2ED2106S06FXUMA1 vs 1ED3142MC12HXUMA1 对比

详细并排对比 2ED2106S06FXUMA1 出自 Infineon 和 1ED3142MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 量产中

规格对比

参数 2ED2106S06FXUMA1 1ED3142MC12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $1.32
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) Inverting, Non-Inverting
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns 40 ns
输出数量 2 (1 high-side, 1 low-side) 2 (separate source/sink)
Number of Drivers 2 —
引脚数 8 —
封装 PG-DSO-8-69 (DSO-8) PG-DSO-8 (PG-LDSO-8-1)
安装类型 Surface Mount Surface Mount
Bootstrap Diode Integrated —
工作温度范围 -40C to +125C —
Packaging Tape & Reel —
输出类型 Half-Bridge, Non-Inverting —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

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