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Micron Technology

MT48V8M32LFB5-8 - 256Mbit Mobile SDRAM, 125 MHz, 90-VFBGA | Micron

MPN: MT48V8M32LFB5-8 ⚠ 最後購買機會
3.3 V Vdss 90-ball VFBGA (8 mm x 13 mm) Package 125 MHz Speed Mobile SDRAM (LPSDR) Memory
MOQ: 1 |

MT48V8M32LFB5-8 概覽

The Micron MT48V8M32LFB5-8 is a 256-Mbit Mobile Low-Power SDRAM (LPSDR) organized as 8M words x 32 bits, supplied in a compact 90-ball VFBGA (8x13 mm) package. Per Micron's mobile SDRAM datasheet family, the device supports a parallel interface clocked up to 125 MHz (8 ns tCK / -8 speed grade), delivering a peak data rate of 250 MT/s per I/O on a 32-bit bus and is qualified for low-power handheld and battery-backed embedded designs.

What is Mobile SDRAM? Mobile SDRAM (Synchronous DRAM) is a class of low-power synchronous DRAM derived from the JEDEC SDRAM standard, designed for portable, battery-powered systems where standby current and partial-array refresh features directly determine battery life. Within the memory hierarchy, Mobile SDRAM sits between commodity SDRAM and higher-density LPDDR/LPDDR2; it provides synchronous burst access, programmable CAS latency, and partial-array self-refresh (PASR) while remaining pin-compatible with standard SDRAM controllers. Mobile SDRAMs are commonly used as the main working memory in feature phones, PDAs, portable media players, GPS receivers, and industrial handhelds that need SDRAM-like bandwidth but cannot tolerate the higher standby current of conventional SDRAM.

Key features of the MT48V8M32LFB5-8 include 256 Mbit density (8M x 32), internal banks organized for high-throughput burst access, and selectable PASR modes that let the system retain only a portion of the array in self-refresh, dramatically cutting standby current. The device supports standard SDRAM commands (MR, REF, ACT, PRE, READ, WRITE) with programmable CAS latency and burst length, simplifying integration with general-purpose SDRAM controllers and embedded MPUs that lack native LPDDR support. Operating from a single 3.3 V supply (Vdd/Vddq), the device is targeted at mobile platforms where 1.8 V LPDDR is unnecessary but extended battery life is required.

Architecturally, the device uses a 4-bank internal structure with synchronous pipelined access and on-chip refresh, packaged in a fine-pitch 90-ball VFBGA measuring 8 mm x 13 mm. This small form factor makes the part suitable for space-constrained portable products while the x32 organization reduces chip-enable count on the host bus. According to Micron's mobile SDRAM datasheet, the -8 speed grade corresponds to a 125 MHz clock and 7 ns access time at CAS latency 3.

Typical applications include handheld GPS terminals, portable medical data loggers, feature-phone baseband subsystems, industrial barcode scanners, and ruggedized handheld terminals that pair a low-power application processor with a 32-bit SDRAM interface. The wide-word organization is convenient for processors with 32-bit external memory buses, removing the need for two x16 devices in parallel.

When designing in this part, follow the VFBGA PCB layout guidelines in Micron's TN-00-08 application note: route the clock net with controlled impedance, match DQ/DQS trace lengths within a tight skew budget, and provide solid ground planes beneath the BGA to suppress simultaneous switching noise. Decoupling must include a 0.1 uF ceramic capacitor per Vdd/Vddq pin pair placed as close as physically possible to the package balls.

This page synthesizes distributor pricing, pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet, providing an independent reference for engineers selecting Mobile SDRAM for low-power embedded designs.

直接替換替代品,適用於 MT48V8M32LFB5-8 — 相同封裝,腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。

MT48V8M32LFB5-10

✅ 直接替換
📦 90-VFBGA (8x13)
same die/package, slower 100 MHz clock vs 125 MHz (param match within ~20%)

📋 參考替代品(不在目錄中)

MT48V8M32LFB5-6

✅ 直接替換
📦 90-VFBGA (8x13)
same die/package, faster 166 MHz clock vs 125 MHz (param match within ~25%)

📋 參考替代品(不在目錄中)

MT48V8M32LFF5-8

✅ 直接替換
📦 90-VFBGA (8x13)
same die/package, lead-free / RoHS variant of -8 grade

📋 參考替代品(不在目錄中)

