparently, improving reliability at advanced process nodes. The x16 organization suits capacity-optimized modules and client-server UDIMMs, while on-die PMIC partitioning (DDR5 architecture) improves supply integrity per channel.
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High-Performance Computing (HPC)
For HPC clusters, the K4RAH165VB-BCWM provides the bandwidth foundation of DDR5 - family data rates up to 7,200 Mbps - and the DDR5 dual independent channels per component raise effective concurrency for data-intensive workloads such as simulation and analytics. The 16Gb per-component density enables high-capacity memory node designs with fewer devices per board, improving yield and reducing assembly cost. CRC and write leveling functions maintain signal integrity at high bus speeds, while ZQ calibration keeps output impedance accurate over temperature for stable multi-drop routing.
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Industrial Control Systems
Industrial systems that require long-term DRAM availability deploy the K4RAH165VB-BCWM, as web sources specifically note Samsung DDR5 usage in industrial systems where extended supply continuity matters. The asynchronous reset function simplifies power-event recovery in electrically noisy factory environments, and auto self-refresh preserves memory contents during low-power states in always-on controllers. For extended-temperature deployments, the pin-identical K4RAH165VB-BIWM industrial-bin variant can be specified on the same FBGA-106 footprint without PCB redesign, protecting long-term sourcing.
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Mobile and Tablet Devices
Distributor listings (Octopart, Wolfchip) identify this Samsung DDR5 DRAM portfolio as designed for mobile devices, tablets, and consumer electronics. The K4RAH165VB-BCWM's 1.1V supply and DDR5's improved power efficiency extend battery life in portable products, while 16Gb per component allows thin devices to reach multi-GB memory with minimal board area using the compact FBGA-106 package. The x16 organization reduces required component count versus x8 designs - a single x16 device provides a full 16-bit channel half, simplifying layout for narrow-channel mobile platforms.
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Embedded and Edge Computing
Edge computing platforms benefit from the K4RAH165VB-BCWM's combination of density and efficiency: 16Gb per component at 1.1V supports AI inference and video analytics workloads within constrained thermal envelopes. DDR5's on-die ECC improves unattended reliability - critical for remote edge nodes without field service. The asynchronous reset pin enables deterministic recovery after brown-out events common in distributed power environments, and ZQ calibration maintains signal integrity across wide ambient temperature swings encountered in outdoor enclosures.
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Test and Measurement / Memory Prototyping
DDR5 controller and platform validation labs use individual K4RAH165VB-BCWM components on characterization boards to verify training algorithms - write leveling, Read training, and ZQ calibration - before module-level integration. The component datasheet specifies DLL-enabled mode timings, making the part a deterministic reference device for eye-diagram and Vcent_CA measurement work. Tray packaging suits socket-based test setups, and the availability of multiple speed grades (BCWM, BCQK, BIWM) on the same footprint lets labs sweep timing corners without changing hardware.
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推薦產品摘要
工程參考資料，適用於 K4RAH165VB-BCWM — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4RAH165VB-BCQK | K4RAH165VB-BIWM | K4RHE165VB-BCWM | K4RAH086VB-BCWM |
|---|---|---|---|---|---|
| Package | FBGA-106 | FBGA-106 - same | FBGA-106 - same | FBGA-106 - same | FBGA-106 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 8 Gb |
| Technology | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Operating Temperature | 0C to +85C (commercial) | 0C to +85C | Industrial bin (extended) | 0C to +85C | 0C to +85C |
| Lifecycle Status | Active | Active | Active | Active | Active |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Double the density of 8Gb family parts (對比K4RAH086VB-BCWM)
- Same die as BCQK with different speed bin (對比K4RAH165VB-BCQK)
- Industrial temperature bin option (對比K4RAH165VB-BIWM)
- DDR5 generation efficiency over DDR4 K4AAG family (對比K4AAG165WM-BCWE)
設計說明
DDR5 fly-by routing requires controlled impedance (typically 40 ohm for data groups per platform design guides) and per-byte DDR5 data mask behavior differs from DDR4. Match trace lengths within data groups and reference the DQ/DQS signals to a solid VDDQ plane. Because the K4RAH165VB-BCWM is a x16 component, the data bus is 16 bits wide per device - plan DQS pair routing for both bytes. Re-run controller training (write leveling, Read training) after any layout change; training parameters do not transfer across PCB revisions.
Operate the K4RAH165VB-BCWM from a regulated 1.1V VDD rail per the DDR5 standard. Estimated: at 16Gb device typical active currents in the hundreds of mA range, decouple with bulk 47-100 uF plus multiple 0.1 uF/0.01 uF ceramics per device. DDR5 platforms commonly use a dedicated PMIC (5V to 1.1V step-down); budget ripple below the datasheet VDD tolerance or eye margins will degrade. Verify actual current against the Samsung component datasheet for your operating frequency point.
Do not assume DDR4 and DDR5 components are interchangeable - the K4RAH165VB-BCWM (DDR5) will not operate on a DDR4 controller regardless of footprint similarity; also never mix the commercial BCWM grade into designs qualified with the industrial BIWM bin without re-qualification. ZQ calibration requires an external precision resistor (typically 240 ohm 1%) routed cleanly to ZQ pin - omitting it causes drive-strength errors. Asynchronous reset must be asserted during power ramp per DDR5 initialization sequence, or the device may not respond to MRR/MRW commands.
合規資訊
RoHS compliance confirmed via JLCPCB listing (FBGA-106 DDR SDRAM ROHS). REACH, lead-free, halogen-free, and conflict-minerals status not stated in provided data.
