2ED21834S06JXUMA1 vs 2ED2108S06FXUMA1 Comparison
Detailed side-by-side comparison of 2ED21834S06JXUMA1 by Infineon and 2ED2108S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon
2ED21834S06JXUMA1 ✓ Active
Specification Comparison
| Parameter | 2ED21834S06JXUMA1 | 2ED2108S06FXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Product Type | Half-Bridge Gate Driver IC | — |
| Configuration | Half-bridge (high-side + low-side) | — |
| Maximum Offset Voltage (VBS) | 650 V | — |
| Typical Sink Current | 2.5 A | — |
| Typical Source Current | 2.5 A | — |
| Input Logic | Non-Inverting | — |
| Integrated Bootstrap Diode | Yes | Yes |
| Technology | SOI (Silicon-On-Insulator) high-voltage | — |
| Under-Voltage Lockout (UVLO) | Yes (VCC and VBS) | — |
| Package | PG-DSO-14-49 (DSO-14) | PG-DSO-8-53 (DSO-8) |
| Number of Pins | 14 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -40 °C to +125 °C | — |
| RoHS Status | Compliant | Compliant |
| Standard Reel Quantity | 3000 | — |
| Driver Configuration | — | Half-Bridge |
| Number of Drivers | — | 1 |
| Gate Type | — | N-Channel MOSFET, IGBT |
| Number of Outputs | — | 2 (high-side + low-side) |
| Logic Input | — | Non-Inverting |
| Input Voltage (VCC) | — | 10 V to 20 V |
| High-Side Bootstrap Voltage Rating | — | 650 V |
| Peak Source Current (typ.) | — | 0.29 A |
| Peak Sink Current (typ.) | — | 0.7 A |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB) |
| Propagation Delay (typ.) | — | [DATA_NEEDED: propagation delay ns] |
| Rise / Fall Time (typ.) | — | [DATA_NEEDED: tr/tf ns] |
| Operating Temperature | — | -40 C to +125 C |
| MSL Level | — | 1 |