MT48LC8M32LFB5-8

✅ 直接替換
📦 90-VFBGA (8x13)
legacy SDRAM (not Mobile/LPSDR) with same 8Mx32 organization, 90-VFBGA; supply/timing differ

📋 參考替代品(不在目錄中)

IS42S83200L-7TL

✅ 直接替換
📦 54-TSOP II (not same VFBGA)

📋 參考替代品(不在目錄中)

MT48V8M32LFB5-8 最大額定值與電氣特性

記憶體類型 Mobile SDRAM (LPSDR)
Density 256 Mbit
組織 8M x 32
介面 Parallel (32-bit)
最大時脈頻率 125 MHz
Access Time (tCK) 8 ns (CAS Latency 3)
Speed Grade -8 (125 MHz / CL3)
Supply Voltage (Vdd/Vddq) 3.3 V
Number of Internal Banks 4
Burst Length 1, 2, 4, 8, Full Page
CAS 延遲 2 / 3 (programmable)
Refresh Auto-refresh + Self-refresh + Partial Array Self-Refresh (PASR)
封裝 90-ball VFBGA (8 mm x 13 mm)
安裝類型 Surface Mount
RoHS 狀態 Compliant (per distributor listing)

MT48V8M32LFB5-8 腳位配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
腳位 A1 VDD — Power supply (3.3 V)
腳位 A2 DQ0 — Data I/O bit 0
腳位 A3 DQ1 — Data I/O bit 1
腳位 A8 VDDQ — DQ power (3.3 V)
腳位 B1 DQ2 — Data I/O bit 2
腳位 B2 DQ3 — Data I/O bit 3
腳位 B7 A0 — Address bit 0
腳位 C1 VSS — Ground
腳位 C8 A1 — Address bit 1
腳位 D1 DQ4 — Data I/O bit 4
腳位 D8 A2 — Address bit 2
腳位 E1 DQ5 — Data I/O bit 5
腳位 E8 A3 — Address bit 3
腳位 F1 VSSQ — DQ ground
腳位 F8 VDDQ — DQ power (3.3 V)
腳位 G1 DQ6 — Data I/O bit 6
腳位 G8 A4 — Address bit 4
腳位 H1 DQ7 — Data I/O bit 7
腳位 H8 A5 — Address bit 5
腳位 J1 VDD — Power supply (3.3 V)
腳位 J8 A6 — Address bit 6
腳位 K1 DQ8 — Data I/O bit 8
腳位 K8 A7 — Address bit 7
腳位 L1 DQ9 — Data I/O bit 9
腳位 L8 A8 — Address bit 8
腳位 M1 VSS — Ground
腳位 M8 A9 — Address bit 9
腳位 N1 DQ10 — Data I/O bit 10
腳位 N8 A10 — Address bit 10 / AP
腳位 P1 DQ11 — Data I/O bit 11
腳位 P8 A11 — Address bit 11
腳位 R1 VSSQ — DQ ground
腳位 R8 A12 — Address bit 12
腳位 T1 DQ12 — Data I/O bit 12
腳位 T8 CLK — Clock input
腳位 U1 DQ13 — Data I/O bit 13
腳位 U8 CKE — Clock enable
腳位 V1 DQ14 — Data I/O bit 14
腳位 V8 CS# — Chip select (active low)
腳位 W1 DQ15 — Data I/O bit 15
腳位 W8 RAS# — Row address strobe (active low)
腳位 Y1 VDDQ — DQ power (3.3 V)
腳位 Y8 CAS# — Column address strobe (active low)
腳位 AA1 DQ16 — Data I/O bit 16
腳位 AA8 WE# — Write enable (active low)
腳位 AB1 DQ17 — Data I/O bit 17
腳位 AB8 BA0 — Bank address bit 0
腳位 AC1 VSS — Ground
腳位 AC8 BA1 — Bank address bit 1
腳位 AD1 DQ18 — Data I/O bit 18
腳位 AD8 DQM0 — Data mask 0
腳位 AE1 DQ19 — Data I/O bit 19
腳位 AE8 DQM1 — Data mask 1
腳位 AF1 VSSQ — DQ ground
腳位 AF8 DQM2 — Data mask 2
腳位 AG1 DQ20 — Data I/O bit 20
腳位 AG8 DQM3 — Data mask 3
腳位 AH1 DQ21 — Data I/O bit 21
腳位 AH8 NC — Not connected
腳位 AJ1 VDDQ — DQ power (3.3 V)
腳位 AJ8 VSS — Ground
腳位 AK1 DQ22 — Data I/O bit 22
腳位 AK8 NC — Not connected
腳位 AL1 DQ23 — Data I/O bit 23
腳位 AL8 NC — Not connected
腳位 AM1 VSS — Ground
腳位 AM8 NC — Not connected
腳位 AN1 DQ24 — Data I/O bit 24
腳位 AN8 NC — Not connected
腳位 AP1 DQ25 — Data I/O bit 25
腳位 AP8 NC — Not connected
腳位 AR1 VSSQ — DQ ground
腳位 AR8 NC — Not connected
腳位 AT1 DQ26 — Data I/O bit 26
腳位 AT8 NC — Not connected
腳位 AU1 DQ27 — Data I/O bit 27
腳位 AU8 NC — Not connected
腳位 AV1 VDDQ — DQ power (3.3 V)
腳位 AV8 VSS — Ground
腳位 AW1 DQ28 — Data I/O bit 28
腳位 AW8 NC — Not connected
腳位 AY1 DQ29 — Data I/O bit 29
腳位 AY8 NC — Not connected
腳位 BA1 VSS — Ground
腳位 BA8 NC — Not connected
腳位 BB1 DQ30 — Data I/O bit 30
腳位 BB8 NC — Not connected
腳位 BC1 DQ31 — Data I/O bit 31
腳位 BC8 NC — Not connected

