2ED21834S06JXUMA1 vs 2ED2108S06FXUMA1 对比

详细并排对比 2ED21834S06JXUMA1 出自 Infineon 和 2ED2108S06FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED21834S06JXUMA1 2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 ✓ 量产中
Infineon
2ED2108S06FXUMA1 2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 ✓ 量产中

规格对比

参数 2ED21834S06JXUMA1 2ED2108S06FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $0.30
Product Type Half-Bridge Gate Driver IC —
Configuration Half-bridge (high-side + low-side) —
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes Yes
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
封装 PG-DSO-14-49 (DSO-14) PG-DSO-8-53 (DSO-8)
引脚数 14 —
安装类型 Surface Mount Surface Mount
工作温度范围 -40 °C to +125 °C —
RoHS 状态 Compliant Compliant
Standard Reel Quantity 3000 —
Driver Configuration — Half-Bridge
Number of Drivers — 1
Gate Type — N-Channel MOSFET, IGBT
输出数量 — 2 (high-side + low-side)
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Undervoltage Lockout (UVLO) — Yes (VCC and VB)
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]
工作温度 — -40 C to +125 C
MSL 等级 — 1

数据手册与资源

浏览全部产品 创建 BOM 获取报价