MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron
MPN： MT41K256M16TW-107:P ✓ 啟用中MT41K256M16TW-107:P 概覽
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in servers, laptops, and embedded systems. DDR3L is backward compatible with DDR3 slots, making it a versatile choice for upgrades and new designs.
Key features include a 4Gbit density, 16-bit data bus, 933 MHz clock speed, and support for JEDEC-standard DDR3L-1866 timing. The device includes auto self-refresh, auto precharge, write leveling, dynamic on-chip termination (ODT), and ZQ calibration, ensuring signal integrity and reliable operation. It operates over a temperature range of 0°C to +95°C, making it suitable for commercial and industrial environments.
Technically, the MT41K256M16TW-107:P uses a high-performance CMOS process and features a programmable CAS latency of 11, 12, 13, and 14, with a burst length of 8 and burst chop of 4. It supports on-die termination (ODT) for improved signal integrity and includes a DLL for precise clock alignment. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include high-performance computing, networking equipment, industrial automation, and embedded systems where low power and high bandwidth are critical. Its 1.35V operation reduces thermal load, making it ideal for compact, power-sensitive designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and careful termination of the address/control lines.
直接替換替代品，適用於 MT41K256M16TW-107:P — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MT41K256M16TW-107:P （相同外形與佔位） — 差異在於 Package, Supply Voltage, Memory Type, Memory Size, Data Rate.
MT41K256M16TW-107IT:P
✅ 直接替換📋 參考替代品（不在目錄中）
MT41K256M16TW-107AIT:P
✅ 直接替換📋 參考替代品（不在目錄中）
MT41K256M16HA-125XIT:E
✅ 直接替換📋 參考替代品（不在目錄中）
K4B4G1646D-BYMA
✅ 直接替換📋 參考替代品（不在目錄中）
AS4C256M16D3LC-10BCN
✅ 直接替換📋 參考替代品（不在目錄中）
MT41K256M16TW-107:P 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| 記憶體容量 | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| 資料速率 | 1866 MT/s |
| 供應電壓 | 1.35V |
| I/O Voltage | 1.35V |
| CAS 延遲 | 13 |
| tRCD | 20 ns |
| tRP | 20 ns |
| Burst Length | 8 |
| 封裝 | 96-FBGA (8x14mm) |
| 工作溫度 | 0°C to +95°C |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
MT41K256M16TW-107:P 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 B1 | DQ2 — Data input/output 2 |
| 腳位 B2 | DQ3 — Data input/output 3 |
| 腳位 B3 | VDDQ — I/O power supply (1.35V) |
| 腳位 B4 | DQ4 — Data input/output 4 |
| 腳位 C1 | DQ5 — Data input/output 5 |
| 腳位 C2 | DQ6 — Data input/output 6 |
| 腳位 C3 | DQ7 — Data input/output 7 |
| 腳位 C4 | VSS — Ground |
典型應用
MT41K256M16TW-107:P 適用於 6 應用s: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Consumer Electronics, Automotive Infotainment.
High-Performance Computing
The MT41K256M16TW-107:P provides 4Gbit of DDR3L memory at 1866 MT/s, making it ideal for servers and workstations where high bandwidth and low power are critical. Its 1.35V operation reduces thermal load, enabling denser memory configurations. The 96-FBGA package allows compact PCB layouts, and the 16-bit data bus simplifies routing in multi-rank designs. With a CAS latency of 13, it balances speed and latency for compute-intensive workloads.
推薦
Networking Equipment
In routers and switches, the MT41K256M16TW-107:P offers high-speed packet buffering with 1866 MT/s data rate and low latency. Its auto self-refresh and write leveling features ensure reliable operation in high-traffic environments. The 1.35V supply reduces power consumption in always-on network devices. The 96-FBGA package is suitable for space-constrained line cards, and the 16-bit interface simplifies connection to network processors.
推薦
Industrial Automation
The MT41K256M16TW-107:P operates from 0°C to +95°C, making it suitable for industrial control systems. Its robust design includes dynamic ODT and ZQ calibration for signal integrity in noisy environments. The 4Gbit density supports large data logging and real-time processing. The 1.35V operation reduces heat generation in sealed enclosures, and the 96-FBGA package withstands vibration in factory settings.
推薦
Embedded Systems
For embedded applications, the MT41K256M16TW-107:P provides a balance of performance and power efficiency. Its 1.35V supply is ideal for battery-powered devices, and the 4Gbit capacity supports complex applications like image processing. The 96-FBGA package is compact, and the 16-bit bus reduces pin count, simplifying PCB design. Auto self-refresh extends battery life in standby modes.
推薦
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the MT41K256M16TW-107:P delivers high bandwidth for smooth video playback and multitasking. Its low voltage reduces heat, enabling slim designs. The 96-FBGA package is suitable for compact PCBs, and the 1866 MT/s data rate supports 4K video streams. Write leveling ensures reliable operation in high-speed interfaces.
推薦
Automotive Infotainment
The MT41K256M16TW-107:P is used in automotive infotainment systems where reliability and temperature range are critical. While not AEC-Q100 qualified, the industrial temperature variant (MT41K256M16TW-107IT:P) is available for -40°C to +95°C operation. The 4Gbit density supports navigation and multimedia, and the 1.35V supply reduces power in vehicle electrical systems. The 96-FBGA package withstands vibration.
推薦
推薦產品摘要
工程參考資料，適用於 MT41K256M16TW-107:P — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MT41K256M16TW-107IT:P | MT41K256M16TW-107AIT:P | K4B4G1646D-BYMA |
|---|---|---|---|---|
| Package | 96-FBGA (8x14mm) | 96-FBGA (8x14mm) | 96-FBGA (8x14mm) | 96-FBGA (8x14mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 1866 MT/s | 1866 MT/s | 1866 MT/s | 1866 MT/s |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C |
| CAS Latency | 13 | 13 | 13 | 13 |
| AEC-Q100 | No | No | Yes | No |
主要差異化特點
- Higher data rate (1866 MT/s) compared to MT41K256M16HA-125XIT:E (1600 MT/s) (對比MT41K256M16HA-125XIT:E)
- Lower voltage (1.35V) compared to standard DDR3 (1.5V) (對比Standard DDR3 parts)
- Industrial temperature grade available (MT41K256M16TW-107IT:P) (對比K4B4G1646D-BYMA)
設計說明
The MT41K256M16TW-107:P requires a stable 1.35V supply. Use low-ESR ceramic capacitors (0.1uF and 1uF) placed close to each VDD and VDDQ pin to minimize voltage ripple. Ensure the power plane has low impedance across the frequency range of interest.
Follow the layout guidelines in the Micron datasheet for DDR3L routing. Match trace lengths for DQ, DQS, and address/control signals to maintain signal integrity. Use controlled impedance traces (typically 40-60 ohms) and provide proper termination for address/control lines.
The device operates up to +95°C, but ensure adequate airflow or heatsinking in high-power systems. The 1.35V supply reduces power dissipation, but in dense memory arrays, thermal vias under the FBGA package can help dissipate heat.
合規資訊
RoHS compliant per JLCPCB listing. Lead-free per Micron. Not AEC-Q100 qualified for standard part; automotive grade available as MT41K256M16TW-107AIT:P.
