分立半导体
子分类
产品（1814)
IAUS300N08S5N012T - 80V, 1.2 mΩ, 300A OptiMOS 5 MOSFET | Infineon
The Infineon IAUS300N08S5N012T is an N-channel power MOSFET built on Infineon's OptiMOS 5 technology, rated for 80 V drain-source voltage, 1.2 mΩ maximum on-state resistance, and 300 A continuous drain current, supplied in a topside-cooled TOLT (PG-HDSOP-16-2) surface-mount package with 375 W power dissipation at case temperature. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch designed to handle high currents and voltages. MOSFETs belong to the transistor family within discrete semiconductors, and they are the fundamental building blocks of switched-mode power conversion. The IAUS300N08S5N012T sits in the 80 V N-channel subcategory and is specifically engineered for 48 V automotive systems including mild-hybrid powertrains, e-machines, DC-DC converters, and battery switches. The device's headline parameter is its ultra-low R_DS(on) of 1.2 mΩ at V_GS = 10 V, which minimises conduction losses in high-current paths. The 300 A continuous drain current rating (current limited by bondwire, with the chip itself capable of carrying 400 A at 25 °C with R_thJC = 0.4 K/W) makes it well-suited to high-power switching nodes. The device is qualified to AEC-Q101 for automotive use, and the TOLT topside-cooled package offers a low thermal resistance path to a cold plate or heatsink. Typical applications include 48 V traction inverters, 48 V DC-DC converters, 48 V battery main switches, high-current OR-ing circuits, and synchronous rectification in telecom and industrial power supplies. Its AEC-Q101 qualification also supports industrial-grade high-current switching where long-term reliability is required. When designing with the IAUS300N08S5N012T, careful PCB layout is critical: minimise source-loop inductance, use a wide copper pour on the topside pad, and ensure the V_GS gate-drive voltage is firmly above the threshold with adequate gate-drive strength to avoid shoot-through. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for BOM decisions and second-source selection.
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
The Infineon IAUT165N08S5N029ATMA2 is an 80 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology, rated for 165 A continuous drain current (Tc) and 167 W power dissipation, with an ultra-low typical on-resistance of 2.9 mΩ, housed in a surface-mount PG-HSOF-8-1 package. It is AEC-Q101 qualified for automotive use and is 100% avalanche-tested by the manufacturer. The device is also a Green Product (RoHS compliant) with MSL1 rated up to 260 °C peak reflow. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to efficiently route or block current in power-conversion circuits. Power MOSFETs sit within the broader hierarchy of discrete semiconductors, below IGBTs and thyristors, and are the workhorse of low-to-medium-voltage (< 250 V) switching applications. N-channel enhancement-mode MOSFETs like the IAUT165N08S5N029 are particularly common in high-current, low-side or high-side (with charge pump) switching positions because their lower R<sub>DS(on)</sub> per unit silicon area makes them more efficient than equivalent P-channel parts. Key features of the IAUT165N08S5N029ATMA2 include a maximum pulsed drain current of 660 A, an avalanche energy rating of 225 mJ, and an operating junction temperature up to 175 °C. The combination of 2.9 mΩ R<sub>DS(on)</sub> and 80 V drain-source breakdown voltage places this part squarely in the 48 V automotive / mild-hybrid, battery-isolation, and high-current synchronous-rectification sweet spot. OptiMOS™ 5 trench technology minimises gate charge (Q<sub>G</sub>) and output capacitance (C<sub>oss</sub>) for fast switching and reduced driver losses. Typical applications include 48 V eMobility power stages, high-current DC-DC converters, battery management systems (BMS) protection, motor drives for electric power steering (EPS) and water/oil pumps, and OR-ing / hot-swap controllers. Its low R<sub>DS(on)</sub> also makes it suitable for high-current synchronous rectification in telecom and server point-of-load converters. Design-in must respect the HSOF exposed-pad thermal path; without sufficient PCB copper, the 167 W Tc rating cannot be realised at realistic ambient temperatures.
IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET
The Infineon IAUT300N08S5N011ATMA1 is an 80 V N-channel automotive-grade power MOSFET from the OptiMOS 5 family, delivering up to 410 A pulsed drain current (Tj) with an ultra-low R<sub>DS(on)</sub> of 1.10 mOhm maximum at 10 V V<sub>GS</sub>, housed in a surface-mount PG-HSOF-8-1 (TOLL 10x12) package. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for high-efficiency power conversion. The IAUT300N08S5N011ATMA1 belongs to the N-channel enhancement-mode family, a subset of power MOSFETs that conducts when a positive gate-source voltage is applied. Within the broader power-semiconductor hierarchy, it sits under: MOSFET -> discrete semiconductor -> power management component. The "automotive" prefix ("AU") and the Infineon OptiMOS 5 designation indicate AEC-Q101 qualification, optimized for 48 V board-net applications where lowest conduction loss and high inrush current capability are required. Key specifications include a continuous drain current of 300 A, pulsed drain current of 410 A (limited by thermal and bonding constraints), 375 W power dissipation at T<sub>C</sub> = 25 C, and a threshold voltage V<sub>GS(th)</sub> of 3.8 V. The input capacitance C<sub>iss</sub> is 16.25 nF, output capacitance C<sub>oss</sub> is 2.6 nF, and reverse transfer capacitance C<sub>rss</sub> is 130 pF, with a total gate charge Q<sub>g</sub> of 231 nC at 10 V V<sub>GS</sub>. These switching figures, combined with 1.1 mOhm on-resistance, make the device well-suited for high-frequency switching at very high current levels. Built on Infineon's OptiMOS 5 trench technology, the device achieves best-in-class figure-of-merit (R<sub>DS(on)</sub> x Q<sub>g</sub>) for the 80 V class. The PG-HSOF-8-1 (TOLL 10x12) package exposes the drain tab directly to the PCB copper, giving very low thermal resistance and enabling 375 W power handling when properly soldered to a sufficiently large copper thermal pad. Typical applications include 48 V automotive systems such as mild-hybrid inverter stages, high-current DC-DC converters, BLDC motor drives for e-mobility, electric power steering (EPS), and battery protection disconnects. The low R<sub>DS(on)</sub> directly reduces conduction loss, improving overall drive-train efficiency and thermal headroom. When designing with this part, ensure the PCB thermal pad layout follows Infineon's PG-HSOF-8-1 footprint guidelines to achieve the rated thermal performance. Gate-drive design must account for the 231 nC Q<sub>g</sub>; a 10 Ohm gate resistor is typically recommended to limit ringing and dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
The Infineon IAUT300N08S5N012ATMA2 is an automotive-grade, N-channel power MOSFET rated at 80 V drain-to-source voltage and 300 A continuous drain current (Tc), with an ultra-low on-resistance of 1.2 mΩ (typical at 10 V VGS), housed in a surface-mount PG-HSOF-8-1 (8-pin HSOF with tab) package optimized for high-current automotive switching. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently route high currents in power conversion circuits. It belongs to the broader hierarchy of discrete semiconductors, sitting between passive components and ICs in modern electronics, and is the foundational building block of synchronous buck converters, motor drives, and load switches in 12 V / 24 V / 48 V automotive systems. Unlike a relay or bipolar transistor, the MOSFET gates are driven entirely by voltage, requiring near-zero drive current and enabling MHz-class switching frequencies. Key features of this part include the OptiMOS™-5 80 V technology platform, AEC-Q101 automotive qualification, a continuous drain current of 300 A at 25 °C case temperature, pulsed current handling above 1200 A, and a maximum power dissipation of 375 W (Tc). The PG-HSOF-8-1 package exposes the drain tab as a large thermal pad, yielding junction-to-case thermal resistance values that support very high transient current loads. Logic-level compatibility is not specified - the standard gate drive is 10 V VGS, which suits 12 V automotive supply rails after a charge-pump or gate-driver stage. The device is intended for high-current synchronous rectification, battery protection, and motor-control switching in mild-hybrid (48 V) and conventional 12 V automotive power nets. Its 1.2 mΩ R<sub>DS(on)</sub> minimizes conduction loss, while the robust avalanche rating and dv/dt capability ensure reliable switching under harsh transients. The optimized internal cell structure also reduces gate charge (Qg) for fast switching transitions. Typical applications include 12 V/48 V automotive load switches, electric power steering (EPS) inverter stages, brake-by-wire and electro-mechanical braking modules, DC-DC converter synchronous rectifiers, and battery disconnect switches in mild-hybrid electric vehicles. The automotive-grade qualification makes it the preferred choice for safety-critical body and chassis ECUs. When designing with this part, ensure the gate driver can source/sink sufficient peak current for fast Qg transitions, and that the PCB layout provides enough copper area to dissipate the expected I²R losses at the operating duty cycle. Use Kelvin-source connections where possible to avoid dv/dt-induced turn-on of the high-side device in a half-bridge. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a one-stop view of the part for sourcing decisions.
