PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
Référence : PDRQLAKCDF12-00 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $17.2 | $172,00 |
| 100 | $15.9 | $1 590,00 |
| 500 | $14.8 | $7 400,00 |
| 1 000 | $13.6 | $13 600,00 |
PDRQLAKCDF12-00 Présentation
A DRAM (Dynamic Random Access Memory) is the primary volatile working memory in modern computing systems, sitting at the top of the memory hierarchy below CPU caches. DDR5 SDRAM is the fifth generation of double-data-rate synchronous DRAM, doubling the bank groups and burst length of DDR4, moving the power management IC (PMIC) onto the module, and lowering the per-bit operating voltage to 1.1 V for improved power efficiency in high-density memory subsystems.
Key features of the PDRQLAKCDF12-00 include its 7200 Mbps data rate - an improvement over the previous 6400 Mbps DDR5 generation - a 1G x16 organization suited to wide-memory-bus designs, and the JEDEC-standard 1.1 V operating voltage with on-die termination and on-die ECC features typical of the DDR5 generation. The 102-ball FBGA (fine-pitch ball grid array) package provides a compact surface-mount footprint for direct mounting on memory modules or on-board memory designs.
Architecturally, this device belongs to Samsung's DDR5 DRAM component family. Samsung has sampled native 7200 Mbps DDR5 products in two packages: the 78-ball FBGA PDRQL8KCBF12-00 and the 102-ball FBGA PDRQLAKCDF12-00, both supporting 7200 Mbps at 1.1 V per JEDEC specification. The x16 organization of this part reduces the number of components needed to populate a 64-bit or 128-bit channel.
Typical applications include PC and workstation UDIMM/SO-DIMM memory modules, client and server RDIMM designs, graphics and accelerator board memory, and embedded on-board memory in networking and industrial systems that require high bandwidth.
Designers should verify BIOS/memory-controller training support for the 7200 Mbps speed bin, and ensure power delivery follows the DDR5 PMIC architecture at 1.1 V.
This page synthesizes distributor availability data, speed-bin context, and drop-in alternative options not found on a single manufacturer page.
Alternatives de remplacement direct pour PDRQLAKCDF12-00 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec PDRQLAKCDF12-00 (même facteur de forme et même empreinte) — différant par Data Rate, Package, Generation, Memory Type, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4RAH165VB-BCWM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$9.92 / unité
Voir la fiche technique →K4RAH165VP-BCWM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$24.6094 / unité
Voir la fiche technique →K4RAH165VB-BCQK
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K4RAH165VB-BIQK
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K4RAH086VE-BCWM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.6 / unité
Voir la fiche technique →PDRQLAKCDF12-00 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR5 SDRAM |
| Density | 16 Gbit |
| Organisation de la mémoire | 1G x 16 |
| Débit de données | 7200 Mbps per pin |
| Speed Bin | DDR5-7200 |
| Operating Voltage | 1.1 V |
| Boîtier | 102-ball FBGA |
| Type de montage | Surface Mount |
| Generation | DDR5 (improved from 6400 Mbps generation) |
| Interface | JEDEC DDR5 |
Guide de configuration des broches du PDRQLAKCDF12-00 102-ball fbga
Configuration des broches du PDRQLAKCDF12-00 (boîtier 102-ball fbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour PDRQLAKCDF12-00.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
PDRQLAKCDF12-00 convient pour 6 applications: PC and Workstation Memory Modules (UDIMM/SO-DIMM), Server RDIMM and Data Center Memory, Graphics and AI Accelerator Board Memory, Networking and Communication Equipment, Industrial Automation and Edge Computing, Embedded On-Board Memory in Consumer and IoT Hubs.
PC and Workstation Memory Modules (UDIMM/SO-DIMM)
The PDRQLAKCDF12-00 fits client PC UDIMM and SO-DIMM designs where its 7200 Mbps data rate and 1G x16 organization deliver high per-channel bandwidth at the JEDEC 1.1 V operating voltage. A typical DDR5 UDIMM places multiple x16 components per 64-bit channel, and the on-module PMIC converts 5 V to the 1.1 V DRAM rail. The DDR5-7200 bin requires memory-controller training support, but delivers roughly 12.5% more bandwidth than the 6400 Mbps generation, improving integrated-graphics and content-creation performance. designers should follow Samsung layout guidance for length matching and on-die termination settings.
Recommandé
Server RDIMM and Data Center Memory
Data center server platforms use registered DIMMs built from DDR5 x16 components; the PDRQLAKCDF12-00's 16 Gbit density allows high-capacity RDIMMs when combined with register clock drivers and SPD hubs. Its 1.1 V operation reduces per-DIMM power, which directly cuts data center cooling budgets, while the 7200 Mbps speed bin supports next-generation Xeon/EPYC memory controllers. The x16 organization reduces component count per module, improving yield and cost. Server designs must validate RCD compatibility and on-die ECC reporting in the BMC memory-training flow before production.
