BSC076N04NDATMA1 vs BSC074N15NS5ATMA1 对比

详细并排对比 BSC076N04NDATMA1 出自 Infineon 和 BSC074N15NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ 量产中
Infineon
BSC074N15NS5ATMA1 BSC074N15NS5ATMA1 - 150V 7.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC074N15NS5ATMA1 - 150V 7.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC074N15NS5ATMA1 ✓ 量产中

规格对比

参数 BSC076N04NDATMA1 BSC074N15NS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $1.45
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
Configuration Dual N-Channel (independent MOSFETs) —
Drain-Source Voltage (VDS) max 40 V —
Continuous Drain Current (ID) 20 A (Tc) —
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) —
On-Resistance RDS(on) max 7.6 mOhm —
Power Dissipation (Ta) 2.3 W —
Power Dissipation (Tc) 65 W —
Technology Trench MOSFET (OptiMOS 3) OptiMOS™ 5 trench
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) —
工作结温 -55 C to +175 C —
封装 / 外壳 PG-TDSON-8-4 (SuperSO8, 5x6 mm) —
安装类型 Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) —
FET Type 2x N-Channel MOSFET array —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TC=25°C — 114 A
Power Dissition (PD) at TC=25°C — 214 W
On-Resistance RDS(on) max @ VGS=10V — 7.4 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
封装 — SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks
工作温度范围 — [DATA_NEEDED: TJ min/max]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typ]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
RoHS 状态 — Compliant
MSL 等级 — [DATA_NEEDED: MSL rating]
Body Diode — Integrated

数据手册与资源

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