2N7002L vs MMBF170LT1 Comparison

Detailed side-by-side comparison of 2N7002L by onsemi and MMBF170LT1 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2N7002L MMBF170LT1
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.03 $0.09
Transistor Type N-Channel Enhancement Mode MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) 500 mA (Ta)
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V —
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET DMOS
Mounting Type Surface Mount Surface Mount
Package SOT-23 (SOT-23-3) —
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi onsemi (ON Semiconductor)
RoHS Status [DATA_NEEDED: RoHS status] Compliant (per onsemi product page)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Operating Temperature Range — -55 °C to +150 °C (TJ max per datasheet)
Package / Case — SOT-23-3 (TO-236)
Pin Count — 3
AEC-Q101 Qualified — Yes (per datasheet)
Polarity — N-Channel

Datasheets & Resources

Browse All Products Create BOM Request Quote