BSC039N06NSATMA1 vs IPB038N12N3GATMA1 对比
详细并排对比 BSC039N06NSATMA1 出自 Infineon 和 IPB038N12N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC039N06NSATMA1 | IPB038N12N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.46 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA | 19 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | — |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Power Dissipation at TA (PD) | 2.5 W | — |
| Power Dissipation at TC (PD) | 69 W | — |
| 工作结温 | -55C to +150C | — |
| 封装 | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 8 | — |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Technology | OptiMOS 5 (TrenchFET-style) | OptiMOS trench MOSFET |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Product Family | — | OptiMOS 120V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) @ Tc | — | 120 A |
| Power Dissipation (Pd) @ Tc | — | 300 W |
| On-State Resistance (Rds(on)) | — | 3.8 mOhm (typical) |
| 封装 / 外壳 | — | PG-TO263-3 (D2PAK) |
| Gate Drive | — | Logic-level compatible |
| 工作温度范围 | — | -55C to +175C (junction) |
| Standard Package Quantity | — | 1000 (Tape & Reel) |
| Avalanche Rated | — | Yes |