IPB019N08N3GATMA1 - 80V 180A 1.9mΩ OptiMOS 3 N-MOSFET | Infineon
料号： IPB019N08N3GATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.92 | $4.92 |
| 10 | $4.21 | $42.10 |
| 100 | $3.65 | $365.00 |
| 500 | $3.18 | $1,590.00 |
| 1,000 | $2.74 | $2,740.00 |
IPB019N08N3GATMA1 概述
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently switch or amplify electrical signals in power electronics. MOSFETs sit within the discrete semiconductor hierarchy: transistor → MOSFET → power MOSFET → power management component. The OptiMOS 3 family specifically targets high-efficiency power conversion in synchronous rectification, DC-DC converter, and motor drive topologies where low conduction and switching losses are critical.
The IPB019N08N3 stands out through its combination of very low RDS(on) of 1.9 mΩ, ultra-low thermal resistance of the D2PAK-7 package, and a 180 A continuous current rating at case temperature. The OptiMOS 3 technology reduces gate charge (Qg = 206 nC) and output capacitance (Coss = 3.84 nF) to minimize switching losses at high frequencies, while the D2PAK-7 package with bottom-side cooling tab provides superior heat dissipation compared to standard D2PAK. The device is driven by standard 10 V gate drive, making it compatible with most gate driver ICs.
Typical applications include high-current synchronous rectification in telecom and server power supplies, solar micro-inverters, electric vehicle (EV) power conversion stages, battery management systems (BMS), motor drives in industrial automation, and DC-DC converter primary-side switches. The 80 V breakdown voltage provides ample headroom for 24 V and 48 V bus systems.
When designing with this MOSFET, ensure that the gate driver can source/sink sufficient peak current (typically 1-2 A) to charge the 206 nC gate charge quickly enough for the target switching frequency. Layout is critical: minimize the high-side/low-side gate-driver loop area to reduce parasitic inductance that can cause voltage overshoot and EMI. Use a sufficient heatsink or copper pour to manage the 300 W dissipation capability.
This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
直接替换替代料： IPB019N08N3GATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IPB019N08N3GATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Junction Temperature, Mounting Type, Lead-Free / RoHS.
快速对比工具——选择替代料号进行并排对比：
IRFB3207ZPBF
✅ 直接替换✓ 有现货
$1.62 / 个
查看数据手册 →IRF3007STRLPBF
✅ 直接替换✓ 有现货
$0.92 / 个
查看数据手册 →IRFB7545PBF
✅ 直接替换✓ 有现货
$0.95 / 个
查看数据手册 →IRF1310NSTRLPBF
✅ 直接替换✓ 有现货
$0.84 / 个
查看数据手册 →IRF4905LPBF
✅ 直接替换✓ 有现货
$0.98 / 个
查看数据手册 →AUIRF7640S2TR
✅ 直接替换✓ 有现货
$1.18 / 个
查看数据手册 →IPB019N08N3GATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | 180 A |
| Power Dissipation (Pd) @ Tc=25°C | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V |
| Drive Voltage (Rds On Max) | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC |
| Input Capacitance (Ciss) | 14.2 nF |
| Output Capacitance (Coss) | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | 3.84 nF |
| 工作温度范围 | -55 °C to +175 °C |
| 封装 | PG-TO263-7 (D2PAK-6, surface mount) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
IPB019N08N3GATMA1 引脚配置
| 引脚 1 | Gate — Gate control input, driven by gate driver |
| 引脚 2 | Drain — Power drain, internally connected to metal tab |
| 引脚 3 | Source — Power source, primary current return |
| 引脚 4 | Source — Source pin (parallel) |
| 引脚 5 | Source — Source pin (parallel) |
| 引脚 6 | Source — Source pin (parallel) |
| 引脚 7 | Source — Source pin (parallel) |
安全工作区 (DC)
典型应用
IPB019N08N3GATMA1 适用于 6 应用s: Telecom/Server Synchronous Rectification, Solar Micro-Inverter Power Stage, Electric Vehicle DC-DC Converter, Industrial Motor Drive H-Bridge, Battery Management System (BMS) Protection, High-Current Hot-Swap/ORing Controller Switch.
Telecom/Server Synchronous Rectification
The IPB019N08N3GATMA1 is a drop-in low-side synchronous rectifier in 48 V-input telecom and server DC-DC converters. Its 1.9 mΩ RDS(on) at 10 V VGS drives conduction losses below 19 W at 100 A load, while the 206 nC Qg keeps switching losses manageable at 100-200 kHz operation. The 80 V Vdss rating comfortably absorbs the 48 V nominal rail plus transient overshoot from leakage inductance, and the D2PAK-7 package handles 300 W dissipation on a standard 1 oz copper PCB.
推荐
Solar Micro-Inverter Power Stage
In solar micro-inverter primary-side switching stages, the IPB019N08N3GATMA1 serves as the high-frequency switching MOSFET, converting 25-60 V DC from photovoltaic panels to grid-tied AC. Its 80 V rating handles open-circuit panel voltage with margin, and the 180 A continuous current rating supports inverter designs up to 3 kW. The OptiMOS 3 technology minimizes reverse-recovery charge, reducing switching losses and improving CEC-weighted efficiency above 96%.