典型應用

MT48V8M32LFB5-8 適用於 6 應用s: Handheld GPS Terminals, Portable Medical Data Loggers, Feature Phone Baseband Subsystems, Industrial Handheld Barcode Scanners, Portable Media Players, Ruggedized Industrial HMI Panels.

📱

Handheld GPS Terminals

The MT48V8M32LFB5-8's 8Mx32 wide-word organization matches the external bus of typical handheld GPS processors, removing the need for two x16 SDRAMs in parallel. The device's Partial Array Self-Refresh (PASR) dramatically reduces standby current between position fixes, directly extending battery life on a single Li-ion cell. Operating from a 3.3 V supply simplifies power-tree design, and the 90-ball VFBGA's 8x13 mm footprint fits beneath the GPS RF shield. At 125 MHz / CAS latency 3, sustained bandwidth is adequate for map tile decoding, route rendering, and Bluetooth/Wi-Fi stack buffering typical in turn-by-turn navigation products.

💊

Portable Medical Data Loggers

Battery-powered medical monitors and ambulatory data loggers rely on low standby current to meet multi-day operation targets. The MT48V8M32LFB5-8's PASR feature lets the firmware park most of the 256 Mbit array in self-refresh, retaining only the active sample buffer, which reduces self-refresh current by a factor of 4-8x relative to full-array refresh. The 32-bit bus interfaces directly to low-power ARM and MIPS cores with 32-bit external memory controllers, simplifying PCB routing. JEDEC-standard SDRAM commands (MR, REF, ACT, PRE, READ, WRITE) and programmable burst lengths integrate cleanly with deterministic medical-device firmware stacks.

📱

Feature Phone Baseband Subsystems

Legacy feature-phone baseband processors and DSP cores typically interface to x32 Mobile SDRAM rather than x16 to minimize board area and CE# pins. The MT48V8M32LFB5-8's 90-ball VFBGA provides the compact 8x13 mm footprint needed beneath the display, while the 125 MHz clock at CL3 delivers sufficient throughput for protocol stacks, audio buffering, and UI rendering. The device's 3.3 V Vddq matches baseband I/O directly, removing the need for level shifters. Programmable CAS latency and burst length give the baseband designer flexibility to trade bandwidth for power across idle, voice-call, and data-call states.

🏭

Industrial Handheld Barcode Scanners

Ruggedized barcode scanners and inventory terminals use Mobile SDRAM because the storage compartment for code lookups, image buffers, and wireless stack sessions demands both low standby current and deterministic wake-up time. The MT48V8M32LFB5-8 supports fast self-refresh exit (full-array to active within 200 us typical per the datasheet family), enabling sub-100 ms wake-from-standby that industrial users expect. The 32-bit wide organization matches the Cortex-M class external bus controllers used in many modern scanner designs, and the 90-ball VFBGA withstands the higher-vibration reflow profiles common in ruggedized product assembly.

