BSC076N04NDATMA1 vs BSC074N15NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC076N04NDATMA1 by Infineon and BSC074N15NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC076N04NDATMA1 | BSC074N15NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel (independent MOSFETs) | — |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | — |
| On-Resistance RDS(on) max | 7.6 mOhm | — |
| Power Dissipation (Ta) | 2.3 W | — |
| Power Dissipation (Tc) | 65 W | — |
| Technology | Trench MOSFET (OptiMOS 3) | OptiMOS™ 5 trench |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| Operating Junction Temperature | -55 C to +175 C | — |
| Package / Case | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25°C | — | 114 A |
| Power Dissition (PD) at TC=25°C | — | 214 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 7.4 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Package | — | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks |
| Operating Temperature Range | — | [DATA_NEEDED: TJ min/max] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| RoHS Status | — | Compliant |
| MSL Level | — | [DATA_NEEDED: MSL rating] |
| Body Diode | — | Integrated |