NT5CC256M16ER-EKT - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN： NT5CC256M16ER-EKT ✓ 啟用中NT5CC256M16ER-EKT 概覽
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include a 4Gb density organized as 256Mx16, a 96-ball TFBGA package, and support for DDR3L-1866 speed grade. The device operates from a 1.35V supply (with 1.5V compatibility) and features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. The industrial temperature range option (EKI suffix) is available for harsh environments.
Technically, the NT5CC256M16ER-EKT uses an 8n-prefetch architecture with a 16-bit I/O interface, achieving data rates up to 1866 Mbps. It includes a mode register set (MRS) for configuration, DLL for timing alignment, and ZQ calibration for output driver and ODT impedance tuning. The device supports various power-saving modes including power-down and self-refresh, making it suitable for battery-powered applications.
Typical applications include DDR3L memory modules for laptops and embedded systems, networking equipment such as routers and switches, industrial automation controllers, and automotive infotainment systems. Its low voltage and high density make it ideal for space-constrained designs requiring high memory bandwidth.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The ZQ pin requires a 240-ohm resistor to ground for calibration.
直接替換替代品，適用於 NT5CC256M16ER-EKT — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： NT5CC256M16ER-EKT （相同外形與佔位） — 差異在於 Package, Supply Voltage, Operating Temperature, Data Rate, Clock Frequency.
NT5CC256M16ER-EK
✅ 直接替換聯絡詢價
查看資料表 →NT5CC256M16ER-EKI
✅ 直接替換✗ 缺貨
$16.7045 / 單位
查看資料表 →MT41K256M16TW-107
✅ 直接替換✗ 缺貨
$14.1 / 單位
查看資料表 →AS4C256M16D3LC-10BCN
✅ 直接替換📋 參考替代品（不在目錄中）
IS43TR16256AL-125KBL
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646E-BYMA
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.3182 / 單位
查看資料表 →NT5CC256M16ER-EKT 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4 Gb |
| 組織 | 256M x 16 |
| 供應電壓 | 1.35 V (1.5 V compatible) |
| Speed Grade | DDR3L-1866 (1866 Mbps) |
| CAS 延遲 | 13 |
| Timing | 13-13-13 |
| 封裝 | 96-ball TFBGA |
| 工作溫度範圍 | 0°C to +95°C |
| 介面 | 16-bit |
| Burst Length | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (dynamic) |
| ZQ Calibration | Yes |
| Auto Self-Refresh | Yes |
| RoHS | Compliant |
NT5CC256M16ER-EKT 腳位配置
| 腳位 A1 | VDD — Power supply for core logic |
| 腳位 A2 | VSS — Ground |
| 腳位 B1 | DQ0 — Data input/output bit 0 |
| 腳位 B2 | DQ1 — Data input/output bit 1 |
| 腳位 C1 | DQ2 — Data input/output bit 2 |
| 腳位 C2 | DQ3 — Data input/output bit 3 |
| 腳位 D1 | VDDQ — Power supply for I/O |
| 腳位 D2 | VSSQ — Ground for I/O |
| 腳位 E1 | A0 — Address input bit 0 |
| 腳位 E2 | A1 — Address input bit 1 |
| 腳位 F1 | A2 — Address input bit 2 |
| 腳位 F2 | A3 — Address input bit 3 |
| 腳位 G1 | BA0 — Bank address bit 0 |
| 腳位 G2 | BA1 — Bank address bit 1 |
| 腳位 H1 | RAS# — Row address strobe |
| 腳位 H2 | CAS# — Column address strobe |
| 腳位 J1 | WE# — Write enable |
| 腳位 J2 | CS# — Chip select |
| 腳位 K1 | CK — Clock input |
| 腳位 K2 | CK# — Complementary clock input |
| 腳位 L1 | CKE — Clock enable |
| 腳位 L2 | ODT — On-die termination control |
| 腳位 M1 | ZQ — Calibration reference |
| 腳位 M2 | RESET# — Reset input |
典型應用
NT5CC256M16ER-EKT 適用於 6 應用s: Laptop and Notebook Memory, Networking Equipment, Industrial Automation, Automotive Infotainment, Embedded Systems, Server and Data Center.