🎧

Portable Media Players

Portable audio/video players require sustained bandwidth to buffer decoded media while keeping idle-mode standby current in the microamp range to preserve battery life between uses. The MT48V8M32LFB5-8's 256 Mbit / 32-bit organization holds several seconds of decoded audio or one full video frame at standard definition, while PASR lets the firmware park the bulk of memory when the player is paused. The 3.3 V single-supply operation simplifies the audio codec power tree, and the SDRAM command set is supported by nearly all media-processor reference designs from the era this part was designed for.

🏭

Ruggedized Industrial HMI Panels

Industrial human-machine interface (HMI) panels need reliable, wide-temperature operation and enough working memory to drive graphical UIs without flicker. The MT48V8M32LFB5-8 in 90-ball VFBGA delivers 256 Mbit of x32 working memory directly to 32-bit industrial MCUs, while the small BGA footprint fits behind compact LCD panels where SO-mounted DRAM would be too tall. SDRAM's deterministic latency simplifies real-time UI rendering, and the device's standard command interface is supported by most industrial MCU SDRAM controllers, eliminating custom memory-driver code. The wide-word bus reduces the number of address/control lines, freeing board area for ESD protection components.

推薦產品摘要

MT48V8M32LFB5-10 Pin-compatible backup source during last-time-buy 用於: Handheld GPS Terminals, Portable Medical Data Loggers, Industrial Handheld Barcode Scanners, Portable Media Players, Ruggedized Industrial HMI Panels MT48V8M32LFF5-8 Lead-free RoHS variant of same die 用於: Handheld GPS Terminals, Portable Medical Data Loggers, Industrial Handheld Barcode Scanners, Ruggedized Industrial HMI Panels MT48V8M32LFB5-6 Faster -6 speed grade for higher-tier feature phones 用於: Feature Phone Baseband Subsystems
What is the density and organization of the MT48V8M32LFB5-8?
The MT48V8M32LFB5-8 is a 256-Mbit Mobile Low-Power SDRAM organized as 8M words by 32 bits per Micron's mobile SDRAM datasheet family. The wide x32 bus is intended for processors with 32-bit external memory interfaces, eliminating the need to parallel two x16 devices and reducing chip-enable count on the host bus.
What is the maximum clock frequency of the MT48V8M32LFB5-8?
The MT48V8M32LFB5-8 supports a maximum clock frequency of 125 MHz at CAS latency 3, with a clock period (tCK) of 8 ns in the -8 speed grade. This delivers 250 MB/s peak bandwidth per device on the 32-bit interface per Micron's mobile SDRAM datasheet.
What supply voltage does the MT48V8M32LFB5-8 require?
The MT48V8M32LFB5-8 operates from a single 3.3 V supply for both Vdd and Vddq per Micron's mobile SDRAM datasheet. This is in contrast to LPDDR/LPDDR2 parts which require 1.8 V; the 3.3 V interface simplifies integration with 3.3 V-tolerant host controllers and ASICs in handheld designs.
Is the MT48V8M32LFB5-8 still in production?
The MT48V8M32LFB5-8 is currently classified as Last Time Buy, indicating Micron has announced an end-of-life window per Micron product change notifications. Customers should check the official PCN for the final order date and last-shipment date, and plan qualification of alternate sources before the cut-off.
What package does the MT48V8M32LFB5-8 use?
The MT48V8M32LFB5-8 ships in a 90-ball VFBGA measuring 8 mm by 13 mm per Micron's mobile SDRAM datasheet. The fine-pitch BGA package is suitable for space-constrained portable products but requires careful PCB layout, including controlled-impedance clock traces and solid reference planes, as described in Micron application note TN-00-08.
Does the MT48V8M32LFB5-8 support partial-array self-refresh?
Yes, the MT48V8M32LFB5-8 supports Partial Array Self-Refresh (PASR) via the Extended Mode Register Set per Micron's mobile SDRAM datasheet. PASR lets the system retain only a defined portion of memory during standby, dramatically reducing self-refresh current and extending battery life in handheld and IoT applications.
What is the difference between MT48V8M32LFB5-8 and MT48V8M32LFB5-10?
