H5TC4G63AFR-PBJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
MPN： H5TC4G63AFR-PBJ ✓ 啟用中H5TC4G63AFR-PBJ 概覽
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, offering a 15% power reduction compared to standard DDR3 at 1.5V. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, servers, and embedded systems where power efficiency is critical.
Key features include a 256M x 16 organization, 96-ball TFBGA package, industrial temperature grade (-40°C to +95°C), and support for 8192 refresh cycles. The device supports auto self-refresh, data mask, auto precharge, asynchronous reset, dynamic on-chip termination (DTC), ZQ calibration, and write leveling, ensuring reliable operation in demanding environments.
The H5TC4G63AFR-PBJ uses a CMOS process and features a rectangular package shape. It is designed for high-density, high-bandwidth, and low-power applications. The industrial temperature grade allows operation in harsh conditions, making it ideal for automotive, industrial, and networking applications.
Typical applications include main memory for embedded processors, networking routers and switches, industrial PCs, and test equipment. The low voltage and high bandwidth make it suitable for power-sensitive designs.
When designing with this device, ensure proper decoupling and signal integrity practices are followed. The ZQ calibration pin requires a 240-ohm resistor to ground for optimal signal quality.
直接替換替代品，適用於 H5TC4G63AFR-PBJ — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5TC4G63AFR-PBJ （相同外形與佔位） — 差異在於 Data Rate, Package, Burst Length, CAS Latency, Operating Temperature.
H5TC4G63AFR-PBR
✅ 直接替換✗ 缺貨
$5.9091 / 單位
查看資料表 →H5TC4G63AFR-PBA
✅ 直接替換✗ 缺貨
$3.9773 / 單位
查看資料表 →H5TC4G63AFR-PBI
✅ 直接替換聯絡詢價
查看資料表 →H5TC4G63AFR-G7A
✅ 直接替換聯絡詢價
查看資料表 →H5TC4G63AFR-H9A
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BCK00
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →MT41K256M16RE-125:D
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →NT5CC256M16ER-EK
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5TC4G63AFR-PBJ 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| 記憶體容量 | 4 Gb (256M x 16) |
| 供應電壓 | 1.35 V |
| 封裝 | 96-ball TFBGA |
| Temperature Grade | Industrial (-40°C to +95°C) |
| Refresh Cycles | 8192 |
| Package Shape | Rectangular |
| Number of Terminals | 96 |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | Yes |
| Data Mask | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
H5TC4G63AFR-PBJ 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 B1 | DQ2 — Data input/output 2 |
| 腳位 B2 | DQ3 — Data input/output 3 |
| 腳位 B3 | VDDQ — I/O power supply |
| 腳位 B4 | DQ4 — Data input/output 4 |
| 腳位 C1 | DQ5 — Data input/output 5 |
| 腳位 C2 | DQ6 — Data input/output 6 |
| 腳位 C3 | DQ7 — Data input/output 7 |
| 腳位 C4 | VSS — Ground |
| 腳位 D1 | VDD — Power supply |
| 腳位 D2 | A0 — Address input 0 |
| 腳位 D3 | A1 — Address input 1 |
| 腳位 D4 | A2 — Address input 2 |
| 腳位 E1 | A3 — Address input 3 |
| 腳位 E2 | A4 — Address input 4 |
| 腳位 E3 | A5 — Address input 5 |
| 腳位 E4 | A6 — Address input 6 |
| 腳位 F1 | A7 — Address input 7 |
| 腳位 F2 | A8 — Address input 8 |
| 腳位 F3 | A9 — Address input 9 |
| 腳位 F4 | A10/AP — Address input 10 / Auto-precharge |
| 腳位 G1 | A11 — Address input 11 |
| 腳位 G2 | A12 — Address input 12 |
| 腳位 G3 | A13 — Address input 13 |
| 腳位 G4 | A14 — Address input 14 |
| 腳位 H1 | BA0 — Bank address 0 |
| 腳位 H2 | BA1 — Bank address 1 |
| 腳位 H3 | BA2 — Bank address 2 |
| 腳位 H4 | VSS — Ground |
| 腳位 J1 | CK — Clock input |
| 腳位 J2 | CK# — Complementary clock input |
| 腳位 J3 | CKE — Clock enable |
| 腳位 J4 | CS# — Chip select |
| 腳位 K1 | RAS# — Row address strobe |
| 腳位 K2 | CAS# — Column address strobe |
| 腳位 K3 | WE# — Write enable |
| 腳位 K4 | ODT — On-die termination |
| 腳位 L1 | DM0 — Data mask 0 |
| 腳位 L2 | DM1 — Data mask 1 |
| 腳位 L3 | ZQ — ZQ calibration (240-ohm resistor to ground) |
| 腳位 L4 | VDD — Power supply |
典型應用
H5TC4G63AFR-PBJ 適用於 6 應用s: Embedded Processors, Networking Equipment, Industrial PCs, Test and Measurement, Automotive Infotainment, Medical Devices.