Recommandé
Graphics and AI Accelerator Board Memory
GPU add-in boards and AI accelerator cards often attach DDR5 components directly to the PCB around the host processor. The PDRQLAKCDF12-00's 7200 Mbps rate provides the bandwidth headroom these workloads demand, and its 102-ball FBGA footprint supports dense on-board arrays of x16 devices. At 1.1 V, a bank of components dissipates measurably less heat than an equivalent DDR4-3200 array, easing airflow design. Designers must implement fly-by command/address routing, reference-voltage planes, and per-byte DQS training consistent with JEDEC DDR5 board design guidelines for signal integrity at 7200 Mbps.
Recommandé
Networking and Communication Equipment
Enterprise switches, routers, and 5G baseband cards use DDR5 as packet-buffer and control-plane memory. The PDRQLAKCDF12-00's combination of 16 Gbit density and 1G x16 organization suits wide, deep buffer pools, while 7200 Mbps operation sustains line-rate packet processing without memory bottlenecks. The 102-ball FBGA surface-mount package allows direct on-board attachment - no sockets, improving reliability in always-on networking hardware. Industrial-temperature screening options in the K4RAH family cover extended-ambient telecom racks; verify the required temperature grade and conformance testing for NEBS-type deployments.
Recommandé
Industrial Automation and Edge Computing
Industrial PCs, machine-vision controllers, and edge AI gateways increasingly adopt DDR5 for larger working sets in vision inference and protocol processing. The PDRQLAKCDF12-00's 1.1 V operation lowers rail power in passively cooled enclosures, and its 7200 Mbps bandwidth accelerates frame-buffer handling in multi-camera vision systems. On-board soldered DDR5 also resists vibration better than socketed modules. For these deployments, pair the DRAM with wide-input power modules and verify memory-controller training margins over the full -40C to +85C ambient range if industrial-screening variants are selected.
Recommandé
Embedded On-Board Memory in Consumer and IoT Hubs
Smart-home hubs, premium set-top boxes, and in-vehicle infotainment head units use soldered-down DDR5 to save space and improve mechanical robustness. The PDRQLAKCDF12-00's 102-ball FBGA supports compact multi-layer layouts, and 16 Gbit capacity covers modern media pipelines with headroom. Its DDR5-7200 bin enables responsive 4K/8K media playback and edge AI workloads at 1.1 V, reducing thermal design constraints in sealed enclosures. Consumer platforms should confirm SoC memory-controller support for the speed bin and implement JEDEC DDR5 power-ramp sequencing for reliable boot.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour PDRQLAKCDF12-00 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4RAH165VB-BCWM | K4RAH165VP-BCWM | K4RAH165VB-BCQK | K4RAH086VE-BCWM |
|---|---|---|---|---|---|
| Package | 102-ball FBGA | 102-ball FBGA - same | 102-ball FBGA - same | 102-ball FBGA - same | 102-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit (2G x8) |
| Organization | 1G x16 | 1G x16 | 1G x16 | 1G x16 | 2G x8 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
Principaux différenciateurs
- Native 7200 Mbps speed bin (vs K4RAH165VB-BCWM)
- x16 organization reduces component count (vs K4RAH086VE-BCWM)
- 102-ball FBGA footprint flexibility (vs PDRQL8KCBF12-00)
Notes de conception
DDR5 moves voltage regulation onto the module: a dedicated PMIC generates the 1.1 V DRAM core rail from a 5 V or 12 V input with I2C/I3C programmability. Size the PMIC for peak current of all mounted components - estimate roughly 16 Gbit x16 parts drawing several hundred mA each during 7200 Mbps bursts (exact current per Samsung datasheet IDD tables). Verify power-ramp sequencing between VDD, VDDQ, and VPP per the JEDEC DDR5 specification to avoid latch-up during hot-plug or brownout events.
At 7200 Mbps, DDR5 signal integrity demands careful stackup and routing: use fly-by CA routing, length-match DQ/DQS byte groups within tight intra-byte skew budgets, and reference DQ nets to solid VSS/VDDQ planes with adequate decoupling. The 102-ball FBGA footprint allows via-in-pad or dog-bone escape; for arrays, prefer via-in-pad with filled vias to shorten the electrical path. Follow the Samsung DDR5 component layout guide and your memory-controller (CPU/SoC) design guideline, which take precedence over generic DRAM rules at this speed bin.
Do not assume the 7200 Mbps speed bin works on every DDR5 memory controller - many 2024-2025 chipsets train only to 5600/6400 Mbps. Confirm BIOS/firmware training tables support DDR5-7200 before committing BOM. Second, Samsung suffix codes encode speed, package, and screening; substituting between CDF/CBF and K4RAH suffix variants without checking the ordering-information table can silently change the speed bin or temperature grade. Always request the official Samsung DDR5 datasheet and match the full ordering code, not just the prefix.
Informations de conformité
Compliance data was not present in the retrieved web data. Samsung DDR5 components are generally RoHS-compliant, but confirm with the official Samsung product page and certificate of conformance before release.