Laptop and Notebook Memory
The NT5CC256M16ER-EKT is ideal for laptop and notebook memory modules due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization provide sufficient capacity for mainstream computing tasks. The DDR3L-1866 speed ensures fast data transfer for multitasking and multimedia applications. The TFBGA package allows for compact module designs, fitting into slim laptop form factors. Its compatibility with 1.5V DDR3 systems ensures flexibility in mixed-voltage environments.
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Networking Equipment
In networking equipment such as routers and switches, the NT5CC256M16ER-EKT provides high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput processing, while the 1.35V operation reduces heat generation in dense networking hardware. The industrial temperature range option (EKI) is available for outdoor or harsh environments. The device's on-die termination and ZQ calibration ensure signal integrity in high-speed PCB designs, critical for reliable data transmission.
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Industrial Automation
The NT5CC256M16ER-EKT is suitable for industrial automation controllers that require reliable memory in temperature-extreme environments. With an operating temperature range of 0°C to +95°C (or -40°C to +95°C for EKI variant), it can withstand factory floor conditions. The low voltage operation reduces power consumption in 24/7 operation, and the high density supports complex control algorithms and data logging. Its robust design and long lifecycle make it a dependable choice for industrial applications.
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Automotive Infotainment
In automotive infotainment systems, the NT5CC256M16ER-EKT provides high-speed memory for navigation, multimedia playback, and connectivity features. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 1866 Mbps speed ensures smooth performance for graphics and audio processing. The device's wide temperature range supports under-hood and cabin environments. Its compatibility with 1.5V DDR3 systems allows integration with existing automotive electronics.
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Embedded Systems
The NT5CC256M16ER-EKT is well-suited for embedded systems such as single-board computers, IoT gateways, and medical devices. Its low power consumption is critical for battery-powered or energy-efficient designs. The 4Gb density provides ample memory for operating systems and applications, while the TFBGA package allows for compact PCB layouts. The device's support for auto self-refresh and power-down modes helps optimize energy usage in idle states.
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Server and Data Center
Although DDR3L is older than DDR4/DDR5, the NT5CC256M16ER-EKT can be used in legacy servers and data center equipment that still rely on DDR3L memory. Its 4Gb density and 1866 Mbps speed provide adequate performance for entry-level servers and storage systems. The low voltage operation reduces power consumption in large-scale deployments, contributing to lower operational costs. Its reliability and long availability make it a viable option for maintaining existing infrastructure.
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推薦產品摘要
工程參考資料，適用於 NT5CC256M16ER-EKT — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | NT5CC256M16ER-EK | MT41K256M16TW-107 | AS4C256M16D3LC-10BCN | IS43TR16256AL-125KBL | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory | ISSI | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.5 V compatible) | 1.35 V (1.5 V compatible) | 1.35 V (1.5 V compatible) | 1.35 V (1.5 V compatible) | 1.35 V (1.5 V compatible) | 1.35 V (1.5 V compatible) |
| Speed Grade | DDR3L-1866 | DDR3L-1866 | DDR3L-1866 | DDR3L-1600 | DDR3L-1866 | DDR3L-1866 |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Low voltage operation (1.35V) with 1.5V compatibility (對比Standard DDR3 parts (1.5V))
- High speed grade DDR3L-1866 (對比AS4C256M16D3LC-10BCN (DDR3L-1600))
- Industrial temperature grade option (EKI) (對比Standard temperature grade (0°C to +95°C))
設計說明
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for data and address/control lines. Keep trace lengths matched within 100 mils for data groups and 500 mils for address/control. Use a solid ground plane beneath the memory device and minimize vias to reduce signal integrity issues. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The NT5CC256M16ER-EKT operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. For industrial applications, consider the EKI variant with extended temperature range. Monitor junction temperature to avoid exceeding the maximum rating.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Follow the DDR3L power-up sequence: apply VDD and VDDQ simultaneously, then CKE, and wait for reset and clock stabilization. Incorrect sequencing can cause initialization failures.
合規資訊
RoHS compliant per Nanya green product policy. Lead-free. AEC-Q100 not applicable for DRAM.