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon
The Infineon IAUT300N08S5N014ATMA1 is an automotive-grade N-channel MOSFET rated for 80 V VDS and 300 A continuous DC drain current, with an ultra-low typical on-resistance of 1.4 mΩ at VGS=10 V, packaged in the surface-mount PG-HSOF-8-1 (8-pin + tab) HSOF footprint and qualified to AEC-Q101. The part belongs to Infineon's IAUT/OptiMOS 5 family and is screened for MSL1 moisture sensitivity with 260 °C peak reflow compatibility and a maximum 175 °C operating junction temperature. A power MOSFET is a voltage-controlled majority-carrier switch in which a gate-source electric field modulates the conductance of a conducting channel between source and drain. N-channel enhancement-mode MOSFETs are the dominant switch topology in high-current DC-DC converters, motor drives, and synchronous-rectifier stages because their lower RDS(on) per unit silicon area delivers higher efficiency than P-channel counterparts. The IAUT family targets 48 V automotive subsystems (e.g., mild-hybrid ECUs, electric power steering, braking systems, brushless DC pumps and fans) where the 80 V drain rating provides ample headroom for transients on a nominal 48 V bus. Key features include 1.4 mΩ typical RDS(on) at VGS=10 V, 300 A continuous DC ID at TC=25 °C, 300 W maximum power dissipation at TC=25 °C, AEC-Q101 automotive qualification, MSL1 floor-life (unlimited at ≤30 °C/85 % RH), RoHS-compliant lead-free package, 100 % avalanche-tested die, and an ultra-low figure of merit (FOM = RDS(on) × Qg) for fast-switching applications. The tab is the drain, which must be soldered to a sufficiently large copper pour to act as both thermal via and electrical node. The die is built on Infineon's OptiMOS 5 trench technology, which lowers both on-resistance per cell and gate charge, thereby reducing conduction and switching losses simultaneously compared to earlier planar or stripe-cell generations. The PG-HSOF-8-1 package exposes the die directly to the PCB through a large source-clip lead frame, giving a junction-to-case thermal resistance typically below 0.5 °C/W and enabling the 300 W dissipation rating when the PCB thermal path is properly designed. Typical applications include 48 V mild-hybrid automotive DC-DC converters, high-current brushless DC (BLDC) motor drives for electric power steering and water/oil pumps, automotive e-fuse and battery disconnect switches, synchronous rectification in telecom and server buck converters, and high-current solenoid/relay driver stages. The 80 V rating and 300 A pulse capability also suit industrial inverter sections operating from 24-48 V battery rails. When designing with this part, keep the switching-node loop area minimal to control parasitic inductance and voltage overshoot, use a gate driver capable of sourcing/sinking 1-2 A peak to charge Qg quickly, and lay out at least 100-200 cm² of 2 oz copper on the drain tab to stay below the SOA envelope at high DC currents. This page synthesizes distributor stock and pricing, AEC-Q101/OptiMOS family context, drop-in alternatives in the same PG-HSOF-8-1 footprint, and practical thermal/SOA design notes that are not contained in the manufacturer datasheet alone.
IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUT300N10S5N015ATMA1 is a 100 V N-channel OptiMOS 5 power MOSFET rated for 300 A continuous drain current (Tc) and 375 W power dissipation, housed in a surface-mount PG-HSOF-8-1 package with exposed metal tab. It features an ultra-low on-state resistance of 1.5 mΩ (typical at VGS=10 V) and AEC-Q101 automotive qualification, making it purpose-built for high-current automotive switching. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch optimized for switching and conducting large currents at high efficiency. It belongs to the power-management transistor family, sitting below wide-bandgap devices (GaN, SiC) and above small-signal MOSFETs in the power-electronics taxonomy. The MOSFET's low R<sub>DS(on)</sub> directly determines conduction losses: P = I² × R<sub>DS(on)</sub>, so a 1.5 mΩ part dissipating 300 A loses approximately 135 W purely in conduction. Key features include 1.5 mΩ typical R<sub>DS(on)</sub> at VGS=10 V, ±20 V gate-source rating, and 100% avalanche-tested reliability per Infineon's OptiMOS 5 process. The device is AEC-Q101 qualified for automotive environments, supports MSL1 reflow up to 260°C peak, and operates across 175°C junction temperature. The OptiMOS 5 generation uses Infineon's latest trench-cell technology to lower switching losses versus earlier OptiMOS generations. The PG-HSOF-8-1 package provides a large exposed metal drain tab with very low thermal resistance (~0.4°C/W typical), enabling 375 W dissipation with proper PCB thermal via design. The footprint is optimized for high-current automotive PCB layouts where paralleling and copper-cooling area are critical. Compared with TO-220/TO-263 packages, PG-HSOF-8-1 achieves roughly half the R<sub>DS(on)</sub> per unit area thanks to its clip-bonded source-down construction. Typical applications include 48 V mild-hybrid inverter switching, high-current DC-DC converter primary-side switches, BLDC motor drivers in electric power steering and brake-by-wire, battery disconnect switches, and automotive e-fuse protection circuits. Its low R<sub>DS(on)</sub> reduces I²R losses in 300 A-class switching where every milliohm translates into significant thermal budget recovery. When designing with this device, calculate conduction loss P_cond = I_rms² × R<sub>DS(on)</sub> at your hottest operating temperature (R<sub>DS(on)</sub> typically doubles from 25°C to 175°C). Provide sufficient PCB copper area (at least 4 square inches of 2 oz copper with thermal vias) to keep junction rise below 50°C at full 300 A load. Gate-drive voltage should be 10 V for rated R<sub>DS(on)</sub>; lower VGS raises R<sub>DS(on)</sub> dramatically. This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives, and practical thermal design notes not found in the manufacturer datasheet alone.