推荐
Electric Vehicle DC-DC Converter
The IPB019N08N3GATMA1 fits the primary-side switch position in 400 V to 12 V or 48 V to 12 V EV auxiliary DC-DC converters. With 80 V Vdss and 180 A capability, it supports 12 V/48 V bus systems derived from the 400 V traction battery through an isolated topology. Its low 1.9 mΩ RDS(on) reduces thermal stress in under-hood environments, while the 175 °C maximum junction temperature tolerates automotive thermal cycling. AEC-Q101 variants exist for full automotive qualification.
推荐
Industrial Motor Drive H-Bridge
In industrial 24 V/48 V brushless DC (BLDC) motor drives, the IPB019N08N3GATMA1 serves as the low-side switch in each phase leg of a 3-phase inverter. The 180 A continuous current rating supports motors up to ~5 kW, while the 80 V breakdown voltage tolerates back-EMF spikes from inductive loads. The D2PAK-7 package mounts to a chassis or PCB copper plane for thermal management. Compared to IGBTs at this voltage, MOSFETs offer faster switching and lower conduction losses at high current.
推荐
Battery Management System (BMS) Protection
The IPB019N08N3GATMA1 acts as the high-current disconnect switch in lithium-ion battery packs, providing overcurrent and short-circuit protection. Its 1.9 mΩ RDS(on) keeps voltage drop below 200 mV at 100 A discharge, preserving battery efficiency. The 80 V Vdss handles 16S Li-ion stacks (nominal 57.6 V, max 67.2 V) with margin. The 175 °C junction temperature withstands thermal events during fault conditions, ensuring safe disconnection.
推荐
High-Current Hot-Swap/ORing Controller Switch
In -48 V telecom hot-swap and redundant ORing applications, the IPB019N08N3GATMA1 provides low-loss current switching. Its 1.9 mΩ RDS(on) drops only 38 mV at 20 A continuous load, minimizing power dissipation in always-on ORing circuits. The 80 V Vdss handles -48 V bus transients (-75 V worst case), and the D2PAK-7 package supports >50 A continuous operation with appropriate PCB copper. The device also functions in active ORing controller circuits replacing Schottky diodes.
推荐
推荐产品汇总
工程参考数据： IPB019N08N3GATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRFB3207ZPBF | IRF3007STRLPBF | IRFB7545PBF | IRF1310NSTRLPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-7 (D2PAK-6) | TO-263AB (D2PAK) - same | TO-263AB (D2PAK) - same | TO-263AB (D2PAK) - same | TO-263AB (D2PAK) - same |
| Vdss (V) | 80 | 75 | 75 | 60 | 100 |
| RDS(on) Max @ VGS=10V (mΩ) | 1.9 | 3.2 | 3.0 | 3.3 | 3.6 |
| Continuous Drain Current @ Tc=25°C (A) | 180 | 180 | 200 | 160 | 130 |
| Total Gate Charge Qg (nC) | 206 | 300 | 290 | 260 | 250 |
| Gate Threshold Vgs(th) (V) | 3.5 | 3.0 | 3.0 | 2.7 | 2.7 |
| Technology Generation | OptiMOS 3 | HEXFET (older gen) | HEXFET (older gen) | HEXFET (older gen) | HEXFET (older gen) |
关键差异点
- OptiMOS 3 technology with industry-leading FOM （对比 IRFB3207ZPBF (HEXFET))
- 80 V Vdss with low RDS(on) （对比 IRFB7545PBF)
- 180 A continuous drain current at Tc=25°C （对比 IRF1310NSTRLPBF)
设计说明
The IPB019N08N3GATMA1 can dissipate up to 300 W at Tc=25 °C, but real-world designs rarely reach this without substantial cooling. Estimated: at VDS=40 V, ID=100 A, and switching frequency 100 kHz with 50% duty cycle, total power dissipation is approximately 60-80 W (conduction plus switching). Use a D2PAK heat sink with thermal resistance below 1 °C/W or mount on at least 4 sq-in of 2 oz copper on the PCB to keep junction temperature below 125 °C. The D2PAK-7 package with multiple Source pins reduces parasitic source inductance and improves current spreading.
Minimize the high-side and low-side gate-driver loop area to reduce parasitic inductance, which causes VDS voltage overshoot and EMI. Place the gate driver within 5 mm of the MOSFET gate pin, and use a 4-layer PCB with a dedicated ground plane under the driver. The Source pins (3-7) should all be soldered to a wide copper pour to maximize heat spreading and minimize source inductance. Decouple the gate driver supply with a 1 µF ceramic capacitor placed close to the driver VCC pin.
Do not exceed the 80 V Vdss rating, including transient overshoot from leakage inductance. Add a snubber (RC or RCD) across the MOSFET if the switching waveform shows overshoot above 64 V (80% of Vdss max). Do not operate the gate below the 3.5 V threshold or above the 20 V Vgs maximum — 10 V nominal with 12 V absolute max is standard for this device. Always check the SOA curve at your operating point; this 80 V part at VDS=40 V and ID=180 A is well within DC SOA, but pulsed operation at lower duty cycles allows higher peak currents.
合规信息
RoHS compliant per Infineon product page. The standard IPB019N08N3GATMA1 is not AEC-Q100 qualified; for automotive applications, consider the AEC-Q101 qualified AUIRF7640S2TR as an alternative. Halogen-free status not explicitly stated in provided data.
