2EDR7259XXUMA1 vs 1ED3124MC12HXUMA1 对比

详细并排对比 2EDR7259XXUMA1 出自 Infineon 和 1ED3124MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中

规格对比

参数 2EDR7259XXUMA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $1.45
Product Type Isolated Gate Driver IC —
拓扑 Dual-channel, half-bridge independent outputs —
Isolation Technology Magnetic (coreless transformer) coupling Magnetic coupling (coreless transformer)
Number of Channels 2 —
Peak Source Current (typ.) 5 A —
Peak Sink Current (typ.) 9 A —
Isolation Voltage (Vrms) 5700 Vrms —
Transient Withstanding Voltage 8000 Vpk (per Infineon family datasheet) —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typ.) 38 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: ns value] —
UVLO Yes, independent per channel —
Logic Supply (VCC) 3.3 V or 5 V —
工作温度范围 -40 °C to +125 °C —
封装 PG-DSO-14 (narrow body) PG-DSO-8 (DSO-8)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
AEC-Q100 [DATA_NEEDED: automotive grade status] —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
输出数量 — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升时间 — 15 ns
下降时间 — 30 ns
工作温度 — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

数据手册与资源

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