Embedded Processors
The H5TC4G63AFR-PBJ provides 4Gb DDR3L memory for embedded processors, offering high bandwidth and low power at 1.35V. Its industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments. The 256M x 16 organization supports 16-bit data bus widths, ideal for SoCs and FPGAs. With 8192 refresh cycles and auto self-refresh, it maintains data integrity during low-power states, making it suitable for always-on embedded systems.
推薦
Networking Equipment
In networking routers and switches, the H5TC4G63AFR-PBJ delivers high-bandwidth memory for packet buffering and forwarding tables. Its 1.35V operation reduces power consumption in 24/7 operation, while the industrial temperature grade supports outdoor and industrial networking gear. The 96-ball TFBGA package enables compact PCB layouts, and features like dynamic on-chip termination and write leveling improve signal integrity at high speeds, ensuring reliable data transmission.
推薦
Industrial PCs
Industrial PCs require robust memory that can withstand temperature fluctuations and vibration. The H5TC4G63AFR-PBJ's industrial temperature grade (-40°C to +95°C) and 96-ball TFBGA package provide durability. Its 4Gb density supports multitasking and data logging, while 1.35V operation reduces heat generation. Features like auto precharge and data mask enhance memory efficiency, making it ideal for factory automation and process control systems.
推薦
Test and Measurement
Test equipment such as oscilloscopes and logic analyzers require high-speed data acquisition and storage. The H5TC4G63AFR-PBJ offers high bandwidth and low latency, enabling fast waveform capture. Its 1.35V low-power operation is beneficial for portable instruments. The industrial temperature grade ensures accuracy in varying lab conditions. With 8192 refresh cycles and auto self-refresh, it maintains data integrity during long captures, making it a reliable choice for precision measurement.
推薦
Automotive Infotainment
In automotive infotainment systems, the H5TC4G63AFR-PBJ provides high-bandwidth memory for navigation, multimedia, and instrument clusters. Its industrial temperature grade supports under-hood and cabin environments. The 1.35V operation reduces power draw from the vehicle battery. Features like dynamic on-chip termination and write leveling ensure signal integrity in noisy automotive environments. The 96-ball TFBGA package withstands vibration, making it suitable for in-vehicle electronics.
推薦
Medical Devices
Medical devices such as patient monitors and diagnostic equipment require reliable, high-capacity memory. The H5TC4G63AFR-PBJ's industrial temperature grade ensures operation in clinical environments. Its 4Gb density supports complex algorithms and data logging. The 1.35V low-power operation is critical for battery-powered portable devices. Features like auto self-refresh and data mask enhance data integrity, making it suitable for life-critical applications where memory reliability is paramount.
推薦
推薦產品摘要
工程參考資料，適用於 H5TC4G63AFR-PBJ — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5TC4G63AFR-PBR | H5TC4G63AFR-PBA | K4B4G1646D-BCK00 | MT41K256M16RE-125:D |
|---|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung | Micron |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Temperature Grade | Industrial (-40°C to +95°C) | Industrial (-40°C to +95°C) | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) |
| Refresh Cycles | 8192 | 8192 | 8192 | 8192 | 8192 |
主要差異化特點
- Industrial temperature grade (-40°C to +95°C) (對比K4B4G1646D-BCK00)
- Same-brand drop-in variants with different speed grades (對比H5TC4G63AFR-PBA)
- Cross-brand availability from Samsung and Micron (對比K4B4G1646D-BCK00)
設計說明
For optimal signal integrity, route DDR3L traces with controlled impedance (typically 40-60 ohms single-ended, 80-120 ohms differential). Keep trace lengths matched within 50 mils for address/control and 20 mils for data. Place the ZQ pin's 240-ohm resistor (1% tolerance) as close to the ball as possible, with a clean ground return. Use a solid ground plane beneath the memory device to minimize noise.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed within 100 mils of each ball. Use a 10uF bulk capacitor near the memory power input. The 1.35V supply should have low ripple (<50mV) to ensure reliable operation. Consider using a dedicated DDR3L power regulator with good transient response.
The industrial temperature grade allows operation up to +95°C, but ensure adequate airflow or heatsinking if the device is in a confined enclosure. The 96-ball TFBGA package has a thermal resistance that depends on PCB copper area; provide at least 4 thermal vias under the exposed pad to improve heat dissipation. Monitor junction temperature to stay within the specified range.
合規資訊
Compliance information not explicitly provided in the verified data. Check the manufacturer datasheet or contact SK Hynix for RoHS/REACH status.