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
The Infineon IAUTN04S7N003ATMA1 is an automotive-grade OptiMOS 7 N-channel power MOSFET rated at 40 V VDS, 350 A continuous drain current (Tj), and 357 W power dissipation (Tc), housed in a surface-mount PG-HSOF-8-9 package (also known as TOLL, 10x12 mm). It features an ultra-low RDS(on) of 0.24 mOhm at 25 °C and is qualified to AEC-Q101 standards for automotive applications. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. Power MOSFETs are a subclass of discrete semiconductors within the broader field-effect transistor family, used primarily as fast, efficient switching elements in power conversion circuits. The 40 V class is optimized for 12 V and 24 V automotive bus architectures, providing safe headroom over nominal rail voltages while minimizing conduction and switching losses. Within Infineon's OptiMOS 7 generation, this part represents the latest refinement in on-resistance per die area and figure-of-merit (FOM) optimization. Key specifications include a typical RDS(on) of 0.24 mOhm at VGS = 10 V, an avalanche-rated single-pulse drain current, and an intrinsic body diode with 83 ns typical reverse recovery time and 126 nC reverse recovery charge. The PG-HSOF-8-9 source-down package exposes the die on a large copper pad, achieving junction-to-case thermal resistance (RthJC) typically below 0.45 °C/W, which enables very high current handling without external heatsinking in well-designed PCBs. Architecturally, the device uses Infineon's OptiMOS 7 trench technology with a 30 V-or-above rated cell platform optimized for 40 V applications. The reduced gate charge (Qg) and output capacitance (Coss) profile yields low switching losses at high frequencies, enabling smaller magnetics in DC-DC converters. The part supports both hard-switched and soft-switched topologies, and the integrated body diode is robust enough for use as a freewheeling element in buck converters and OR-ing applications. Typical applications include 12 V / 24 V automotive electric power steering (EPS), brushless DC (BLDC) motor drives, battery management system (BMS) protection, high-current DC-DC converters, and electric vehicle (EV) traction inverters (low-voltage side). The combination of low RDS(on) and automotive qualification makes it well-suited as a high-side or low-side switch in safety-critical modules. When designing with this MOSFET, prioritize minimizing parasitic source inductance by using a Kelvin-source-connected footprint and placing gate-drive decoupling directly at the gate pin. The low RDS(on) is only realized with VGS = 10 V; logic-level gate drive is insufficient for full enhancement. Thermal design must rely on the bottom-exposed pad with sufficient copper area to keep Tj below 150 °C at worst-case SOA. This page synthesizes Infineon datasheet parameters, distributor pricing across DigiKey, Mouser, and Arrow, and drop-in alternatives from the OptiMOS 7 family plus competing 40 V TOLL parts - engineering content not assembled on any single distributor page.
IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon
The Infineon IAUTN04S7N004ATMA1 is an automotive-grade OptiMOS™7 N-channel power MOSFET rated at 40 V VDS, 0.38 mΩ maximum RDS(on), and 350 A continuous drain current (Tj), dissipating up to 255 W at Tc in a surface-mount PG-HSOF-8-8 (TOLL 10x12) package. Built on Infineon's latest OptiMOS 7 trench technology, it delivers class-leading figure-of-merit (FOM) for 40 V automotive systems, minimizing conduction and switching losses in high-current 12 V/24 V battery applications. A power MOSFET is a voltage-controlled semiconductor switch that uses a gate signal to modulate conduction between its drain and source terminals, enabling efficient power conversion in switched-mode topologies. As a category, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) belong to the broader family of discrete transistors within power semiconductors, sitting alongside IGBTs and thyristors. The 40 V OptiMOS 7 generation specifically targets low-voltage automotive powertrain, chassis, and body-electronics applications where efficiency, thermal performance, and reliability directly affect vehicle range and system cost. The IAUTN04S7N004's 0.38 mΩ RDS(on) minimizes I²R losses at high currents, while the optimized gate-charge (Qg) and low Qgd/Qgs ratios reduce switching losses in high-frequency DC-DC and BLDC motor-drive stages. Its AEC-Q101-qualified construction, lead-free PG-HSOF-8-8 package with exposed top-cooling pad, and 175°C maximum junction temperature support the harsh automotive under-hood environment. The device also features a logic-level gate-threshold compatible with microcontroller GPIO drivers. Typical applications include 12 V/24 V automotive BLDC motor drives (EPS, pumps, fans), 48 V mild-hybrid DC-DC converters, battery protection switches, and high-current solenoid/relay drivers. The combination of very low on-resistance and surface-mount TOLL footprint enables compact, high-power-density designs where traditional D2PAK parts would be too large. When designing with the IAUTN04S7N004, pay close attention to PCB layout: minimize the high-current loop (drain-source) and gate-drive loop to control parasitic inductance that causes voltage overshoot during turn-off. A 10 Ω gate resistor typically suffices; values below 5 Ω risk ringing, while values above 50 Ω slow switching and increase losses. Thermal management via the top-exposed thermal pad is essential at sustained currents above 200 A. The TOLL (TO-Leadless) 10x12 mm package provides an RthJC substantially lower than DPAK, enabling 255 W power dissipation with proper PCB copper thermal vias under the exposed pad. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not collected in the manufacturer datasheet alone.
IAUTN04S7N005ATMA1 - 40V 0.44mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUTN04S7N005ATMA1 is an automotive-grade N-channel power MOSFET built on Infineon's OptiMOS™7 40 V technology platform, housed in the surface-mount PG-HSOF-8-8 (TOLL) package with a 10 mm × 12 mm footprint. It is rated for 40 V VDS, 0.44 mΩ maximum RDS(on) at 10 V VGS, and continuous drain current up to 350 A at the silicon junction. The device is qualified to AEC-Q101 for automotive power-converter applications. A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical energy in switching power supplies, motor drives, and battery-management systems. The OptiMOS™7 family represents Infineon's latest-generation 40 V trench MOSFET process, positioned within the broader category of N-channel power MOSFETs, which themselves belong to the larger family of discrete semiconductors. Lower RDS(on) reduces conduction loss directly, while a smaller figure of merit (FOM = RDS(on) × Qg) reduces switching loss - both critical for high-frequency, high-current automotive designs. Key features include an ultra-low on-state resistance of 0.44 mΩ (max) at VGS = 10 V, low gate charge optimized for high-frequency switching, an avalanche-rated single-pulse body diode, and an operating junction temperature range up to 175 °C. The PG-HSOF-8-8 package exposes the drain on the top side for direct cooling via an attached heatsink or PCB copper inlay, enabling very high current density in compact layouts. The IAUTN04S7N005 uses Infineon's latest-generation 40 V OptiMOS™7 cell architecture, which delivers roughly a 30% RDS(on) reduction versus the previous OptiMOS™5 generation at the same die area. The TOLL (TO-Leadless) package eliminates the traditional leads and instead uses wide copper tabs, which simultaneously reduces package resistance, improves thermal impedance (junction-to-case), and minimizes parasitic inductance in high-di/dt switching loops. Typical applications include 12 V/24 V automotive DC-DC converters (e.g., 48 V mild-hybrid buck stages), traction inverter auxiliary rails, e-mobility battery disconnect switches, electric power steering (EPS) controllers, and high-current OR-ing / load-switch circuits. The part is also well suited to industrial high-density point-of-load converters. When designing with the IAUTN04S7N005, pay particular attention to PCB layout: minimize the high-di/dt loop (VIN → MOSFET → GND) by placing input capacitors and the MOSFET on the same copper layer with the shortest possible path. Use Kelvin-source connection where the gate-driver return attaches directly to the source tab, bypassing the source inductance. Maximum junction-to-ambient thermal resistance depends strongly on the PCB copper area beneath the exposed pad. This page synthesizes distributor pricing, drop-in alternatives, and practical layout guidance that complements the manufacturer's datasheet. Pricing reflects current stock across DigiKey, Mouser, and element14.
IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
The Infineon IAUTN12S5N017ATMA1 is a 120 V N-channel OptiMOS™ 5 power MOSFET in a surface-mount PG-HSOF-8-1 (HSOF-8) package, with a maximum drain current of 314 A and an ultra-low R<sub>DS(on)</sub> of 1.7 mΩ at V<sub>GS</sub>=10 V. It is qualified to 175 °C operating junction temperature and targeted at automotive HV-LV DC-DC converters, where high efficiency and small PCB footprint are mandatory. An N-channel power MOSFET is a voltage-controlled majority-carrier device whose drain current is modulated by the gate-source voltage V<sub>GS</sub>. Once V<sub>GS</sub> exceeds the threshold voltage (typically 2-4 V), a conductive channel forms in the drift region, allowing current to flow from drain to source. The IAUTN12S5N017 belongs to the OptiMOS 5 120 V family, which sits in the broader N-channel MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor taxonomy. The OptiMOS 5 generation uses a trench-gate technology optimised for low R<sub>DS(on)</sub> * figure-of-merit (FOM) and improved switching performance versus prior generations. Key specifications include R<sub>DS(on)</sub>_max of 1.7 mΩ at V<sub>GS</sub>=10 V, continuous drain current of 314 A at 25 °C case, gate charge Q<sub>g</sub> characterised up to 100 A pulsed drain current, and 175 °C maximum junction temperature. The HSOF-8 package features a large exposed source pad that doubles as the electrical source connection and as a low-thermal-resistance heatsink path, enabling the device to handle high currents on FR4 boards without an external heatsink. Architecturally, the device uses Infineon's latest-generation trench cell, which minimises both the on-state resistance and the gate-charge capacitance. Compared with the previous OptiMOS 4 generation, this typically yields ~30% lower conduction losses and faster switching at the same R<sub>DS(on)</sub> rating, allowing higher switching frequencies in DC-DC converters and therefore smaller magnetics. Typical applications include 48 V-12 V HV-LV DC-DC converters in mild-hybrid (48 V) automotive systems, telecom and server intermediate bus converters, high-current motor drives, hot-swap / OR-ing switches in 48 V backplanes, and battery protection / load disconnect circuits. The 120 V drain-source rating provides ample headroom above 48 V nominal buses (with switching transients reaching ~70-80 V). When designing with this part, place the gate-drive resistor within 5 mm of the gate pad and use a Kelvin-source connection (pin 2 in HSOF-8) to avoid source-inductance-induced gate-oscillation. A gate-drive voltage of 8-10 V is recommended for full enhancement into the 1.7 mΩ region; 4.5 V drive degrades R<sub>DS(on)</sub> significantly. This page synthesises distributor pricing, drop-in alternatives, and practical thermal design notes not collected in any single manufacturer or distributor product page.
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
The Infineon IAUZ18N10S5L420ATMA1 is a 100 V N-channel power MOSFET rated at 18 A continuous drain current, with a maximum on-resistance of 42 mΩ, housed in a 3.3 x 3.3 mm S3O8 (PG-TSDSON-8-32) surface-mount package. It is part of Infineon's automotive-grade OptiMOS 5 100 V family, qualified to AEC-Q101 for use in automotive powertrain, LED lighting, and DC-DC converter applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently switch or amplify signals in power electronics. Within the power semiconductor hierarchy, a MOSFET sits between IGBTs and standard FETs; OptiMOS 5 represents Infineon's fifth-generation optimized trench MOSFET process that delivers the lowest figure-of-merit (FOM = RDS(on) × Qg) in the 100 V class. This positions it within the broader class of voltage regulators, motor drivers, and DC-DC converters used in power management subsystems. Key features of this device include a 42 mΩ maximum RDS(on) at VGS = 10 V, low gate charge (Qg typ. 8.5 nC), low output charge (Qoss), an integrated body diode optimized for synchronous rectification, and a maximum junction temperature of 175 °C. The S3O8 (PG-TSDSON-8-32) package offers a Kelvin-source connection that reduces gate-drive parasitic effects and enables 30 W of continuous power dissipation with proper PCB thermal design. The IAUZ18N10S5L420 uses Infineon's latest 100 V OptiMOS 5 trench technology, which achieves the lowest specific on-resistance per unit area in its class. The 8-pin PG-TSDSON-8-32 package with exposed drain pad provides a typical thermal resistance (RthJA) of approximately 50 °C/W on a 1-inch² copper area, enabling high-current operation in compact automotive modules. Typical applications include automotive 48 V mild-hybrid DC-DC converters, LED headlight drivers, electric power steering (EPS) motor control, and high-current USB-PD power switches. The part's automotive qualification also makes it suitable for body control modules and battery management systems (BMS) in electric vehicles. When designing with this part, prioritize PCB layout to maximize the drain-pad copper area; the S3O8 package's thermal performance is dominated by PCB copper, not the package itself. For high-frequency switching (>100 kHz), use a gate resistor to control ringing, and place the gate drive loop area as small as possible to minimize parasitic inductance. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design guidance not consolidated on the manufacturer datasheet, including side-by-side comparison of OptiMOS 5 family members and competitor cross-brand equivalents in the S3O8 footprint.
IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUZ20N08S5L300ATMA1 is an 80 V N-channel power MOSFET rated for 20 A continuous drain current (Tc) and 30 W power dissipation, built on Infineon's OptiMOS-5 technology and housed in a 3.3 x 3.3 mm PG-TSDSON-8-32 (S3O8) surface-mount package. The device features a typical on-state resistance of 30 mΩ at 10 A / 10 V, an input capacitance of approximately 599 pF at 40 V, and a gate charge of around 10.5 nC at 10 V, making it well suited for high-frequency switching power stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or regulate current in power electronics. It belongs to the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs, and is the workhorse of modern switch-mode power supplies (SMPS), motor drives, and load switches. OptiMOS-5 is Infineon's fifth-generation trench MOSFET platform, delivering lower Rds(on) per unit silicon area, faster switching, and lower figure-of-merit (FOM = Rds(on) x Qg) than prior generations. Key features include an 80 V drain-source breakdown voltage suitable for 12 V and 24 V automotive buses (including 48 V mild-hybrid transients up to 80 V), a 175°C maximum operating junction temperature, and AEC-Q101 qualification for automotive use. The combination of low Rds(on) (30 mΩ) and small S3O8 footprint (3.3 x 3.3 mm) enables high power density designs. Compared to standard MOSFETs, OptiMOS-5 reduces switching losses by roughly 30-50%, which directly translates to higher efficiency and lower thermals in the same board area. Typical applications include LED lighting drivers, automotive powertrain ECUs, body-electronics modules, battery protection circuits in 12 V/24 V systems, and high-side/low-side buck or half-bridge converters. The combination of low charge and small package is particularly attractive in DC-DC converters where switching losses dominate efficiency at high frequencies. When designing with this part, keep the gate-drive voltage at 10 V to fully enhance the channel and achieve the rated 30 mΩ Rds(on). At lower gate voltages (e.g., 4.5 V), Rds(on) increases significantly and can cause thermal runaway. Always observe the 175°C junction temperature limit and provide adequate copper cooling. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, with all values cross-referenced against distributor listings and the Infineon part page.