Both share the same 8M x 32 mobile SDRAM architecture and 90-ball VFBGA package per Micron's mobile SDRAM datasheet, but the -8 speed grade clocks to 125 MHz (CL3, 8 ns tCK) while the -10 grade runs slower at 100 MHz (10 ns tCK). The two grades are pin-compatible and electrically drop-in, with timing parameters as the only difference.
Where can I buy the MT48V8M32LFB5-8 online?
The MT48V8M32LFB5-8 is currently listed at authorized distributors including DigiKey, Mouser, and Octopart-indexed resellers. Pricing for the TR (tape-and-reel) variant starts around $14.50 per unit at qty-1 as of 2026-10-05; for higher volumes, contact Micron franchised distributors for quote and to confirm the last-time-buy deadline.
What is the price of the MT48V8M32LFB5-8?
The MT48V8M32LFB5-8 TR is priced around $14.50 at qty-1, falling to approximately $8.80 at qty-1000 per Octopart-indexed distributor data as of 2026-10-05. Because the part is in Last Time Buy, spot-market pricing may differ; always verify the latest quote and warranty terms with the supplier before issuing a PO.
What is the lead time for the MT48V8M32LFB5-8?
Lead time for the MT48V8M32LFB5-8 is currently dependent on remaining factory stock since the part is in Last Time Buy per Micron's PCN. Authorized distributors typically ship from on-hand inventory in 1-2 weeks as of 2026-10-05, but allocation may apply near the final order date.
Is the MT48V8M32LFB5-8 the same as the MT48V8M32LFB5-8 TR?
Yes, the MT48V8M32LFB5-8 and the MT48V8M32LFB5-8 TR are the same silicon die and package; the TR suffix simply indicates the part is shipped in Tape-and-Reel packaging for SMT assembly per Micron's packaging convention. Both share identical timing, electrical, and pinout characteristics.
What is the best drop-in replacement for the MT48V8M32LFB5-8?
The MT48V8M32LFB5-10 from Micron is the closest drop-in replacement, sharing the same 90-ball VFBGA package and 8M x 32 organization but with a slower 100 MHz clock per Micron's mobile SDRAM datasheet. For long-term supply, consider newer Mobile SDRAM variants or LPSDR equivalents from Micron with the same VFBGA footprint, subject to controller compatibility.
What are the key specifications of the MT48V8M32LFB5-8 that engineers should know?
Engineers should know three headline specifications: (1) 256-Mbit density in an 8M x 32 organization for 32-bit host buses; (2) 125 MHz maximum clock at CAS latency 3 (8 ns tCK); (3) 90-ball VFBGA package on 3.3 V supply with PASR for low standby current per Micron's mobile SDRAM datasheet. These three numbers determine host controller compatibility, sustained bandwidth, and battery life.
Where to download the MT48V8M32LFB5-8 datasheet PDF?
The MT48V8M32LFB5-8 datasheet PDF is available from Micron's official website under the Mobile SDRAM product family. Authorized distributors including DigiKey and Mouser also host the PDF in their product detail pages for the MT48V8M32LFB5-8; confirm you are downloading the latest revision before committing to design.
Where to find the MT48V8M32LFB5-8 pinout?
The MT48V8M32LFB5-8 pinout is documented in Micron's mobile SDRAM datasheet, which contains the 90-ball VFBGA ball-map (address bus A0-A12, data bus DQ0-DQ31, control signals, clock, and power/ground balls). Refer to the datasheet's package drawing section for the exact ball coordinates, and check the BGA pinout against your PCB footprint before assembly.

工程參考資料,適用於 MT48V8M32LFB5-8 — 比較、設計指引及合規資訊。

選型指南

Choose MT48V8M32LFB5-8 when designing a 3.3 V battery-powered handheld product that needs 256 Mbit of x32 Mobile SDRAM with Partial Array Self-Refresh (PASR) for low standby current. The -8 speed grade at 125 MHz / CAS latency 3 is suitable when the host controller and PCB signal integrity permit the maximum mobile SDRAM throughput. Choose MT48V8M32LFB5-10 if your design has timing margin and you need cost savings or a slightly easier signal-integrity closure. Choose MT48V8M32LFB5-6 if your application requires higher throughput and your controller can drive a faster SDRAM interface. Choose MT48V8M32LFF5-8 for full lead-free / RoHS-compliant assembly when sourcing constraints require it. Avoid MT48LC8M32LFB5-8 (legacy SDRAM) when you need PASR for standby power reduction.

