2ED2106S06FXUMA1 vs 2EDL6014ACG2DXTMA1 Comparison

Detailed side-by-side comparison of 2ED2106S06FXUMA1 by Infineon and 2EDL6014ACG2DXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2ED2106S06FXUMA1 2EDL6014ACG2DXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns —
Number of Outputs 2 (1 high-side, 1 low-side) —
Number of Drivers 2 —
Number of Pins 8 —
Package PG-DSO-8-69 (DSO-8) 11-WQFN (2.2 x 2.2 mm) with exposed pad
Mounting Type Surface Mount Surface Mount
Bootstrap Diode Integrated —
Operating Temperature Range -40C to +125C —
Packaging Tape & Reel —
Output Type Half-Bridge, Non-Inverting —
Driver Type — Half-Bridge Gate Driver
Number of Channels — 2 (high-side + low-side)
Output Configuration — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Operating Temperature — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

Datasheets & Resources

Browse All Products Create BOM Request Quote