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ30N06S5L140ATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET rated for 30 A continuous drain current (Tj) and 33 W power dissipation (Tc), housed in a compact surface-mount PG-TSDSON-8-32 (also known as S3O8, 3x3 mm) package. It features a maximum on-resistance of 14 mΩ at VGS=10 V and combines low gate charge, low QGD, and minimized parasitic capacitances to deliver best-in-class Figure-of-Merit (FOM) for switching-converter and motor-drive efficiency. The device is qualified to -55°C to 175°C Tj operation and is part of the automotive-grade (AEC-Q101) OptiMOS 5 60 V family. What is an OptiMOS 5 MOSFET? OptiMOS is Infineon's trench power-MOSFET platform, and the OptiMOS 5 generation represents the fifth major step in that platform, optimized for synchronous rectification in switch-mode power supplies (SMPS), DC-DC converters, and motor control. The 60 V OptiMOS 5 family targets applications such as LED lighting drivers, ADAS power trees, USB-PD, and 48 V mild-hybrid subsystems, where low RDS(on) and low switching loss directly translate into cooler running parts and higher system efficiency. The MOSFET sits in the broader taxonomy: power MOSFET -> discrete semiconductor -> semiconductor, and as an N-channel enhancement-mode device it requires a positive gate drive to turn on. Key differentiating specifications include a 14 mΩ maximum RDS(on) at VGS=10 V, a total gate charge (Qg) of 12.2 nC at VGS=10 V, and a typical output capacitance (Coss) of 888 pF at VDS=30 V. The PG-TSDSON-8-32 footprint occupies only 3x3 mm of board area and uses a leadless S3O8 package with an exposed drain pad that provides both low thermal resistance and a low-source-inductance connection. Together these attributes minimize both conduction and switching losses, which is the central design goal of the OptiMOS 5 family. The internal architecture uses a deep-trench cell design that increases channel density per unit area while lowering the specific on-resistance (RDS(on)*Area). The result is a part that achieves 14 mΩ in a much smaller footprint than planar MOSFETs of comparable rating, and that can be driven with standard logic-level gate signals thanks to a typical VGS(th) in the 2.2 V neighborhood. The automotive-grade qualification (AEC-Q101) means the part is validated for harsh thermal and humidity stress typical of under-the-hood automotive environments. Typical applications include synchronous-rectification stages in 48 V-to-12 V DC-DC converters, high-side and low-side switches in motor-driver H-bridges, USB-PD and battery-management power-path FETs, and hot-swap controllers in 12 V/24 V industrial buses. The 60 V drain rating gives substantial margin for 24 V industrial rails and for the ringing seen on 12 V automotive load-dump transients. When designing with this part, place the gate-drive loop area as small as possible to minimize ringing, use a 10 Ω gate resistor to control dV/dt, and exploit the bottom-source/PCB-drain connection to spread heat through copper pours. Make sure VGS never exceeds the ±20 V absolute maximum, and prefer a 10 V drive when full RDS(on) performance is required. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond what the manufacturer datasheet provides in isolation.
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ30N08S5N186ATMA1 is an automotive-grade N-channel OptiMOS 5 Power MOSFET rated at 80 V drain-source voltage with an ultra-low on-state resistance of 18.6 mΩ typical, packaged in a surface-mount PG-TSDSON-8-32 (5x6 mm) outline. It is qualified to AEC-Q101 and targeted at 12 V and 24 V automotive battery systems, including body electronics, ADAS power distribution, and electric powertrain auxiliary rails. The S5N186 designation in the part number indicates its specific position within the OptiMOS 5 80 V family. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device where applying a positive gate-source voltage creates an inversion layer that conducts current between drain and source. MOSFETs are the fundamental building blocks of modern power electronics, sitting at the bottom of a taxonomy that includes: power MOSFET -> discrete semiconductor -> power switch -> power management component. Compared with bipolar transistors, MOSFETs offer faster switching, simpler gate drive, and lower conduction losses, making them dominant in switched-mode power conversion. Key features include 80 V VDS rating, 30 A continuous drain current (Tj), 41 W power dissipation at Tc, and an ultra-low RDS(on) of 18.6 mΩ at VGS=10 V. The PG-TSDSON-8-32 package provides a low thermal resistance footprint with an exposed drain pad for direct PCB heat spreading, and its gull-wing leads are compatible with automated optical inspection and standard reflow profiles. The part is qualified to AEC-Q101, the industry standard for automotive discrete semiconductors. The device is built on Infineon's OptiMOS 5 trench process technology, which combines a high cell density with a low-resistance substrate to minimize both conduction and switching losses. Compared to planar MOSFETs, the trench geometry shrinks the cell pitch and increases transconductance, delivering lower gate charge (Qg) for a given RDS(on). This results in lower drive losses at high switching frequencies, enabling smaller magnetics in DC-DC converters and reduced EMI in motor drive stages. Typical applications include automotive 12 V/24 V battery switching, ECU power management, LED lighting drivers, e-fuse and circuit protection blocks, ADAS sensor power rails, and motor control for pumps, fans, and small actuators. The 80 V rating provides ample margin against 24 V load-dump transients per ISO 7637-2, while the low RDS(on) minimizes conduction loss and self-heating in high-current paths. Designers should size the gate drive circuit for the typical gate charge to ensure fast turn-on/turn-off and to minimize dead-time losses in synchronous topologies. The exposed drain pad must be soldered to a sufficiently large copper pour (typically >=1 oz copper over >=50 mm²) to keep junction temperature within the -55 °C to +175 °C automotive operating range. This page synthesizes distributor pricing, automotive-grade drop-in alternatives from the OptiMOS 5 family, and practical design notes not found in the manufacturer datasheet, including SOA guidance and PCB layout recommendations.
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ30N10S5L240ATMA1 is a 100 V N-channel power MOSFET in the OptiMOS 5 75V-120V family, rated for 30 A continuous drain current (Tc) and 24 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, housed in a surface-mount PG-TSDSON-8-32 (8-PowerTDFN) package with an exposed drain pad for low thermal resistance. It is part of Infineon's automotive-grade MOSFET portfolio and is qualified to AEC-Q101 for use in 12 V and 24 V automotive systems, including electric power steering, braking, body electronics, and DC-DC converter stages. An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses a gate-source electric field to modulate conduction between drain and source terminals. Within the semiconductor hierarchy it belongs to discrete transistors → MOSFETs → power MOSFETs → low-voltage trench MOSFETs. OptiMOS 5 is Infineon's fifth-generation trench technology, which optimizes figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) for high-frequency switching and reduced conduction loss, replacing earlier planar and earlier-trench generations. Key specifications include 100 V drain-source breakdown (V<sub>(BR)DSS</sub>), 24 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V (per the manufacturer datasheet), gate charge of 14 nC, and input capacitance of 832 pF at V<sub>DS</sub>=50 V. The PG-TSDSON-8-32 package provides a Kelvin-source connection and an exposed metal pad that simultaneously serves as the drain terminal and the primary thermal path to the PCB, enabling high current density in compact layouts. The part dissipates up to 45.5 W (Tc) under manufacturer-defined thermal conditions. Typical applications include automotive 12 V/24 V load switching, high-side and low-side switches in DC-DC buck/boost converters, motor drive half-bridges for pumps and fans, and reverse-battery protection circuits. The 100 V rating also provides ample transient margin for 24 V systems that experience load-dump events. Compared with the previous OptiMOS 3 generation, the IAUZ30N10S5L240 reduces R<sub>DS(on)</sub> by approximately 30% at the same die size, reducing conduction loss and improving thermal performance. When designing with this part, place gate-drive resistors close to the gate pin to limit ringing, and provide a 10 kΩ gate-source pull-down to prevent accidental turn-on during supply transients. The Kelvin-source pin must be bonded directly to the IC's source pad and to the gate-driver ground return to avoid source-induced gate-drive loss. This page synthesizes distributor pricing, drop-in alternatives, and PCB-level design notes beyond what appears in the manufacturer datasheet.
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ40N06S5L050ATMA1 is a 60 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 automotive process, delivering 90 A continuous drain current (Tj), 71 W power dissipation (Tc), and an industry-leading 5 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, packaged in a compact PG-TSDSON-8-33 surface-mount outline. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that converts digital gate drive into high-current load switching. Within the broader taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> power transistors; the N-channel enhancement-mode variant is the dominant polarity for low-side and high-side switching because electron mobility is roughly 2-3× higher than hole mobility, giving lower on-resistance per unit silicon area. The IAUZ40N06S5L050 belongs to the OptiMOS 5 60 V automotive family, optimized for synchronous rectification, DC-DC conversion, and motor drive. Key specifications include a gate charge Q<sub>G</sub> of 28.2 nC, gate threshold V<sub>GS(th)</sub> of 2.2 V at 29 µA, and an operating junction temperature range of -55 °C to +175 °C qualifying it for AEC-Q100 automotive environments. The OptiMOS 5 super-junction architecture reduces both conduction and switching losses simultaneously, enabling higher switching frequencies (≥100 kHz) and smaller magnetics in downstream converters. This device targets high-current automotive applications where PCB area is constrained but thermal performance cannot be compromised. The PG-TSDSON-8-33 package features an exposed drain pad that doubles as the thermal interface, allowing direct heat dissipation into the copper pour. Compared with traditional D²PAK or TO-220 packages of equivalent R<sub>DS(on)</sub>, the TSDSON-8-33 footprint is roughly 60% smaller while maintaining equivalent thermal resistance. Typical applications include 12 V/48 V automotive DC-DC converters, LED headlight drivers, ADAS power supplies, eMobility traction inverters, and battery management system (BMS) protection circuits. The part's combination of low R<sub>DS(on)</sub> and low Q<sub>G</sub> makes it particularly suited for synchronous rectification in high-frequency buck converters where both conduction loss and switching loss dominate the efficiency budget. When designing with this MOSFET, observe the SOA envelope carefully - pulsed drain current handling decreases rapidly at elevated V<sub>DS</sub>. Use a gate drive voltage of 10 V for full R<sub>DS(on)</sub> specification; driving at 4.5 V (logic level) approximately doubles conduction loss. The datasheet's thermal resistance value assumes a 2s2p FR4 PCB per JEDEC JESD51-5/-7 - actual in-application R<sub>θJA</sub> depends heavily on copper-pour area and airflow. This page synthesizes Infineon datasheet parameters, distributor pricing snapshots, and drop-in alternative recommendations not found in the standalone manufacturer datasheet - giving design engineers and procurement teams a single source for both technical evaluation and sourcing decisions.
IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ40N06S5N050ATMA1 is an N-channel automotive-grade OptiMOS 5 power MOSFET rated at 60 V drain-source voltage with a typical on-state resistance of 5 mΩ and continuous drain current up to 40 A, packaged in the industry-standard PG-TSDSON-8-33 (3.3 x 3.3 mm) surface-mount footprint. Built on Infineon's latest OptiMOS 5 60 V silicon platform, it delivers industry-leading FOM (RDS(on) × QG) and is AEC-Q101 qualified for automotive electronics. The device is supplied on tape and reel and targets high-efficiency synchronous rectification, DC-DC conversion, and motor drive stages. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in electronic circuits. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET technology, optimized for 60 V systems to deliver lower conduction loss, faster switching, and reduced gate charge versus previous generations. Within the broader taxonomy, this part is an N-channel enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor -> power management component. Key specifications include 5 mΩ typical RDS(on) at VGS=10 V, a maximum drain current (ID) of 40 A at TC, 71 W maximum power dissipation, and a gate threshold voltage typically around 1.7 V. The OptiMOS 5 cell structure provides exceptionally low QG and QGD, enabling high-frequency switching (>1 MHz) with minimized driver losses. The PG-TSDSON-8 package with exposed pad achieves low thermal resistance (~1.2 C/W RthJC) suitable for high-current surface-mount designs. Typical applications include 48 V automotive systems (mild-hybrid DC-DC converters), secondary-side synchronous rectification in isolated DC-DC topologies, BLDC motor drive H-bridges, and high-current load switching in power distribution units. The combination of low RDS(on) and small footprint enables higher power density designs. When designing with this device, ensure the gate driver can supply sufficient peak current (>1 A) to charge the input capacitance at the target switching frequency. Use Kelvin-source PCB layout when possible to minimize source-inductance-induced ringing, and keep the gate-loop area small to control EMI.
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUZ40N08S5N100ATMA1 is an 80 V N-channel power MOSFET built on Infineon's OptiMOS™-5 technology, rated for 40 A continuous drain current (Tc) and 68 W power dissipation in a compact PG-TDSON-8 (S3O8) surface-mount package. The part is automotive qualified (AEC-Q101), optimized for low RDS(on) of 10 mΩ at VGS=10 V and a maximum gate charge of 24.2 nC, making it well-suited for high-efficiency switching applications in 12 V and 24 V automotive powertrains. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify electrical signals in power conversion. N-channel MOSFETs like the IAUZ40N08S5N100 conduct when a positive gate-source voltage is applied, and they sit in the power semiconductor hierarchy between signal-level transistors and high-current IGBT modules. The OptiMOS family specifically targets synchronous rectification, motor drive, and DC-DC conversion where switching loss and conduction loss must both be minimized. Key specifications include a drain-source breakdown voltage of 80 V, a continuous drain current of 40 A at 25 °C case temperature, gate threshold voltage (VGS(th)) typically around 2.5 V to 3.5 V, and an input capacitance of approximately 1591 pF at 40 V. The PG-TDSON-8 package exposes the drain through the thermal pad, enabling direct PCB cooling with a very low junction-to-case thermal resistance and eliminating the need for an external heatsink in many applications. Architecturally, the device uses a trench-gate cell structure that reduces on-state resistance per unit silicon area while keeping gate charge low. The combination of low RDS(on) (10 mΩ), moderate Qg (24.2 nC), and a small 3.3 × 3.3 mm footprint gives an excellent figure of merit (FOM = RDS(on) × Qg) for high-frequency switching converters up to several hundred kHz. Typical applications include automotive LED lighting drivers, 12 V/48 V board-net converters, electric power steering (EPS), braking system pumps, and solenoid or relay drivers. The wide VDS rating also allows use as a protection switch in industrial 24 V systems and as the low-side switch in half-bridge motor drives. When designing with this part, ensure the gate driver can supply the 24.2 nC gate charge with adequate rise/fall times, and observe strict PCB layout practices (minimized source-loop inductance) to avoid voltage spikes that could exceed the 80 V rating. A small RC snubber or gate-source resistor often improves EMI in PWM-driven applications. This page synthesizes distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUZ40N10S5N130ATMA1 is a 100 V N-channel power MOSFET built on Infineon's OptiMOS 5 technology, rated for 40 A continuous drain current (Tc) and 68 W maximum power dissipation (Tc). It features an ultra-low typical R<sub>DS(on)</sub> of 10 mΩ (some sources cite 13 mΩ max in the datasheet title) in a compact 3.3 × 3.3 mm PG-TSDSON-8-33 (S3O8) surface-mount package, making it one of the most figure-of-merit-efficient 100 V FETs in its footprint class. The device is AEC-Q101 qualified for automotive reliability and supports a pulsed drain current (IDM) of 160 A for short-duration switching transients. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate field to modulate conduction between source and drain terminals. N-channel MOSFETs such as the IAUZ40N10S5N130 sit in the hypernym hierarchy discrete semiconductor → transistor → MOSFET → N-channel MOSFET → power MOSFET. Within Infineon's portfolio they belong to the OptiMOS 5 family, which targets high-frequency, low-loss switching in automotive and industrial converters. Key features include a maximum drain-source voltage V<sub>DS</sub> of 100 V, low gate charge for fast switching, an integrated body diode for inductive commutation, and automotive-grade reliability per AEC-Q101. The PG-TSDSON-8-33 package uses an exposed drain pad for top-side cooling, enabling direct PCB thermal dissipation without an external heatsink at moderate loads. R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> is specified at 13 mΩ maximum per the Infineon product page header. Technically, the device uses Infineon's latest-generation OptiMOS 5 super-junction trench technology, which achieves the lowest R<sub>DS(on)</sub> × Q<sub>g</sub> figure of merit in its voltage class. The result is reduced switching losses in high-frequency DC-DC converters and motor-drive half-bridges, plus lower conduction losses in synchronous rectification. This translates directly into higher system efficiency and smaller magnetics in switched-mode power supplies. Typical applications include automotive 48 V mild-hybrid DC-DC converters, LED lighting drivers, motor control and powertrain systems, synchronous rectification in telecom and server SMPS, and battery protection circuits in e-mobility. It is also widely used in industrial solar optimizers and high-current USB-PD sinks. Designers choose it where a 100 V rating margin and AEC-Q101 reliability are needed in a tiny 3.3 × 3.3 mm footprint. When laying out the PCB, place the source-sense Kelvin connection directly to the package source pad, keep the gate-loop area under 1 cm² to minimize ringing, and use 4-layer FR-4 with at least 2 oz copper on the top layer to spread heat from the exposed drain pad. At 68 W dissipation into a properly designed thermal land pattern, the device can sustain continuous operation without forced airflow. This page synthesizes distributor pricing, drop-in OptiMOS 5 alternatives, and practical layout guidance not collected in any single datasheet page, enabling faster design-in decisions for automotive and industrial power engineers.
IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon
The Infineon IAUZN04S7L025ATMA1 is an automotive-grade OptiMOS™-7 N-channel power MOSFET rated 40 V VDS, 2.56 mΩ maximum RDS(on), and continuous drain current up to 60 A (117 A pulsed at Tc), housed in a leadless PG-TSDSON-8-44 (S3O8) surface-mount package. This product targets high-current synchronous-rectification, OR-ing, hot-swap and motor-drive stages in 12 V and 24 V automotive ECUs where conduction loss dominates the thermal budget. What is an N-channel power MOSFET? An N-channel power MOSFET is a voltage-controlled majority-carrier switch that uses an insulated gate to modulate electron flow between drain and source. Compared with older planar trench MOSFETs, OptiMOS-7 technology shrinks the cell pitch and optimizes the super-junction structure to deliver lower figure-of-merit (RDS(on)×Qg) per unit silicon area, which is the key metric for high-frequency switching converters. Key features include 2.56 mΩ max RDS(on) at VGS=10 V, ultra-low gate charge Qg optimized for high-frequency operation, and an integrated gate-protection ESD structure. The S3O8 package exposes a wide thermal pad that achieves a junction-to-case thermal resistance in the single-digit mΩ·°C/W range, allowing direct PCB heatsinking with minimal copper area. The part is AEC-Q100 qualified and PPAP-capable, satisfying automotive ECU reliability requirements. From an architectural standpoint, OptiMOS-7 achieves its low RDS(on) through an advanced trench process combined with a thin wafer backside metallization that improves heat extraction. The result is a device that can replace larger TO-220 or TO-263 MOSFETs on the same PCB without re-routing the thermal layer. Typical applications include 12 V automotive ECU power distribution, electric power steering (EPS) half-bridges, DC-link discharge switches, and high-current USB-PD source paths. It is equally suited to industrial 24 V hot-swap controllers and telecom OR-ing. When designing with this MOSFET, prioritize gate-drive robustness: a 10 V gate-source drive is required to reach the rated RDS(on), and the switching node should be kept short to limit ringing. The exposed pad must be soldered to a continuous copper pour sized for the expected continuous current. This page synthesizes distributor stock, drop-in same-package alternatives, and practical PCB-layout guidance not consolidated in the Infineon datasheet.
IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUZN04S7L030ATMA1 is an automotive-grade OptiMOS™-7 N-channel power MOSFET rated at 40 V drain-source voltage with an ultra-low 3.05 mΩ maximum on-state resistance (at 10 V VGS) and continuous drain current of 60 A, packaged in the compact S3O8 (PG-TSDSON-8-44) 3x3 mm² surface-mount footprint. The device delivers 58 W power dissipation at Tc and supports 100 A pulsed drain current, providing ample headroom for transient loads in automotive 12 V systems. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source when a sufficient gate-source voltage is applied. Low-voltage N-channel MOSFETs like the IAUZN04S7L030 belong to the discrete semiconductor power-switch family, sitting below IGBTs and super-junction MOSFETs in the voltage hierarchy and above standard small-signal MOSFETs in current capability. They serve as the primary switching element in synchronous buck converters, ORing circuits, motor drives, and reverse-battery protection blocks. Key features of the IAUZN04S7L030 include best-in-class figure-of-merit (FOM = RDS(on) × Qg), reduced gate charge for high-frequency switching, integrated protection against avalanche and ESD events, and an exposed drain pad (pin 5) that doubles as a thermal dissipation path. The OptiMOS™-7 process technology reduces switching losses by approximately 30% compared to previous generations, allowing higher switching frequencies in SMPS designs without compromising efficiency. The device is qualified to AEC-Q101 for automotive applications and meets RoHS compliance. The S3O8 / PG-TSDSON-8-44 package features a low thermal resistance path through the bottom-exposed drain pad, enabling direct cooling via PCB copper. The 8-pin layout (drain, gate, source, and thermal pad) is optimized for high-current DC-DC converters, USB-PD/EPR power-path switches, and automotive LED drivers. The IAUZN04S7L030's 40 V rating provides generous margin above the 18 V maximum transients of automotive 12 V systems while staying well below the breakdown voltage. Typical applications include automotive 12 V board-net switching, synchronous rectification in isolated DC-DC stages, USB-PD high-current charging ports, e-fuse and hot-swap controllers, and high-current motor drive H-bridges. The wide safe operating area makes the part suitable for repetitive avalanche events in inductive load switching. When designing with this MOSFET, ensure VGS(th) is respected at cold temperatures (typ. 1.7 V) and that gate-drive voltage swings to at least 10 V for full RDS(on) performance. A gate-source resistor (typ. 10 kΩ) prevents floating-GS turn-on during transients. This page synthesizes distributor pricing from DigiKey and Mouser, parametric drop-in alternatives sourced from the same OptiMOS-7 family, and design notes not consolidated in the manufacturer datasheet.
