2EDR7259XXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 2EDR7259XXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDR7259XXUMA1
2EDR7259XXUMA1 - 5A/9A Isolated Gate Driver 5700Vrms | Infineon
2EDR7259XXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 2EDR7259XXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $1.45 |
| Product Type | Isolated Gate Driver IC | β |
| Topology | Dual-channel, half-bridge independent outputs | β |
| Isolation Technology | Magnetic (coreless transformer) coupling | Magnetic coupling (coreless transformer) |
| Number of Channels | 2 | β |
| Peak Source Current (typ.) | 5 A | β |
| Peak Sink Current (typ.) | 9 A | β |
| Isolation Voltage (Vrms) | 5700 Vrms | β |
| Transient Withstanding Voltage | 8000 Vpk (per Infineon family datasheet) | β |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns | β |
| Propagation Delay (typ.) | 38 ns | β |
| Channel-to-Channel Delay Match | [DATA_NEEDED: ns value] | β |
| UVLO | Yes, independent per channel | β |
| Logic Supply (VCC) | 3.3 V or 5 V | β |
| Operating Temperature Range | -40 Β°C to +125 Β°C | β |
| Package | PG-DSO-14 (narrow body) | PG-DSO-8 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| AEC-Q100 | [DATA_NEEDED: automotive grade status] | β |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Drivers | β | 1 |
| Number of Outputs | β | 1 |
| Peak Source Current | β | 13.5 A |
| Peak Sink Current | β | 14 A |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |