2ED2106S06FXUMA1 vs 2EDL6014ACG2DXTMA1 对比

详细并排对比 2ED2106S06FXUMA1 出自 Infineon 和 2EDL6014ACG2DXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 量产中

规格对比

参数 2ED2106S06FXUMA1 2EDL6014ACG2DXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $1.18
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns —
输出数量 2 (1 high-side, 1 low-side) —
Number of Drivers 2 —
引脚数 8 —
封装 PG-DSO-8-69 (DSO-8) 11-WQFN (2.2 x 2.2 mm) with exposed pad
安装类型 Surface Mount Surface Mount
Bootstrap Diode Integrated —
工作温度范围 -40C to +125C —
Packaging Tape & Reel —
输出类型 Half-Bridge, Non-Inverting —
Driver Type — Half-Bridge Gate Driver
Number of Channels — 2 (high-side + low-side)
输出配置 — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
工作温度 — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

数据手册与资源

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