IAUZN04S7N049ATMA1 - 40V OptiMOS-7 60A Auto MOSFET | Infineon
The Infineon IAUZN04S7N049ATMA1 is an N-channel 40V automotive power MOSFET built on Infineon's OptiMOS-7 process technology, rated for 60A continuous drain current in a PG-TSDSON-8-44 (5x6 mm) surface-mount package. According to the Infineon datasheet for the IAUZN04S7N049 family, this part delivers an ultra-low R<sub>DS(on)</sub> of 1.2 to 4.9 mOhm, with 14A continuous current at ambient (Ta) and up to 70A pulsed at T<sub>j</sub>. The device is qualified to AEC-Q101 standards for automotive power-train and BLDC drive applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals. Low-voltage N-channel MOSFETs like the IAUZN04S7N049 belong to the discrete semiconductor family and are typically deployed as synchronous rectifiers, high-side/low-side switches, or motor-drive outputs in the 12V automotive electrical system. Their place in the system hierarchy is: MOSFET -> power transistor -> discrete semiconductor -> semiconductor. Key features of the IAUZN04S7N049ATMA1 include its low 1.2-4.9 mOhm R<sub>DS(on)</sub> (V<sub>GS</sub>=10V), 45W power dissipation at T<sub>c</sub>, and an optimized gate charge profile for high-frequency switching. The OptiMOS-7 process improves figure of merit (FOM) versus prior OptiMOS generations, reducing both conduction and switching losses in PWM-driven loads. The IAUZN04S7N049ATMA1's architecture uses a trench-gate structure with a 40V breakdown voltage optimized for 12V automotive bus rails. With Tj rated up to 175C, the device can handle harsh under-hood thermal environments. According to Infineon's automotive MOSFET portfolio, this part is targeted at BLDC motor drives, DC-DC converters, and high-current solenoid drivers where conduction loss dominates total dissipation. Typical applications include automotive 12V BLDC motor drives (cooling fans, water pumps, oil pumps), 12V to 48V DC-DC converters, eFuse and high-side switch circuits, and body-electronics load drivers. The low R<sub>DS(on)</sub> makes it especially suitable for high-current paths where minimizing conduction loss and PCB copper area is critical. Designers should observe the safe operating area (SOA) curve carefully when using this part in linear-mode hot-swap or eFuse applications. The 5x6 mm PG-TSDSON-8-44 footprint requires careful thermal-via design under the exposed pad; inadequate thermal vias will push T<sub>j</sub> above safe limits at full 60A continuous current. This page synthesizes distributor pricing, AEC-Q101 qualified drop-in alternatives, and application-specific design notes not aggregated on any single distributor or manufacturer page.
IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUZN08S7L177ATMA1 is an automotive-grade OptiMOS™-7 N-channel power MOSFET rated at 80 V VDS, 35 A continuous drain current (Tj) and 45 W power dissipation (Tc), housed in a surface-mount PG-TSDSON-8-44 (S3O8, 3x3 mm²) package with a maximum on-resistance of 17.7 mΩ. Designed for high-efficiency switching in 12 V / 24 V / 48 V automotive and industrial power trains, the part belongs to Infineon's latest-generation OptiMOS 7 family which delivers benchmark figure-of-merit (FOM = RDS(on)·Qg) for high-frequency DC-DC and motor-drive topologies. A power MOSFET is a voltage-controlled majority-carrier switch used to convert and route energy in switched-mode power supplies (SMPS), motor drives, load switches and protection circuits. Within the broader component taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> field-effect transistors, and OptiMOS 7 represents Infineon's automotive-qualified 30 V-800 V power MOSFET platform optimized for low conduction loss, low switching loss and high avalanche ruggedness. Key features include a 17.7 mΩ maximum RDS(on) at VGS=10 V, an ultra-low gate charge Qg typical of the OptiMOS 7 generation, logic-level VGS(th) for direct microcontroller drive, and 100% Rg and UIS tested. The automotive-grade qualification makes the device suitable for AEC-Q101 environments, while the 3x3 mm² S3O8 footprint enables compact PCB layouts for high-density power designs. The OptiMOS 7 silicon uses an advanced trench MOSFET architecture with optimized cell pitch to balance RDS(on) and switching charge, delivering higher efficiency than OptiMOS 5/6 predecessors at the same footprint. Low thermal resistance to case (RthJC) supports high continuous currents, and the leadless PG-TSDSON-8-44 package provides low package inductance which is critical for fast-switching half-bridge and synchronous-rectifier stages. Typical applications include 48 V mild-hybrid DC-DC converters, automotive e-fuse protection, battery management system (BMS) charge/discharge switches, LED driving front stages, and high-side/low-side motor control H-bridges. The 80 V rating gives ample headroom above 48 V bus transients. When designing, ensure VGS drive is firmly in the 10 V enhancement region for lowest RDS(on), use a gate-source resistor to suppress parasitic oscillation, and observe land-pattern recommendations in the datasheet to keep the S3O8 thermal pad soldered for proper heat extraction. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet to support faster BOM decisions.
IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon
The Infineon IAUZN10S7L289ATMA1 is an Automotive-grade OptiMOS™-7 N-channel power MOSFET rated at 100 V drain-source voltage, 27 A continuous drain current (Tj), and 45 W power dissipation (Tc), housed in the compact PG-TSDSON-8-44 (S3O8, 3x3 mm²) surface-mount package. The part delivers a maximum on-state resistance (RDS(on)) of 28.9 mΩ and targets high-efficiency automotive power conversion. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for power conversion and switching. N-channel MOSFETs conduct when a positive gate-source voltage is applied and are the dominant technology in low-voltage, high-current power stages. The OptiMOS-7 family sits in Infineon's power MOSFET hierarchy (OptiMOS-7 > OptiMOS Power-MOSFET > power semiconductor > discrete semiconductor), engineered for automotive AEC-Q100 qualified applications with optimized figure-of-merit (FOM = RDS(on) × Qg). Key features include a maximum RDS(on) of 28.9 mΩ at VGS=10 V, 100 V VDS rating, 27 A continuous ID (Tj), and 45 W power dissipation. The S3O8 (3x3 mm) package footprint offers an excellent power-density ratio, enabling compact DC-DC converter and motor-drive designs. The automotive-grade qualification makes this part suitable for safety-critical systems. The OptiMOS-7 technology uses an advanced trench-gate structure that minimizes conduction losses and gate charge, improving switching performance. Compared to previous OptiMOS generations, the -7 family delivers lower RDS(on) × Qg figure-of-merit, enabling higher switching frequencies and smaller magnetics in SMPS designs. The 100 V rating also provides ample headroom for 48 V automotive bus rails and telecom hold-up applications. Typical applications include automotive 48 V DC-DC converters, electric power steering (EPS), braking system motor drivers, LED headlamp drivers, and high-current OR-ing switches. The automotive-grade qualification extends to body electronics modules where AEC-Q100 compliance is required for OEM acceptance. When designing with this device, ensure adequate PCB copper area for thermal dissipation. At 27 A continuous current, even with 28.9 mΩ RDS(on) (≈ 21 W conduction loss), a substantial thermal pad or copper pour is required to keep the junction temperature below the 175 °C limit. Gate drive should swing fully to 10 V for lowest RDS(on). This page synthesizes distributor pricing, parametric drop-in alternatives, and practical thermal/PCB design notes not found in the manufacturer datasheet.