1EDN7511BXUSA1 vs 1EDN7146GXTMA1 对比

详细并排对比 1EDN7511BXUSA1 出自 Infineon 和 1EDN7146GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ 量产中

规格对比

参数 1EDN7511BXUSA1 1EDN7146GXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $1.05
Driver Type Low-Side, Single Channel High-side, single-channel
Number of Drivers 1 1
输出数量 1 —
Configuration Inverting, Non-Inverting —
Peak Source Current 4 A —
Peak Sink Current 8 A —
上升时间 [DATA_NEEDED: rise time ns] —
下降时间 4.5 ns —
Propagation Delay ±5 ns (matched) —
工作电源电压 [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS —
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
工作温度范围 -40 C to +150 C —
封装 PG-SOT23-6-2 (6-pin SOT-23) PG-VSON-10-4
安装类型 Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Logic Type — Non-Inverting
Input Type — TDI (Truly Differential Inductor)
Maximum Bootstrap Voltage (VB) — 200 V
Supply Voltage (VCC) — 4.5 V to 20 V
Source/Sink Drive Current — 500 mA / 500 mA
Gate Drive Voltage — Up to 11 V (typ)
Propagation Delay (typ) — 40 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
UVLO (VCC) — Yes
UVLO (VB) — Yes
Bootstrap Diode — Integrated
工作温度 — -40 C to +125 C
MSL 等级 — 1

数据手册与资源

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