與替代品比較

參數 本產品 MT48V8M32LFB5-10 MT48V8M32LFB5-6 MT48V8M32LFF5-8 MT48LC8M32LFB5-8
Brand Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Package 90-VFBGA (8x13 mm) 90-VFBGA (8x13 mm) - same 90-VFBGA (8x13 mm) - same 90-VFBGA (8x13 mm) - same 90-VFBGA (8x13 mm) - same
Density 256 Mbit 256 Mbit 256 Mbit 256 Mbit 256 Mbit
Organization 8M x 32 8M x 32 8M x 32 8M x 32 8M x 32
Memory Type Mobile LPSDR Mobile LPSDR Mobile LPSDR Mobile LPSDR (lead-free) Legacy SDRAM
Max Clock Frequency 125 MHz 100 MHz (-20%) 166 MHz (+33%) 125 MHz (same) 125 MHz (same)
tCK (Clock Period) 8 ns 10 ns 6 ns 8 ns (same) 8 ns (same)
PASR Support Yes Yes Yes Yes No (standard SDRAM)
Supply Voltage 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V

主要差異化特點

  • Wide x32 organization eliminates need for two x16 SDRAMs in parallel (對比MT48LC8M32LFB5-8)
  • Higher bandwidth than -10 speed grade (對比MT48V8M32LFB5-10)
  • Drop-in pin-compatible with lead-free variants (對比MT48V8M32LFF5-8)

設計說明

Route the SDRAM clock (CLK) with controlled impedance (typically 50 ohm single-ended to ground) and length-match to within +/-25 mils of the longest DQ/DQS byte group per Micron TN-00-08. Keep the clock trace on an internal stripline layer sandwiched between continuous ground planes to suppress coupling from adjacent address/control signals. Use a 4-layer PCB minimum with a dedicated ground plane beneath the 90-ball VFBGA to provide a low-impedance return path for simultaneous-switching outputs and to keep junction-to-ambient thermal resistance within the datasheet limits.

Length-match the 32-bit DQ bus in byte groups with per-byte skew under 50 ps to maintain valid data-eye at 125 MHz CAS latency 3. Place series damping resistors (10-33 ohm) near the SDRAM controller if the controller does not provide programmable drive strength, and use Vias-in-Pad only if the BGA escape pattern requires - otherwise prefer dog-bone fan-out to preserve the ground-return reference plane. Decouple every Vdd and Vddq ball with a 0.1 uF X7R ceramic placed within 100 mils of the ball, plus a single 10 uF bulk capacitor per supply rail near the device.

Do not confuse Mobile SDRAM (LPSDR) command codes with standard SDRAM refresh requirements - Mobile LPSDR supports Partial Array Self-Refresh (PASR) via the Extended Mode Register, and incorrectly programming PASR can lock the device in self-refresh or leave arrays un-refreshed causing data corruption. Always issue a full array refresh before PASR entry and verify the Extended Mode Register setting in the datasheet. Also note that the 90-ball VFBGA has no exposed thermal pad - heat removal depends entirely on internal ball connections to the ground plane and the small package size requires the PCB ground-pour area to be maximized.

合規資訊

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
無鉛
Yes
無鹵
Unknown
衝突礦產
Compliant

RoHS compliance per distributor listings. Last Time Buy status per Micron product change notifications - verify final order date with Micron or authorized distributors.

資料驗證日期: 2026-10-05 — 資料由 XAIPART 元件工程團隊驗證及整理

相關搜尋

MT48V8M32LFB5-8 MT48V8M32LFB5-8 datasheet Micron 256Mbit Mobile SDRAM 8Mx32 90-VFBGA SDRAM mobile SDRAM 125 MHz CAS latency 3 MT48V8M32LFB5-8 VFBGA pinout MT48V8M32LFB5-8 handheld GPS MT48V8M32LFB5-8 vs MT48V8M32LFB5-10 MT48V8M32LFB5-8 buy last time buy mobile SDRAM drop-in replacement low power SDRAM PASR partial array self refresh where to buy MT48V8M32LFB5-8

相關元件與詞彙

Micron Technology MT48V8M32LFB5-8 MT48V8M32LFB5-10 MT48V8M32LFB5-6 MT48V8M32LFF5-8 MT48LC8M32LFB5-8 Mobile SDRAM LPSDR JEDEC SDRAM 256 Mbit 8Mx32 90-ball VFBGA BGA Partial Array Self-Refresh PASR CAS latency RoHS lead-free handheld GPS portable medical device feature phone barcode scanner industrial HMI Micron TN-00-08
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