1EDN7511BXUSA1 vs 1EDN7146GXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7511BXUSA1 by Infineon and 1EDN7146GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ Active

Specification Comparison

Parameter 1EDN7511BXUSA1 1EDN7146GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Low-Side, Single Channel High-side, single-channel
Number of Drivers 1 1
Number of Outputs 1 —
Configuration Inverting, Non-Inverting —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Rise Time [DATA_NEEDED: rise time ns] —
Fall Time 4.5 ns —
Propagation Delay ±5 ns (matched) —
Operating Supply Voltage [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS —
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
Operating Temperature Range -40 C to +150 C —
Package PG-SOT23-6-2 (6-pin SOT-23) PG-VSON-10-4
Mounting Type Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
RoHS Status Compliant Compliant
Lead-Free Yes —
Logic Type — Non-Inverting
Input Type — TDI (Truly Differential Inductor)
Maximum Bootstrap Voltage (VB) — 200 V
Supply Voltage (VCC) — 4.5 V to 20 V
Source/Sink Drive Current — 500 mA / 500 mA
Gate Drive Voltage — Up to 11 V (typ)
Propagation Delay (typ) — 40 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
UVLO (VCC) — Yes
UVLO (VB) — Yes
Bootstrap Diode — Integrated
Operating Temperature — -40 C to +125 C
MSL Level — 1

Datasheets & Resources

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